Method and device for preparing passivation contact solar cell by plate-type equipment

Abstract

The invention provides a method for preparing a solar cell with a passivation contact structure by plate-type equipment. The method comprises the following steps: S1, selecting a crystalline silicon substrate; S2, in the plate-type integrated continuous coating equipment, enabling the crystalline silicon substrate to firstly enter an ALD process cavity to deposit a tunneling oxide layer and then enter a PECVD process cavity to continuously deposit a doped amorphous silicon layer; S3, annealing the crystalline silicon substrate to form a doped polycrystalline silicon layer; S4, preparing a silicon nitride anti-reflection layer on the surface of the doped polycrystalline silicon layer, and preparing an aluminum oxide passivation layer and a silicon nitride anti-reflection layer on the othersurface of the doped polycrystalline silicon layer; and S5, preparing metal conductive electrodes on the front surface and the back surface of the crystalline silicon substrate in a silk-screen printing manner. Plate-type transmission is adopted, the tunneling oxide layer and the doped amorphous silicon layer can be continuously prepared in one set of equipment, so procedures are reduced; the ALDand PECVD process temperature is low, so that the badness caused by bending of the silicon wafer can be reduced; and the PECVD process is free of winding plating, the later cleaning step is reduced, and in-situ doping can be realized to reduce the subsequent independent phosphorus doping process.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic cells, in particular to a method and a device for preparing passivated contact solar cells with plate equipment. Background technique [0002] With the continuous development of the photovoltaic industry, the market competition is becoming more and more fierce. Improving the conversion efficiency of batteries and reducing the cost of electricity of products is the eternal direction of the industry. Surface recombination is a major factor affecting the efficiency of solar cells. Passivating the surface of crystalline silicon to reduce the surface recombination rate can effectively improve the conversion efficiency of the cell. Tunneling oxide passivation contact technology (TOPCon) is a cutting-edge and popular technology in the industry to reduce the surface recombination rate: first deposit a layer of tunneling oxide layer on the surface of the silicon wafer, and then cover a layer o...

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Problems solved by technology

[0005] 1. Three sets of equipment are required to complete the above three processes separately; although thermal oxidation growth of oxide layer and CVD deposition of amorphous silicon layer can be realized in the same tube furnace, but due to the inconsistent process temperature, it takes longer to heat up, Waiting time for cooling down, resulting in low production capacity;

[0006] 2. In the third step of doping, if the method of ion implantation is used, the machine is relatively expensive; if the method of phosphorus diffusion is used, a mask is required to achieve single-sided doping, and the process is more complicated;

[0007] 3. The process temperature of thermal oxidation and CVD method is above 550°C. High temperature will cause large curvature of silicon wafer.

[0009] Affect the product yield, and at the same time, the reaction gas will spread to the back of the substrate to react and deposit to form a film to form wrapping plating. It is necessary to increase the step of wrapping plating and increase the cost

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