Antimony (Sb)-tellurium (Te)-titanium (Ti) phase-transition storage material and titanium-antimony telluride (Ti-Sb2Te3) phase-transition storage material

A ti-sb2te3, sb-te-ti technology, applied in the field of phase change materials and their preparation, can solve the problem that phase change materials cannot be applied to phase change memory, etc., and achieves enhanced thermal stability and data retention, uniform distribution, The effect of enhanced thermal stability

Active Publication Date: 2012-07-18
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the absence of doping, Sb 2 Te 3 Phase change materials cannot be used in phase change memory

Method used

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  • Antimony (Sb)-tellurium (Te)-titanium (Ti) phase-transition storage material and titanium-antimony telluride (Ti-Sb2Te3) phase-transition storage material
  • Antimony (Sb)-tellurium (Te)-titanium (Ti) phase-transition storage material and titanium-antimony telluride (Ti-Sb2Te3) phase-transition storage material
  • Antimony (Sb)-tellurium (Te)-titanium (Ti) phase-transition storage material and titanium-antimony telluride (Ti-Sb2Te3) phase-transition storage material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Preparation of Sb 60 Te 30 Ti 10 Nanocomposite phase change materials:

[0056] The nanocomposite phase change material in this embodiment adopts Sb 60 Te 30 Co-sputtering alloy target and Ti target. The specific preparation conditions are: during the co-sputtering process, Ar gas with a purity of 99.999% and Sb 60 Te 30 The target adopts radio frequency power supply, the Ti target adopts direct current power supply, the adopted radio frequency power supply power is 25W, and the adopted direct current power supply power is 15W. Sb 2 After the Te target glows, turn on the Ti target power. The co-sputtering time is 20 minutes, and the film thickness is about 170nm.

[0057] The Sb obtained in this embodiment 60 Te 30 Ti 10 Nanocomposite phase change materials obtained through testing Figure 1-3 :

[0058] figure 1 Sb with different heating rates 60 Te 30 Ti 10 The graph of the relationship between sheet resistance and temperature. The heating rate used...

Embodiment 2

[0064] Preparation of Sb 72 Te 18 Ti 10 Nanocomposite phase change materials:

[0065] The nanocomposite phase change material in this embodiment adopts Sb 72 Te 18 Co-sputtering alloy target and Ti target. The specific preparation conditions are: during the co-sputtering process, Ar gas with a purity of 99.999% and Sb 72 Te 18 The target adopts radio frequency power supply, the Ti target adopts direct current power supply, the adopted radio frequency power supply power is 25W, and the adopted direct current power supply power is 15W. Sb 72 Te 18 After the target glows, turn on the Ti target power. The co-sputtering time is 30 minutes, and the film thickness is about 200nm.

[0066] The Sb obtained in this embodiment 72 Te 18 Ti 10 Nanocomposite phase change materials have been tested and known:

[0067] Sb obtained from 72 Te 18 Ti 10 Sb at different heating rates of nanocomposite phase change materials 80 Te 10 Ti 10 The graph of the relationship between ...

Embodiment 3

[0072] Preparation of Sb 50 Te 30 Ti 20 Nanocomposite phase change materials:

[0073]The nanocomposite phase change material in this embodiment adopts Sb 50 Te 30 Co-sputtering alloy target and Ti target. The specific preparation conditions are: during the co-sputtering process, Ar gas with a purity of 99.999% and Sb 50 Te 30 The target adopts radio frequency power supply, the Ti target adopts direct current power supply, the adopted radio frequency power supply power is 25W, and the adopted direct current power supply power is 15W. Sb 2 After the Te target glows, turn on the Ti target power. The co-sputtering time is 50 minutes, and the film thickness is about 250nm.

[0074] The Sb obtained in this embodiment 50 Te 30 Ti 20 Nanocomposite phase change materials have been tested and known:

[0075] Sb obtained from 50 Te 30 Ti 20 Sb at different heating rates of nanocomposite phase change materials 50 Te 30 Ti 20 The graph of the relationship between sheet ...

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Abstract

The invention relates to an antimony (Sb)-tellurium (Te)-titanium (Ti) phase-transition film material capable of being used for a phase-transition memory and a preparation method thereof. The novel Sb-Te-Ti phase-transition storage material is formed by doping Ti on the basis of a Sb-Te phase-transition material, the doped Ti is bonded with both the Sb and the Te, a chemical formula of the novel phase-transition material is SbxTeyTi100-x-y, wherein x is more than zero and less than 80, and y is more than zero and less than 100 minus x. When the novel phase-transition storage material is a Ti-Sb2Te3 phase-transition storage material, Ti atoms substitute the positions of Sb atoms, and no phase is split. The present Sb-Te phase-transition material crystallization process is led by the grain growth, so that the phase transition rate is fast, but the maintaining force cannot meet the industrial requirements. The crystallization temperature of the novel Sb-Te-Ti phase-transition storage material is greatly improved, the maintaining force is enhanced, and the thermal stability is enhanced; at the same time, amorphous resistance is reduced, and the crystalline resistance is increased; and the novel Sb-Te-Ti phase-transition storage material can be widely applied to the phase-transition memory.

Description

technical field [0001] The invention relates to a phase-change material and a preparation method thereof, in particular to a Sb-Te-Ti phase-change thin film material which can be used in a phase-change memory. Background technique [0002] The principle of phase change memory (PCRAM) is to use chalcogenide as the storage medium, and use electric energy (heat) to convert the material between crystalline state (low resistance) and amorphous state (high resistance) to realize information writing and erasing , The readout of information is achieved by measuring the size of the resistance and comparing its high resistance "1" or low resistance "0". [0003] The crystallization process of Sb-Te series phase change materials is dominated by grain growth, so the phase change rate is fast, and the melting point is higher than that of GST (Ge 2 Sb 2 Te 5 ) is low, so the required power consumption is low. However, Sb-Te series phase change materials also have disadvantages such as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH01L45/144H01L45/06C23C14/3414G11C13/0004H01L45/148H01L45/1625H10N70/231H10N70/8828H10N70/884H10N70/026
Inventor 朱敏吴良才宋志棠饶峰彭程周夕淋任堃封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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