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Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line

A room temperature ferromagnetic and nanowire technology, applied in chemical instruments and methods, from chemical reactive gases, crystal growth and other directions, to achieve the effects of low preparation temperature, controllable reaction conditions and high crystal quality

Inactive Publication Date: 2007-02-07
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solved the problem of rational doping of magnetic element Mn in semiconducting ZnO nanowires

Method used

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  • Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line
  • Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line
  • Method of preparing room temperature ferromagnetism Zn(1-X)Mn(X)O diluted magnetic semiconductor nano-line

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Experimental program
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Effect test

Embodiment 1

[0021] The silicon wafer was cleaned with hydrochloric acid, rinsed with deionized water, then cleaned with acetone, and finally rinsed with deionized water. Zn powder and MnCl 2 The powder is placed adjacent to the middle of the quartz boat, and the silicon wafer is covered at the junction of the two evaporation sources, and the vertical distance from the evaporation source is 7mm. Put the quartz boat into the tube furnace, the inlet of the system can be fed with gas, and the gas is introduced into the water with a rubber tube at the outlet. The system was fed with 300 ml / min of argon, and after 8 minutes, the flow rate of argon was changed to 30 ml / min. Heat the tube furnace to 810°C, keep the system pressure at atmospheric pressure, keep it warm for 120min and then cool it down to room temperature naturally to get Zn 1-x mn x O(x=10%) nanowires. The diameter of the nanowire is 30-100 nm, and the length is 7-18 μm.

[0022] The structure of the product was analyzed by a...

Embodiment 2

[0024] The silicon wafer was cleaned with hydrochloric acid, rinsed with deionized water, then cleaned with acetone, and finally rinsed with deionized water. Zn powder and MnCl 2 The powder is placed adjacent to the middle of the quartz boat, and the silicon wafer is covered at the junction of the two evaporation sources, and the vertical distance from the evaporation source is 7mm. Put the quartz boat into the tube furnace, the inlet of the system can be fed with gas, and the gas is introduced into the water with a rubber tube at the outlet. The system is fed with 400 ml / min of argon, and after 5 minutes, the flow of argon is changed to 50 ml / min. Heat the tube furnace to 830°C, maintain the system pressure at atmospheric pressure, keep it warm for 150 minutes, and then cool it down to room temperature naturally to obtain Zn 1-x mn x O(x=20%) nanowires. The diameter of the nanowire is 60-150 nm, and the length is 10-22 μm.

Embodiment 3

[0026] The silicon wafer was cleaned with hydrochloric acid, rinsed with deionized water, then cleaned with acetone, and finally rinsed with deionized water. Zn powder and MnCl 2The powder is placed adjacent to the middle of the quartz boat, and the silicon wafer is covered at the junction of the two evaporation sources, and the vertical distance from the evaporation source is 8mm. Put the quartz boat into the tube furnace, the inlet of the system can be fed with gas, and the gas is introduced into the water with a rubber tube at the outlet. The system was fed with 340 ml / min of argon, and after 7 minutes, the argon flow rate was changed to 40 ml / min. Heat the tube furnace to 805°C, keep the system pressure at atmospheric pressure, keep it warm for 140min, and then cool it down to room temperature naturally to get Zn 1-x mn x O(x=3.5%) nanowires. The diameter of the nanowire is 30-80 nm, and the length is 5-14 μm.

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Abstract

the invention discloses a preparing method of indoor-temperature magnetic Zn1-xMnxO nanometer line in the rare-magnetic semiconductor nanometer material preparing domain, which comprises the following steps: cleaning silicate through HCl and acetone; adopting Zn powder and MnCl2 powder and evaporating source in the adjacent quartz ship; making silicate as receiving substrate at intersecting part of two evaporating source vertically; setting the vertical distance between silicate and evaporating source at 6-8 mm; placing quartz ship in the pipe-typed furnace; aerating gas in the system inlet; conducting gas in the water through rubber conduct; aerating argon gas at 300-400ml / min for 5-8 min; changing the flow of argon gas at 30-50 ml / min; heating the pipe-typed furnace at 800-830 deg.c; maintaining the system pressure at atmospheric condition; keeping temperature for 120-150 min; cooling to indoor temperature naturally to obtain the even-distributing Zn1-xMnxO nanometer line.

Description

technical field [0001] The invention belongs to the field of preparation of dilute magnetic semiconductor nanomaterials, and in particular provides a method for preparing room temperature ferromagnetic Zn by vapor deposition. 1-x mn x O methods for dilute magnetic semiconductor nanowires. Background technique [0002] Electrons in solids are both charge carriers and spin carriers. Spintronic materials provide the possibility of using both the charge and spin characteristics of electrons at the same time, so the use of spintronic materials will achieve a significant increase in data storage capacity and processing speed. Diluted Magnetic Semiconductor (DMS) introduces magnetic ions into semiconductor materials, successfully realizes the combination of magnetic materials and semiconductor materials, and is one of the ideal materials for preparing spintronic devices. However, whether DMS can still maintain ferromagnetism at room temperature is a key factor in determining its...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/22C30B29/62
Inventor 常永勤
Owner UNIV OF SCI & TECH BEIJING
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