Doping method for p-type zinc telluride single crystal thin-film material
A single crystal thin film, zinc telluride technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as unevenness, complicated process control, and difficult precise control of doping concentration, so as to inhibit the volatilization of tellurium element , less damage, easy to implement effect
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[0016] see figure 1 with figure 2 As shown, the present invention provides a method for doping a p-type zinc telluride single crystal thin film material, comprising the steps of:
[0017] Step 1: Take a single crystal substrate 10, and the material of the single crystal substrate 10 is ZnTe, GaSb, GaAs or Si wafer. For example: choose the ready-to-use 2-inch semi-insulating GaAs (001) wafer as the substrate material.
[0018] Step 2: On the single crystal substrate 10, epitaxially grow a single crystal thin film 11, the single crystal thin film 11 is not intentionally doped, and its thickness is greater than 100nm, and the epitaxial growth single crystal thin film 11 adopts molecular beam epitaxy or metal organic chemical vapor deposition. For example: use molecular beam epitaxy growth equipment to grow zinc telluride single crystal thin film materials heterogeneously. In the experiment, Zn and Te with a purity of 6N (≥99.9999%) were selected as the molecular beam source,...
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