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51results about How to "Fast light response" patented technology
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A PIN structure TiO2 base ultraviolet detector and its making method
InactiveCN101055902AHigh external quantum efficiency and sensitivityQuick responseFinal product manufactureSemiconductor devicesBroadbandLight source
The invention relates to a PIN structural TiO2 base ultraviolet light detector for ultraviolet light detector and its manufacturing method. The ultraviolet light detector comprises a conductive substrate, a N-type semiconductor contact layer, an intrinsic TiO2 active layer and a P-type wide-band-gap semiconductor contact layer. The manufacturing method of the ultraviolet light detector comprises the following step: preparing the N-type semiconductor contact layer on the conductive substrate after pretreatment; preparing the intrinsic TiO2 active layer on the N-type semiconductor contact layer; carrying out a partial etching to the around part of the active layer by using a dry etching technology; preparing the P-type contact layer on the etching part of the active layer; preparing a P-type ohmic electrode on the P-type contact layer; and preparing a N-type ohmic electrode on the conductive substrate. The invention has a plurality of advantages such as high external quantum efficiency and sensitivity, rapid response speed, small dark current, small and exquisite volume, cheap cost, and long service life. The film preparation technology is convenient and maturate. The interference of light sources except the ultraviolet ligh may be prevented.
Owner:DALIAN MARITIME UNIVERSITY
Single photon detector based on superconducting film material and method of manufacture
InactiveCN101339077AFast light responseHigh sensitivityNanostructure manufactureInstrumentsOptical pathFilm material
The invention discloses a single-photon detector based on the superconducting thin film material, which comprises an optical path system, a superconducting device and an electric system. The optical path system is used for coupling, transmitting and regulating incident optical signals; the superconducting device is used for detecting incident photon signals in the environment of low temperature; the electric system is used for reading, processing and analyzing electric signals. The invention also discloses a manufacturing method of the superconducting device of the single-photon detector. The method comprises the following steps: the growth of the superconducting thin film; the graphic design and micro processing of the superconducting device. The single-photon detector has the advantages of high sensitivity, low dark counting, high repeating speed, and so on, and has important prospects of application in a plurality of fields.
Owner:NANJING UNIV
Black phosphorus/molybdenum disulfide heterojunction-based photodetector
The invention discloses a black phosphorus / molybdenum disulfide heterojunction-based photodetector, belongs to the technical field of photodetection and aims at solving the problems that a device does not have wide-spectrum, fast and low-noise response characteristics, does not have the compatibility with a CMOS process and is small in volume, easy to integrate and adjustable in response spectrum range. The black phosphorus / molybdenum disulfide heterojunction-based photodetector comprises a silicon dioxide substrate layer, wherein a molybdenum disulfide layer is arranged on the silicon dioxide substrate layer; a black phosphorus conductive layer covers the upper surface of the molybdenum disulfide layer; the black phosphorus conductive layer and the molybdenum disulfide layer form a heterojunctio structure; and a first electrode layer and a second electrode layer are arranged on the black phosphorus conductive layer. The black phosphorus / molybdenum disulfide heterojunction-based photodetector is used for achieving a wide-spectrum and ultrafast-response photodetector.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Method for preparation of a-b orientated ZnO nanometer linear array
InactiveCN101038943AEasy to manufactureExcellent UV sensitivityNanostructure manufactureZinc oxides/hydroxidesEvaporationChemical vapor deposition
The invention provides a method for preparing ZnO nano line array in a-b orientation which belongs to electronic material technical field, relates to wide bond gap semiconductor ZnO luminescent material, especially relates to a method for preparing ZnO nano line array. The invention uses chemical vapor deposition technique, and employs pure ZnO powder as evaporation source and sapphire Al2O3 (1120) as substrate, and controls the temperature of the evaporation source to be no less than the thermal decomposition temperature of the ZnO powder and the temperature of the substrate to be no less than 750 DEG C. and vacuum degree at 200 to 300 torr, and employs Ar gas as transmission gas with gas flow rate of 35 sccm. In this manner, the ZnO powder is heated to decompose into Zn and O, and then by Ar gas transmission, the ZnO nano line array in a-b orientation is deposited on the substrate. The invention employs current chemical vapor deposition technique, and can easily prepare the ZnO nano line array in a-b orientation which has excellent uv sensitive character and quick light response speed.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Nano coaxial-cable heterojunction array base ultraviolet detector and manufacturing method thereof
InactiveCN102208479AFast shippingEasy to separateFinal product manufactureDecorative surface effectsCoaxial cableQuantum
The invention discloses a nano coaxial-cable heterojunction array base ultraviolet detector and a manufacturing method thereof. The detector comprises a substrate and a conductive film, a NiO@TiO2 nano coaxial-cable heterojunction array which is used as an ultraviolet absorbing layer and at least one N-type ohmic electrode are arranged on the conductive film, at least one P-type ohmic electrode is arranged on the NiO@TiO2 nano coaxial-cable heterojunction array; and the NiO@TiO2 nano coaxial-cable heterojunction array is composed of a TiO2 nano-tube array and a NiO nano-wire filled in the TiO2 nano-tube. The core structure of the detector provided by the invention is the nano coaxial-cable heterojunction array consisting of the TiO2 nano-tube array and the NiO nano-wire penetrating through the TiO2 nano-tube; the usage rate of a photo-generated carrier can be sufficiently improved, and the nano coaxial-cable heterojunction array base ultraviolet detector has the advantages of high external quantum efficiency and flexibility, small volume and the like.
Owner:DALIAN MARITIME UNIVERSITY
Two-dimensional superlattice indium selenide and preparation method and application thereof in fabrication of photoelectric detector
InactiveCN109411331AHigh electrical transport performanceImprove photoresponseSemiconductor/solid-state device manufacturingNanotechnologyPhotovoltaic detectorsIndium
The invention discloses two-dimensional superlattice indium selenide and preparation method and application thereof in fabrication of a photoelectric detector, and belongs to the field of a high-performance photoelectric detector. The fabrication method of the two-dimensional superlattice indium selenide comprises the steps of pre-processing a SiO2 / Si substrate; transferring onto the SiO2 / Si substrate after an InSe material is pasted with transparent glue, and immersing in acetone; and performing high-temperature processing under a vacuum condition, thereby obtaining a two-dimensional superlattice InSe nanosheet on a surface of the SiO2 / Si substrate. The two-dimensional superlattice InSe prepared by the invention has the advantages of high electrical transmission performance, high light response, favorable stability and rapid light response speed and has a good application prospect in the field of the high-performance photoelectric detector.
Owner:NORTHEAST FORESTRY UNIVERSITY
Photosensitive solder resist material with short exposure time and preparation method thereof
InactiveCN110540771AIncreased double bond contentFast light responsePhotomechanical apparatusInksResistGlycidyl methacrylate
The invention discloses a photosensitive solder resist material with short exposure time. The photosensitive solder resist material comprises the following components in parts by weight: 35-40 parts of photosensitive resin, 5-10 parts of polyurethane acrylate, 5-10 parts of acrylic acid monomers, 4-8 parts of epoxy resin, 1-4 parts of a pigment, 25-35 parts of a filler, 5-10 parts of a photoinitiator, 1-5 parts of an auxiliary agent and 3-8 parts of a solvent. Photosensitive resin is obtained by carrying out a polymerization reaction on acrylic acid and o-cresol formaldehyde epoxy resin, and then sequentially reacting a reaction product with anhydride and glycidyl methacrylate. The exposure time of the prepared photosensitive solder resist material is short, and is only 5-10 seconds, and the exposure time of traditional ink is generally about 20-25 seconds, so that the exposure time is shortened by 1-5 times compared with the traditional exposure time; the photosensitive solder resistmaterial also has the advantages of high temperature resistance, acid and alkali resistance, heat and oil resistance, high adhesive force and high hardness; and a solder resist mask obtained by coating has excellent insulativity and high temperature resistance.
Owner:江门市阪桥电子材料有限公司
Photoresponsive polymer gel factor, photoresponsive gel and preparation method of photoresponsive gel
ActiveCN110724251AStrong driving characteristics with weak stimulationWith dual response of light and heatPolymer scienceBackbone chain
The invention discloses a photoresponsive polymer gel factor, a photoresponsive gel and a preparation method of the photoresponsive gel. The photoresponsive polymer gel factor comprises a plurality ofphotoresponsive liquid crystal repeat units, wherein each photoresponsive liquid crystal repeat unit comprises azobenzene and derivative groups thereof, flexible chains and connecting groups. As theazobenzene and the derivative groups thereof are introduced into the main chain of a liquid crystal polymer gel factor, a three-dimensional network is formed through long alkyl chain accumulation, hydrogen bonding of the connecting groups and interactions of pi-pi, and the formed polymer gel has the characteristic of dual photothermal response; and the problems that a conventional azobenzene photoresponsive gel is slow in response speed and poor in mechanical property can be effectively solved, and in addition, the preparation method is simple.
Owner:HUAZHONG UNIV OF SCI & TECH
Spirooxazine photochromic compound changing from colorless to blue as well as preparation method and application of spirooxazine photochromic compound
PendingCN111808120AFast light responseFade quicklyOrganic chemistryTenebresent compositionsEngineeringLight responsive
The invention discloses a spirooxazine photochromic compound changing from colorless to blue as well as a preparation method and application of the spirooxazine photochromic compound, and belongs to the technical field of organic functional materials. The objective of the invention is to develop and meet aesthetic needs of customers. The invention discloses a photochromic compound with high outdoor stability and a formula of a coating thereof. The spirooxazine photochromic compound changing from colorless to blue prepared by the invention has the advantages of high photoresponse speed, high fading speed, stable performance in a closed-loop state in outdoor use, low-price and easily available synthetic raw materials and high operability of a synthetic process, and meets the market aestheticrequirements.
Owner:畅的新材料科技(上海)有限公司
Method for preparation of a-b orientated ZnO nanometer linear array
InactiveCN100428502CEasy to manufactureExcellent UV sensitivityNanostructure manufactureZinc oxides/hydroxidesEvaporationChemical vapor deposition
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Non-contact-type ice hockey shooting training device based on gravity sensor
InactiveCN102512806AFast light responseLight reaction speed increasedSport apparatusIce hockeyData signal
A non-contact-type ice hockey shooting training device based on a gravity sensor relates to training equipment, achieves light reaction exercise in specialized ice hockey training, and comprises an ice hockey stick, a goal, an electric control unit, an image projection system, a signal projector and the gravity sensor; a curtain is mounted in the goal; a sensing signal input end of the electric control unit is connected with a sensing signal output end of the signal projector; a projected image data signal output end of the electric control unit is connected with a projected image data signal input end of an image data processing device; and a drop point image data signal input end of the electric control unit is connected with a drop point image data signal input end of the image data processing device. Athletes respond according to luminous target points to carry out light reaction exercise and the choice reaction exercise. The response speed of athletes playing ice hockey can be improved through exercising the light reaction.
Owner:HARBIN NORMAL UNIVERSITY
Method of generating hot steam in all-weather manner by nearly totally absorbing sunlight by coupled gain localized surface plasma resonance absorbent
ActiveCN112066578AStrong absorption propertiesExcellent light-to-heat conversion performanceSolar heating energySolar heat collector for particular environmentWeather resistancePhysical chemistry
The invention discloses a method of generating hot steam in an all-weather manner by nearly totally absorbing sunlight by a coupled gain localized surface plasma resonance absorbent. The coupled gainlocalized surface plasma resonance absorbent is formed as a photothermal conversion substrate by means of a nano composite structure material which is good in structure and shape regulation and control, excellent in light absorption characteristic, simple in preparation process, short in preparation period, high in stability, low in cost and capable of absorbing sunlight nearly totally by ultrawide absorption of a single absorbent. Sunlight is focused directly to irradiate a dispersion solution of the absorbent, so that low energy density sunlight can be captured to prepare photothermal steam.The method is strong in weather resistance, captures sunlight all the daytime, and generates high-temperature, rapid and efficient photothermal steam and is excellent in average daily comprehensive photothermal performance. The problem that the efficiency is suddenly reduced as the photothermal conversion efficiency is reduced along with energy density of incident light is solved, and the problemthat it is hard to generate the high temperature, rapid and efficient photothermal steam at the same time and capture the sunlight with low energy density is solved.
Owner:王海龙
Organic field-effect transistor memory with self-blocking layer structure and fabrication method of organic field-effect transistor memory
ActiveCN106981573AEasy to storeImprove efficiencyMaterial nanotechnologySolid-state devicesInsulation layerOrganic field-effect transistor
The invention discloses an organic field-effect transistor memory with a self-blocking layer structure. A source-drain electrode, an organic photosensitive semiconductor layer, a gate insulation layer and a substrate are sequentially arranged from top to bottom, and a hybrid polymer self-blocking thin film layer is arranged between the organic photosensitive semiconductor layer and the gate insulation layer. The storage performance of the device is improved by a simple process means, so that the storage capacity, the switching speed and the tolerance of the device are greatly improved; and moreover, the fabrication cost of the device is reduced, and the promotion and application are convenient.
Owner:NANJING UNIV OF POSTS & TELECOMM
Electrolyte gate oxide semiconductor phototransistor for ultraviolet light detection
The present invention belongs to the semiconductor optoelectronic device technical field and relates to an electrolyte gate oxide semiconductor phototransistor for ultraviolet light detection. The electrolyte gate oxide semiconductor phototransistor for the ultraviolet light detection includes a polycrystalline or single-crystal semiconductor active layer which is located on an insulating substrate, a source / drain electrode, an insulating protective layer, an electrolyte gate dielectric which covers the active layer and the protective layer, and a gate electrode which contacts with the electrolyte. The electrolyte gate oxide semiconductor phototransistor is provided with an oxide semiconductor material having a wide optical bandgap, so that the electrolyte gate oxide semiconductor phototransistor can be low in cost and is transparent; the cut-off wavelength of the detector can be achieved by adjusting the compositions of the oxide semiconductor material; the oxide semiconductor ultraviolet detector is based on a field effect transistor structure, so that the oxide semiconductor ultraviolet detector has higher responsiveness, a higher signal to noise ratio and higher stability, and has no requirements for harsh vacuum environments; and the electrolyte having a high dielectric constant is adopted as the gate dielectric layer, and therefore, the structure of the phototransistor is simple, and at the same time, the working voltage of the phototransistor is greatly reduced.
Owner:SUN YAT SEN UNIV
MgGa2O4 ultraviolet detector and preparation method thereof
PendingCN111816720AImprove crystal qualityReduce dark currentFinal product manufactureSemiconductor/solid-state device manufacturingPhysicsThin membrane
The invention provides an MgGa2O4 ultraviolet detector and a preparation method thereof. The method comprises steps S1, taking an organic magnesium compound as a magnesium source, an organic gallium compound as a gallium source, taking high-purity oxygen as an oxygen source, and growing an MgGa2O4 film on a surface of a substrate through employing a metal organic compound chemical vapor depositionmethod; S2, forming an interdigital electrode mask on the MgGa2O4 film by using negative photoresist photoetching, and removing the interdigital electrode mask after metal sputtering of the interdigital electrode mask to form an interdigital electrode; and S3, pressing In particles on the interdigital electrode to obtain the MgGa2O4 ultraviolet detector with the MSM structure. Compared with the prior art, the MgGa2O4 film is prepared by using a metal organic compound chemical vapor deposition method, by increasing the oxygen flow, increasing the oxygen partial pressure and reducing the oxygendefect, the prepared MgGa2O4 film has characteristics of high crystallization quality, no phase splitting, steep absorption cut-off edge and the like, so the ultraviolet detector containing the MgGa2O4 film has lower dark current and higher photoresponse speed.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Method for improving optical switching frequency of GaN ultraviolet detector
ActiveCN110729364ALower captureAccelerated direct transition recombinationMaterial nanotechnologyFinal product manufactureSio2 nanoparticleUltraviolet lights
The invention discloses a method for improving the optical switching frequency of a GaN ultraviolet detector. The method comprises the following steps: 1) growing an epitaxial layer on a Si substrate;2) depositing SiO2 nanoparticles on the detector; 3) etching the bottom of the Si substrate to form a groove; 4) and performing infrared radiation on detector. The detector is heated by infrared irradiation when detecting ultraviolet light to assist the response test of the optical switch. Firstly, the effects of thermal excitation and infrared excitation of carriers are utilized to reduce the capture probability of the trap center to the photo-generated carriers and accelerate the direct transition recombination of the photo-generated carriers so as to improve the optical response speed of the detector; and secondly, the method can be applied to photovoltaic GaN ultraviolet detectors with various structures and is helpful for the detectors to realize fast and high-sensitivity ultravioletdetection.
Owner:SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
ZnMgO ultraviolet detector and preparation method thereof
InactiveCN111785793AImprove crystal qualityAbsorption cut-off is steepFinal product manufactureSemiconductor/solid-state device manufacturingOrganozinc compoundZinc compounds
The invention provides a ZnMgO ultraviolet detector and a preparation method thereof, and the method comprises the steps: S1, taking an organic zinc compound as a zinc source, taking an organic magnesium compound as a magnesium source, taking high-purity oxygen as an oxygen source, and growing a ZnMgO film on the surface of a substrate by adopting a metal organic compound chemical vapor depositionmethod; S2, forming an interdigital electrode mask on the ZnMgO film by using negative photoresist photoetching, and removing the interdigital electrode mask after sputtering metal on the interdigital electrode mask to form an interdigital electrode; and S3, pressing In particles on the interdigital electrode to obtain the ZnMgO ultraviolet detector with the MSM structure. Compared with the priorart, the oxygen flow is increased, the oxygen partial pressure is increased, and oxygen defects are reduced; the prepared ZnMgO film has the characteristics of high crystallization quality, no phasesplitting, steep absorption cut-off edge and the like, and the ZnMgO film 2 with the mixed-phase structure can simultaneously meet high responsivity and low dark current, so that the ZnMgO ultravioletphotoelectric detector has lower dark current and higher photoresponse speed.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Contact-type ice hockey shooting training device based on gravity sensor
InactiveCN102512801AFast light responseLight reaction speed increasedSport apparatusControl signalIce hockey
A contact-type ice hockey shooting training device based on a gravity sensor relates to training equipment, and achieves light reaction exercise in specialized ice hockey training. A goal baffle is mounted at the rear part of a goal outline border; a simulated goalkeeper is mounted on a guiding element on a goalkeeper control line in the front of a goal; the edge of a bottom layer is fixedly connected with the edge of a light-transmitting surface layer so as to form a hollow bag; a luminous body fixed layer and an elastic layer are both positioned in the hollow bag; the gravity sensor and a signal projector are mounted on an ice hockey stick; control signal input ends of LED luminous points are connected with a luminous signal output end of a luminous body driving circuit; a luminous signal input end of the luminous body driving circuit is connected with a luminous control signal output end of a control circuit; a control signal input end of the guiding element is connected with a guiding signal output end of a guiding element driving circuit; and a guiding control signal input end of the guiding element driving circuit is connected with a guiding control signal output end of the control circuit. Through the use of the training device, the light reaction of athletes is exercised through making the goal baffle to be luminous.
Owner:HARBIN NORMAL UNIVERSITY
Ultraviolet light-driven molecular crystal-polymer composite film material and preparation method thereof
The invention discloses an ultraviolet light-driven molecular crystal-polymer composite film material and a preparation method thereof. The composite thin film material includes: a polymer thin film, and nanocrystals of organic dye molecules distributed in the thin film. Structured organic dye molecules. Preferably, the organic dye molecular nanocrystals form an array structure in a closely arranged manner. The preparation method of the composite material includes: uniformly mixing the organic dye molecular nanocrystals and the polymer in a solvent, spreading them on the substrate, allowing the organic dye molecular nanocrystals to self-assemble, and volatilizing the solvent, so as to obtain the composite material. film material. The composite film material of the invention has the characteristics of large size, large deformation, good flexibility, fast light response speed, simple preparation, low cost, stable physical and chemical properties, deformation direction not affected by light direction, and the like.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
A flexible image sensor based on hair and its manufacturing method
ActiveCN109103212BAir stabilizationRaw materials are easy to getFinal product manufactureSolid-state devicesMetallic electrodeDevice material
The invention belongs to the technical field of semiconductor devices, in particular to a hair-based flexible image sensor and a manufacturing method thereof. The manufacturing method includes: preparing a hair base→preparing a light-sensitive material on the hair base→assembling the prepared light-sensitive material based on the hair into an image sensor on a flexible substrate. The invention utilizes the characteristics of hair such as excellent flexibility, low cost, renewability, easy degradation, stability in the air, and easy cutting, and uses it as a growth base for light-sensitive materials. The flexible image sensor includes: a flexible substrate, a photosensitive material grown on hair and metal electrodes. The flexible image sensor of the present invention has the advantages of high sensitivity to ultraviolet light, low cost, good flexibility, light weight, etc., and can still clearly display graphics under various bending angles, and has huge potential applications.
Owner:INST OF METAL RESEARCH - CHINESE ACAD OF SCI
A spintronic device and preparation method for realizing visible light-controlled interfacial magnetism
ActiveCN109768155BOvercome stabilityOvercome energy consumptionMagnetic-field-controlled resistorsGalvano-magnetic material selectionHeterojunctionChemical reaction
A spin electronic device that realizes visible light regulation of interface magnetism, including a substrate, a bottom electrode, a magnetic layer, an active layer and a top electrode; the bottom electrode is arranged on the upper surface of the substrate, the magnetic layer is arranged on the upper surface of the bottom electrode, and the active layer is arranged On the upper surface of the magnetic layer, a top electrode is disposed on the upper surface of the active layer; the active layer includes a donor and an acceptor. The spin electronic device of the present invention that realizes visible light control of interface magnetism uses a light-electromagnetic triple coupling organic semiconductor solar cell / ferromagnetic heterojunction, instead of a simple ionic liquid to control interface magnetism, and there is no chemical reaction and Corrosion problem also overcomes the problems of unstable photo-controlled magnetism and high energy consumption of existing solar photovoltaic spintronics devices.
Owner:XI AN JIAOTONG UNIV
Liquid crystal compound containing acetal ring and preparation method thereof
ActiveCN104745200BPositive dielectric anisotropyWith nematic phase liquid crystal intervalLiquid crystal compositionsOrganic chemistrySolubilityAryl
The invention discloses a liquid crystal compound containing acetal. A structural formula of the compound is as shown in the specification, wherein R is C2-C5 linear alkyl, m is 0 or 1, and cyclohexyl is trans-cyclohexyl. The liquid crystal compound is obtained by enabling substituted aryl alkynol and substituted benzenepropanal acetal to generate sonogashira coupling reaction, and the synthesis method is simple, relatively low in cost, and suitable for industrial production. The liquid crystal compound disclosed by the invention has positive dielectric anisotropy and a certain nematic phase liquid crystal region, a relatively high clearing point and proper optical anisotropy, is excellent in solubility with other liquid crystal compounds, and can be applied to an IPS display mode and a TN display mode.
Owner:XIAN CAIJING OPTO ELECTRICAL SCI & TECH
Class II superlattice infrared detector with broadband absorption enhancement structure and preparation method thereof
PendingCN114373821AFast light responseReduce dark currentSemiconductor devicesFinal product manufacturePhysicsIr detector
The invention relates to a class-II superlattice infrared detector with a broadband absorption enhancement structure and a preparation method thereof, and belongs to the technical field of semiconductor infrared detectors. The detector comprises the following structures: a substrate layer; the heavily doped reflecting layer extends on the substrate layer; the buffer layer is epitaxially arranged on the heavily doped reflecting layer; the electrode I type superlattice layer and the electrode II type superlattice layer are arranged on the buffer layer; the electrode II and the asymmetric microstructure array layer are arranged on the type-II superlattice layer in a manner that the electrode II surrounds the asymmetric microstructure array layer; and the graphene layer covers the electrode II and the asymmetric microstructure array layer. An asymmetric plasma structure is constructed through a heavily doped reflecting layer, an intermediate class-II superlattice layer and an asymmetric microstructure array layer with a specific structure on the class-II superlattice layer, so that the light response speed, the specific detection rate and the absorptivity of the infrared detector are improved, and the dark current of the infrared detector is reduced. The detector has a broadband absorption enhancement function, is short in manufacturing period and low in cost, and is suitable for expanded production.
Owner:CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
Tunnel compensating superlattice infrared detector
ActiveCN108538935AMature growth processEasy to manufactureSemiconductor devicesPower flowContact layer
The invention discloses a tunnel compensating superlattice infrared detector, and belongs to the field of semiconductor optoelectronics. The original tunnel compensating multi-active region infrared detector improves the defects that the conventional multiquantum well or superlattice structured infrared detector has small photocurrent and large dark current, yet the original tunnel compensating multi-active region infrared detector is relatively large in production difficulty and low in yield. A lower contact layer is grown on a substrate, then one or more basic units are grown, an upper contact layer is grown, and a table surface and electrodes are produced, wherein the basic units are sequentially a blocking barrier, a superlattice infrared absorption region, a heavily doped N-type region and a heavily doped P-type region; the tunnel compensating superlattice infrared detector is characterized in that a superlattice structure is used as an infrared absorption region of the detector,so that control requirements on epitaxial structural parameters are reduced; the heavily doped N-type region and the heavily doped P-type region form a tunnel junction for providing tunnel compensating current for the superlattice; the blocking barrier has the thickness of 30-50nm so as to reduce the dark current of a device. The tunnel compensating superlattice infrared detector has the advantages of large photocurrent, low dark current, fast response and the like of the tunnel compensating multi-active region infrared detector.
Owner:BEIJING UNIV OF TECH
Gene therapy to improve vision
InactiveUS20180030477A1Rapid responseHigh sensitivitySenses disorderCell receptors/surface-antigens/surface-determinantsRod Photoreceptor CellsGene product
The invention relates to the use of gene therapy vectors to improve vision by introducing into healthy rod photoreceptor cells of a patient suffering from cone photoreceptor dysfunction and / or degeneration a nucleic acid encoding a gene product that is light-sensitive and / or that modulates endogenous light-sensitive signaling in a photoreceptor cell, such that the range of light intensities to which the rod photoreceptor responds is extended and / or the speed at which the rod photoreceptor responds to light is increased.
Owner:UCL BUSINESS PLC
Contact-type ice hockey shooting training device based on gravity sensor
InactiveCN102512801BFast light responseLight reaction speed increasedSport apparatusControl signalIce hockey
A contact-type ice hockey shooting training device based on a gravity sensor relates to training equipment, and achieves light reaction exercise in specialized ice hockey training. A goal baffle is mounted at the rear part of a goal outline border; a simulated goalkeeper is mounted on a guiding element on a goalkeeper control line in the front of a goal; the edge of a bottom layer is fixedly connected with the edge of a light-transmitting surface layer so as to form a hollow bag; a luminous body fixed layer and an elastic layer are both positioned in the hollow bag; the gravity sensor and a signal projector are mounted on an ice hockey stick; control signal input ends of LED luminous points are connected with a luminous signal output end of a luminous body driving circuit; a luminous signal input end of the luminous body driving circuit is connected with a luminous control signal output end of a control circuit; a control signal input end of the guiding element is connected with a guiding signal output end of a guiding element driving circuit; and a guiding control signal input end of the guiding element driving circuit is connected with a guiding control signal output end of the control circuit. Through the use of the training device, the light reaction of athletes is exercised through making the goal baffle to be luminous.
Owner:HARBIN NORMAL UNIVERSITY
Non-contact-type ice hockey shooting training device based on gravity sensor
InactiveCN102512806BFast light responseLight reaction speed increasedSport apparatusIce hockeyData signal
A non-contact-type ice hockey shooting training device based on a gravity sensor relates to training equipment, achieves light reaction exercise in specialized ice hockey training, and comprises an ice hockey stick, a goal, an electric control unit, an image projection system, a signal projector and the gravity sensor; a curtain is mounted in the goal; a sensing signal input end of the electric control unit is connected with a sensing signal output end of the signal projector; a projected image data signal output end of the electric control unit is connected with a projected image data signal input end of an image data processing device; and a drop point image data signal input end of the electric control unit is connected with a drop point image data signal input end of the image data processing device. Athletes respond according to luminous target points to carry out light reaction exercise and the choice reaction exercise. The response speed of athletes playing ice hockey can be improved through exercising the light reaction.
Owner:HARBIN NORMAL UNIVERSITY
2D ga1- x in x se alloy and its preparation method and its application in the preparation of photoelectric detection
InactiveCN109285900BWide photoresponse rangeImprove photoresponseMetal selenides/telluridesSemiconductor devicesIndiumVisible near infrared
Owner:NORTHEAST FORESTRY UNIVERSITY
A kind of organic field effect transistor memory with self-blocking layer structure and preparation method thereof
ActiveCN106981573BEasy to storeImprove efficiencyMaterial nanotechnologySolid-state devicesOrganic field-effect transistorThin membrane
Owner:NANJING UNIV OF POSTS & TELECOMM
A Photodetector with Tunable Energy Bandgap Based on Black Phosphorus/Molybdenum Disulfide Heterojunction
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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