136 results about "Electron excitation" patented technology

A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.

The invention relates to a crystal silicon surface femtosecond laser selective ablation method based on electron dynamic control, and belongs to the technical field of femtosecond laser application. The crystal silicon surface femtosecond laser selective ablation method based on the electron dynamic control enables laser polarization parameters and crystal lattice properties of crystal silicon materials to be integrated, through the operation that femtosecond laser rays or the included angel of elliptic polarization and monocrystal silicon is adjusted effectively, the selective induction generation of crystal silicon surface periodical ripple micro nano structures is controlled by regulating and controlling material surface instant electron excitation dynamic states, and the induction generation of the crystal silicon surface periodical ripple micro nano structures can be achieved effectively and accurately according to preliminary design. According to the crystal silicon face femtosecond laser selective ablation method based on the electron dynamic control, selective ablation control is carried out on the silicon surface periodic ripple nano structures with diamond lattice structures from the aspect of static laser irradiation and the aspect of laser direct writing, the processing accuracy and the processing efficiency of the surface processing of the silicon surface periodic ripple nano structures are improved greatly, and the application value of the method on the aspects such as information storage is high.

The present invention relates to Luminescent nanoparticles comprising (a) a core made from a luminescent metal salt selected from phosphates, sulfates or fluorides, being surrounded by (b) a shell made from a metal salt or oxide capable of preventing or reducing energy transfer from the core after its electronic excitation to the surface of the nanoparticle, e.g. a shell made from a non-luminescent metal salt or oxide, which are characterized by higher quantum yields and can be used in various fields including light generation and security marking.

Systems and methods for hyper-resolution beyond the diffraction limit of optical microscopes for applications in spectroscopy, absorption and lithographic photochemical patterning are described. These systems are based on interference of a pump pulse and a Stokes laser pulse which interfere to localize the population of an excited vibrational state in an area that is smaller than the scanning resolution of the microscope. Another (interfering) Stokes pulse has an annular shape at focus and destructively interferes with the the Stokes laser pulse. This destructive interference causes narrowing of the population distribution of the vibrational excited state well below the diffraction limit, which in turn localizes the population of the central electronic excited state by a separate actinic laser pulse having a lower energy than the ground state excitation energy of the molecule.A stepped photolithography system uses two photomasks to produce photoresist images capable of printing features smaller than 10 nm.

An optoelectronic apparatus is disclosed. In an embodiment, the apparatus includes at least one wavelength conversion region which includes at least one dual emitter as wavelength conversion material, wherein the wavelength conversion region converts primary radiation at least in part into secondary radiation, and wherein the dual emitter includes a first electronic base state and a second electronic base state, together with a first electronically excited state and a second electronically excited state which may be reached from the first electronically excited state. The dual emitter further includes emission proceeding from the second electronically excited state into the second base state.