The invention discloses a
mixed crystal plane
silicon-on-insulator (SOI) bipolar complementary
metal oxide semiconductor (
BiCMOS) integrated device based on a square channel process and a preparation method. The method comprises the following steps of: preparing an
SOI substrate, continuously growing N-Si, P-SiGe and N-Si
layers on the
SOI substrate, preparing an deep groove
isolator, forming a collector, a base and an emitter contact area, and forming a SiGe
heterojunction bipolar
transistor (HBT) device; photo-
etching an active area of a p-channel
metal oxide semiconductor (PMOS) device, continuously growing 7
layers of materials in the active area, preparing a drain and a grid, and forming the PMOS device; photo-
etching a groove of an active area of an n-channel
metal oxide semiconductor (NMOS) device, continuously growing 4
layers of materials in the active area, preparing a grid
dielectric layer and grid polycrystalline, and forming the NMOS device; and photo-
etching lead holes, alloying, photo-etching leads, and thus forming the
mixed crystal plane SOI
BiCMOS integrated device and a
mixed crystal plane SOI
BiCMOS integrated circuit of which
CMOS conductive channels are 22 to 45 nanometers based on the square channel process. By fully using the characteristic of mobility
anisotropy of a strain Si material, the mixed
crystal plane SOI BiCMOS
integrated circuit with enhanced performance is prepared at the temperature between 600 and 800 DEG C.