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Or gate based on magnetic Skyrmion and control method thereof

A technology of magnetic skyrmions and magnetic layers, applied in the direction of logic circuits with logic functions, etc., can solve the problems of low stability, inability to meet information storage requirements, and high power consumption

Active Publication Date: 2017-11-07
THE CHINESE UNIV OF HONG KONG SHENZHEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existing AND gate adopts the traditional CMOS structure, which is large in size, high in power consumption, and low in stability. Obviously, it cannot meet people's growing demand for information storage.

Method used

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  • Or gate based on magnetic Skyrmion and control method thereof
  • Or gate based on magnetic Skyrmion and control method thereof
  • Or gate based on magnetic Skyrmion and control method thereof

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Embodiment Construction

[0027] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0029] figur...

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Abstract

The invention relates to an or gate based on magnetic Skyrmion and a control method thereof. The or gate comprises a magnetic nano-track, wherein the magnetic nano-track comprises a magnetic layer and a strong spin track coupling layer which are in mutual contact connection, and the magnetic layer comprises a first input end, a second input end, a Y-shaped magnetic rail and an output end. The Y-shaped magnetic rail comprises a first magnetic track, a second magnetic track, a third magnetic track and a fourth magnetic track. The magnetic Skyrmion enters the Y-shaped magnetic rail from the first input end and / or the second input end, then is changed into a magnetic domain wall pair, passes through the Y-shaped magnetic rail, and then is restored into the new magnetic Skyrmion. The new magnetic Skyrmion and enters the output end. The narrow magnetic rail width in the Y-shaped magnetic rail is smaller than the diameter of the magnetic Skyrmion. The magnetic rail width of the third magnetic rail is greater than the diameter of the magnetic Skyrmion. Reversible conversion can be realized between the magnetic Skyrmion and the magnetic domain wall pair. The or gate formed through movement of the magnetic Skyrmion in the magnetic nano-track is characterized by small size, low power consumption and high stability.

Description

technical field [0001] The invention relates to the technical field of AND gate manufacturing, in particular to a magnetic skyrmion-based AND gate and a control method thereof. Background technique [0002] The rapid development of information technology has not only improved the quality of life of human beings, but also put forward the requirements for the rapid development of information storage technology in the direction of high density, high speed and low energy consumption. The existing AND gate adopts the traditional CMOS structure, which is large in size, high in power consumption, and low in stability. Obviously, it can no longer meet people's growing demand for information storage. Contents of the invention [0003] Based on this, it is necessary to provide an AND gate with small size, low power consumption and high stability. [0004] A magnetic skyrmion-based AND gate, comprising a magnetic nano-track, the magnetic nano-track includes a magnetic layer and a st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/20
CPCH03K19/20
Inventor 张溪超江泽雅彦周艳
Owner THE CHINESE UNIV OF HONG KONG SHENZHEN
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