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Preparation method for transition metal doped antimony telluride alloy target material

A technology of antimony telluride alloy and transition metal, which is applied in the field of preparation of antimony telluride alloy target, which can solve the problems of difficult control of target material composition, uneven distribution of elements, and easy deformation of target material, so as to achieve good product controllability , uniform element distribution and high density

Inactive Publication Date: 2019-01-18
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is costly and complicated, and the composition of the target is not easy to control, and it is easy to cause problems such as uneven distribution of elements.
In addition, the target material prepared by melting casting method is easy to deform and crack

Method used

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  • Preparation method for transition metal doped antimony telluride alloy target material
  • Preparation method for transition metal doped antimony telluride alloy target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Preparation of Sb 2 Te 3 target

[0026] 1) Add about 54g Sb 2 Te 3 The powder is added to a graphite mold with an inner diameter of 50mm coated with boron nitride;

[0027] 2) Put the powder and mold in step 1) into the hot-press furnace, seal the furnace body, vacuumize, and keep the low pressure in the furnace below 0.01Pa;

[0028] 3) At room temperature, apply a pressure of about 28 MPa to the mold, and completely release the pressure after holding the pressure for 5 minutes;

[0029] 4) Raise the temperature in the furnace to 200°C, and under the condition of 200°C, apply a pressure of 40MPa to the mold and hold the pressure for 5 minutes before completely releasing the pressure;

[0030] 5) Raise the temperature in the furnace to 400°C at a rate of 10°C / min, and at 400°C, apply a pressure of 40MPa to the mold and keep the pressure for 5 minutes;

[0031] 6) After the pressure holding process in step 5), cool naturally to room temperature, and release the pr...

Embodiment 2

[0034] Preparation Y 0.25 Sb 1.75 Te 3 target

[0035] 1) Add about 54g Y 0.25 Sb 1.75 Te 3 The powder is added to a graphite mold with an inner diameter of 50mm coated with boron nitride;

[0036] 2) Put the powder and mold in step 1) into the hot-press furnace, seal the furnace body, vacuumize, and keep the low pressure in the furnace below 0.01Pa;

[0037] 3) At room temperature, apply a pressure of about 28 MPa to the mold, and completely release the pressure after holding the pressure for 5 minutes;

[0038] 4) Raise the temperature in the furnace to 200°C, and under the condition of 200°C, apply a pressure of 40MPa to the mold and hold the pressure for 5 minutes before completely releasing the pressure;

[0039] 5) Raise the temperature in the furnace to 400°C at a rate of 10°C / min, and at 400°C, apply a pressure of 40MPa to the mold and keep the pressure for 5 minutes;

[0040] 6) After the pressure holding process in step 5), cool naturally to room temperature,...

Embodiment 3

[0043] Preparation of Sc 0.25 Sb 1.75 Te 3 target

[0044] 1) Add about 54g Sc 0.25 Sb 1.75 Te 3 The powder is added to a graphite mold with an inner diameter of 50mm coated with boron nitride;

[0045] 2) Put the powder and mold in step 1) into the hot-press furnace, seal the furnace body, vacuumize, and keep the low pressure in the furnace below 0.01Pa;

[0046] 3) At room temperature, apply a pressure of about 28 MPa to the mold, and completely release the pressure after holding the pressure for 5 minutes;

[0047] 4) Raise the temperature in the furnace to 200°C, and under the condition of 200°C, apply a pressure of 40MPa to the mold and hold the pressure for 5 minutes before completely releasing the pressure;

[0048] 5) Raise the temperature in the furnace to 400°C at a rate of 10°C / min, and at 400°C, apply a pressure of 40MPa to the mold and keep the pressure for 5 minutes;

[0049] 6) After the pressure holding process in step 5), cool naturally to room tempera...

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Abstract

The invention provides a preparation method for a transition metal doped antimony telluride alloy target material. Transition metals comprise Sc, Y, Ti, Cr, Hg, Zn and the like. The preparation methodfor the alloy target material comprises the steps that 1, a proper amount of alloy powder is put into a graphite die, and then the graphite die with the alloy powder is sealed in a vacuum hot press furnace; 2, 70% of target pressure is applied at the room temperature, the pressure is maintained for about 5 minutes, and then the pressure is slowly relieved; 3, the temperature is adjusted to be 200DEG C, then the target pressure is applied, the pressure is maintained for about 5 minutes, and then the pressure is slowly relieved; 4, after heating is conducted to raise the temperature to targettemperature, the target pressure is applied again, and the pressure is maintained for about 5 minutes; 5, after pressure maintaining is finished, natural cooling is conducted, every when the temperature is reduced by 20%, the target pressure is relieved by 20%, and after the temperature is lowered to the room temperature, the target material is obtained. The preparation method has the advantages of being low in cost, simple in operation, environmentally friendly and the like, the target material prepared by using the method is high in purity and high in density, and elements in the target material are uniformly distributed.

Description

technical field [0001] The invention belongs to a material processing technology, and relates to a preparation method of a transition metal-doped antimony telluride alloy target. Background technique [0002] Since the 1990s, the simultaneous development of sputtering targets and sputtering technology has greatly met the development needs of various new electronic components. The rapid growth of the amount of information and data puts forward higher requirements for the memory integration process and the storage material itself. At present, the thin film materials used in the field of information storage are mostly prepared by magnetron sputtering, which requires the preparation of high-quality sputtering targets. [0003] In the field of phase change storage, the traditional preparation method of transition metal doped antimony telluride alloy target is melting and casting method. The smelting and casting method mainly uses bulk metal or bulk metal and bulk nonmetal as ra...

Claims

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Application Information

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IPC IPC(8): B22F3/14B22F3/10C22C29/00C23C14/34
CPCB22F3/10B22F3/14C22C29/005C23C14/3414
Inventor 孙志梅李开旗刘宾周健
Owner BEIHANG UNIV
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