Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Heterojunction type photoelectric detector and manufacturing method thereof

A photodetector and heterojunction technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of limited application of photodetectors, slow response speed, etc., and achieve fast gain, high responsivity and gain, and high conductance. rate effect

Inactive Publication Date: 2012-07-25
HEFEI UNIV OF TECH
View PDF4 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The slow response speed will severely limit the application of photodetectors in optoelectronic device integrated circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heterojunction type photoelectric detector and manufacturing method thereof
  • Heterojunction type photoelectric detector and manufacturing method thereof
  • Heterojunction type photoelectric detector and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] In this embodiment, the P-type zinc telluride nanoribbon and the N-type graphene heterojunction photodetector have the following structure:

[0036] see figure 1 , on the surface of the silicon substrate 1 covered with the silicon dioxide layer 2, there are tiled zinc telluride nanobelts 4 scattered, and the two ends of the zinc telluride nanobelts 4 are respectively provided with 100 nanometer thick gold electrodes 3 as Output one pole, the gold electrode 3 is in ohmic contact with the zinc telluride nanoribbon 4; the zinc telluride nanoribbon 4 is overlapped with graphene 5, and the graphene 5 is located on the two gold electrodes 3 and isolated from the gold electrode 3; the graphene 5 is provided with a 100 nanometer thick gold electrode 6 as another output electrode, the gold electrode 6 is in ohmic contact with the graphene 5 and is in contact with the telluride The zinc nanobelt 4 is isolated from the gold electrode 3;

[0037] Wherein the zinc telluride nanobe...

Embodiment 2

[0042] Such as figure 2 As shown, the P-type zinc telluride nanoribbon and N-type graphene heterojunction photodetector in this embodiment have the following structure:

[0043] Graphene 9 is tiled on the surface of a silicon substrate 7 covered with a silicon dioxide layer 8, and a 30-nanometer thick insulating layer 10 is arranged on the graphene 9, and zinc telluride nanometers are dispersed on the surface of the insulating layer 10. Belt 11 and a part of the zinc telluride nanobelt 11 is in contact with graphene 9; a 100 nanometer thick gold electrode 12 is provided on the insulating layer 10, and the gold electrode 12 is in ohmic contact with the zinc telluride nanobelt 11; On the graphene 9, a 100 nanometer thick gold electrode 13 is provided, and the gold electrode 13 is isolated from the insulating layer 10, the gold electrode 12 and the zinc telluride nanoribbon 11;

[0044] The zinc telluride nanobelt 11 is a P-type zinc telluride nanobelt; the graphene 9 is an N-t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a heterojunction type photoelectric detector and a manufacturing method of the heterojunction type photoelectric detector. The heterojunction type photoelectric detector is constructed by a p-type zinc telluride nano belt and n-type graphene. The photoelectric detector is extremely sensitive to visible light, is high in responsibility and gains and quick in response, thereby providing a good foundation for the application and the integration of nano materials in a photoelectric device.

Description

technical field [0001] The invention relates to a P-type cadmium telluride nanobelt and N-type graphene heterojunction photodetector and a preparation method thereof. Background technique [0002] Photodetector refers to a physical phenomenon in which the conductivity of the irradiated material is changed by radiation. Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc. [0003] Photodetectors convert light signals into electrical signals. Depending on the way the device responds to radiation or the mechanism of the device's work, photodetectors can be divided into two categories: one is photon detectors; the other is thermal detectors. According to the device structure, it can be divided ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/028H01L31/0352H01L31/109H01L31/18
CPCY02P70/50
Inventor 蒋阳吴翟吕鹏张玉刚蓝新正罗林保
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com