43results about How to "In situ doping" patented technology

The invention discloses a bifunctional oxygen electrode catalyst and a preparation method of N and S co-doped porous carbon-coated carbon nanotubes, which belong to the field of energy materials and electrochemical technology. Firstly, the polysulfide precursor is dispersed in a solvent and then transferred into a reaction vessel, and reacted at 50-300° C. to obtain a polysulfide precursor material. Secondly, the precursor of N, S co-doped porous carbon-coated CNT catalyst was prepared. Finally, the resulting NSC‑CNT‑P x The material is placed in a reaction furnace, and the temperature is raised to 600-1200° C. for heat treatment to obtain a N, S co-doped porous carbon-coated CNT catalyst. The catalyst prepared by the invention has a large number of pores and a high specific surface area, which is beneficial to improving the ORR / OER catalytic activity of the material, has a simple preparation process, is green and pollution-free, is easy to scale up production, and is beneficial to large-scale application.

The invention provides a silicon-based composite negative electrode material for a lithium ion battery and a preparation method thereof. The silicon-based composite negative electrode material is composed of silicon, silicon oxide, doped metal and carbon material, wherein silicon and doped metal are dispersed in silicon In the substrate formed by oxides, the carbon material is evenly coated on the surface of the material particles, and the negative electrode material is an in-situ nanoscale bulk phase doped metal; the doping metal is selected from the fourth and fifth period transition metal elements and / or the first One or more of the four or five main group metal elements; the total mass of the silicon-based composite negative electrode material is calculated as 100%, the mass of the doped metal accounts for 3-12%, and the mass of the carbon material accounts for 1-10% . Doping metal in silicon oxide can release a part of lithium in the buffer layer through the reverse conversion reaction, and inhibit the agglomeration and growth of the silicon crystal region during the cycle, and improve the first Coulombic efficiency, rate and cycle performance of the negative electrode material.

The invention relates to a semiconductor device preparing method. The method comprises the following steps: a semiconductor substrate is provided, wherein the semiconductor substrate at least includes a gate structure; and grooves are formed in two sides of the gate and a SiGeB layer is grown in the grooves through epitaxial growth. The method is characterized in that B is doped in an in-situ manner while performing the epitaxial growth of the SiGe layer, and the epitaxial growth comprises two stages: the first stage is to increase the concentration of B in the SiGe layer to make the concentration of B in the SiGe layer reaches the peak concentration; and the second stage is to reduce the concentration of B in the SiGe layer so as to eliminate the short-channel effect. Through the method of the invention, not only a more flat doping tail contour can be acquired after the B doping process is performed so as to reduce the junction leakage phenomenon, and the method can skip the separate ion implantation process so as to make the stress in the channel region maintained; and but also the method can be used to make the doping concentration of B at channels is low so as to eliminate the short-channel effect to make prepared devices have good performances.