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Solid state thermoelectric power converter

a thermoelectric power converter and solid-state technology, applied in the direction of crystal growth process, polycrystalline material growth, chemistry apparatus and processes, etc., to achieve the effect of increasing the surface area available for cooling and improving the efficiency of power conversion

Inactive Publication Date: 2012-04-19
SCHROEDER JON MURRAY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0020]It is a further purpose of this invention to provide a high efficiency of transmission of energy contained in a thermoelectric torus by an improved make-before-break switching control system utilizing special physical connections to the ring-shaped thermoelectric generator device.
[0024]It is a further purpose of this invention to provide a means to energize the control board and thereby replace the need for a battery in the device.
[0025]It is a further purpose of this invention to improve the efficiency of power conversion by splitting the ends of cold fins and thereby increasing the surface area available for cooling.

Problems solved by technology

Thermoelectric generator devices have been used for many years for specific applications where the simplicity of design warrants their use despite low energy conversion efficiency.

Method used

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Examples

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Effect test

example 1

Reduced Barriers n-Type Semiconductor Composition

[0130]

ElementRangePreferred AmountSelenium 5%-12%10%Bismuth40%-60%45%Telluriumremainder to 100%45%

This n-type selenium-bismuth-telluride-based semiconductor composition represents a formula [Bi2Te3]0.35 [Bi2Se3]0.65 approximating a ratio of one part dibismuth tritelluride and two parts dibismuthtriselenide. This product appears to be crystalline.

example 2

Reduced Barriers p-Type Semiconductor Composition

[0131]

ElementRangePreferred AmountAntimony28%-32%30%Bismuth 8%-12%10%Telluriumremainder to 100%60%

[0132]This p-type antimony-bismuth-telluride-based semiconductor composition represents a formula [Bi2Te3]0.35 [Sb2Te3]0.65 or about one part dibismuthtritelluride and 2 parts diantimonytritelluride. Diantimonytritelluride structural form is a glass. The structure of dibismuth-tetraantimony-nonatelluride as produced by the method described herein appears to be crystalline.

[0133]Copper and some other elements greatly degrade performance of these semiconductors; therefore high purity elements are needed. Each chemical element should be at least 99.9% pure and preferably 99.999% pure.

[0134]Semiconductors are protected from infiltration of copper atoms and components of solder by first coating the wafer edges with a non-conductive high temperature-melting ink, brand named “mark-tex” high temp 44 manufactured by DYKEM, preferably color coded p...

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Abstract

High efficiency conversion of heat energy to electrical energy is achieved using a ring of metallic components and anodically sliced, reduced barriers, high purity n-type and p-type semiconductor wafers. Energy produced by heating one set of fins and cooling another set is extracted from a ring of bismuth telluride based n-type wafers and antimony telluride based p-type wafers using make-before-break control of MOSfet switch banks. Standard AC frequencies and DC output result from rectification of make-before-break high frequency switched very high currents in the ring and a DC to AC converter. Solar energy stored in porcelain fragments extends the time that solar energy can be used as the heat source for the thermoelectric generator device.

Description

RELATED APPLICATIONS[0001]This application is a division of U.S. patent application Ser. No. 11 / 259,922 that is a continuation-in-part of pending U.S. patent application Ser. No. 10 / 154,757, filed May 23, 2002, entitled “Torus Semiconductor Thermoelectric Device” published Nov. 27, 2003.TECHNICAL FIELD[0002]This invention relates to a circular array of semiconductor and conductive elements that comprise a high efficiency thermoelectric generator device. Energy generated by a temperature differential between hot and cold fins of the thermoelectric generator device is more efficiently converted to electrical energy by a combination of both high efficiency semiconductor elements and a high frequency direct current to direct current switching component. When combined with an H-bridge the combination produces alternating current output of various standard voltages and frequencies. Improved cooling efficiency is obtained by increasing the surface area of the cold fins. This is accomplishe...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C30B11/02
CPCH01L35/30H10N10/13
Inventor SCHROEDER, JON MURRAYHIRSCH, GERALD PHILLIP
Owner SCHROEDER JON MURRAY
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