43results about How to "In situ doping" patented technology

The invention discloses a bifunctional oxygen electrode catalyst and a preparation method of N and S co-doped porous carbon-coated carbon nanotubes, which belong to the field of energy materials and electrochemical technology. Firstly, the polysulfide precursor is dispersed in a solvent and then transferred into a reaction vessel, and reacted at 50-300° C. to obtain a polysulfide precursor material. Secondly, the precursor of N, S co-doped porous carbon-coated CNT catalyst was prepared. Finally, the resulting NSC‑CNT‑P x The material is placed in a reaction furnace, and the temperature is raised to 600-1200° C. for heat treatment to obtain a N, S co-doped porous carbon-coated CNT catalyst. The catalyst prepared by the invention has a large number of pores and a high specific surface area, which is beneficial to improving the ORR / OER catalytic activity of the material, has a simple preparation process, is green and pollution-free, is easy to scale up production, and is beneficial to large-scale application.

The invention relates to a preparation method for a rare earth element-doped titanium dioxide nano material. The method comprises the steps of dissolving urea and rare earth element nitrate in absolute ethyl alcohol; adding liquid titanium source into the above solution to form a homogeneous solution; adding deionized water with stirring to form a transparent gel; performing hydro-thermal treatment on the above gel; washing, filtering and drying to obtain the rare earth element-doped titanium dioxide nano material. An object of doping titanium dioxide by using the rare earth element is realized through automatic regulation and control of pH value of a reaction system by slow decomposition of urea in the hydrothermal process. The preparation method is simple in process and flow, has wide parameter adjustable range, strong repeatability and low cost, and can be used for preparing different rare earth element-doped titanium dioxide nano materials or a plurality of the rare earth elements co-doped titanium dioxide nano material.

The invention relates to multi-atom co-doped porous carbon nanosheet electrode material and a preparation method and an application thereof. Animal bone, skin and shell and other waste rich in protein act as precursors, the proteins of the precursors are extracted by using aqueous alkali and then the obtained mixed solution is dried and then carbonized under the temperature of 500-1200 DEG C, and finally the electrode material is obtained after washing. The material has the nanosheet structure and also has the nitrogen, oxygen and sulfur co-doped characteristics; and the material has high volume specific capacitance and mass specific capacitance and great multiplying power performance and cyclic stabilization performance when the material is used as the supercapacitor electrode material.

The invention discloses a method for preparing nitrogen-doped porous carbon for supercapacitors by using a metal-organic framework compound, which belongs to the field of material preparation. The specific preparation method is as follows: first, the nano-CaCO 3 Disperse @PDA particles into methanol, then add a certain mass of PVP and zinc nitrate to configure solution A. Secondly, dissolve a certain amount of 2-methylimidazole in methanol, configure solution B, quickly introduce solution B into solution A, and let it stand for a period of time to obtain CaCO 3 @PDA @ZIF‑8. Finally, the CaCO 3 @PDA@ZIF‑8 was placed in a tube furnace for high-temperature carbonization to obtain the product. The preparation process of the present invention is highly controllable; the organic framework compound and nano-CaCO 3 It can be uniformly compounded, and the prepared nitrogen-doped porous carbon has adjustable specific surface area, pore structure and surface properties, and has good electrochemical performance.

The invention provides a silicon-based composite negative electrode material for a lithium ion battery and a preparation method thereof. The silicon-based composite negative electrode material is composed of silicon, silicon oxide, doped metal and carbon material, wherein silicon and doped metal are dispersed in silicon In the substrate formed by oxides, the carbon material is evenly coated on the surface of the material particles, and the negative electrode material is an in-situ nanoscale bulk phase doped metal; the doping metal is selected from the fourth and fifth period transition metal elements and / or the first One or more of the four or five main group metal elements; the total mass of the silicon-based composite negative electrode material is calculated as 100%, the mass of the doped metal accounts for 3-12%, and the mass of the carbon material accounts for 1-10% . Doping metal in silicon oxide can release a part of lithium in the buffer layer through the reverse conversion reaction, and inhibit the agglomeration and growth of the silicon crystal region during the cycle, and improve the first Coulombic efficiency, rate and cycle performance of the negative electrode material.

The invention relates to a semiconductor device preparing method. The method comprises the following steps: a semiconductor substrate is provided, wherein the semiconductor substrate at least includes a gate structure; and grooves are formed in two sides of the gate and a SiGeB layer is grown in the grooves through epitaxial growth. The method is characterized in that B is doped in an in-situ manner while performing the epitaxial growth of the SiGe layer, and the epitaxial growth comprises two stages: the first stage is to increase the concentration of B in the SiGe layer to make the concentration of B in the SiGe layer reaches the peak concentration; and the second stage is to reduce the concentration of B in the SiGe layer so as to eliminate the short-channel effect. Through the method of the invention, not only a more flat doping tail contour can be acquired after the B doping process is performed so as to reduce the junction leakage phenomenon, and the method can skip the separate ion implantation process so as to make the stress in the channel region maintained; and but also the method can be used to make the doping concentration of B at channels is low so as to eliminate the short-channel effect to make prepared devices have good performances.