Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparation of a-b orientated ZnO nanometer linear array

A nanowire array and orientation technology is applied in the field of preparation of ZnO nanowire arrays to achieve the effects of excellent ultraviolet light sensitivity, fast light response speed and high deposition rate

Inactive Publication Date: 2008-10-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the reported preparation methods are c-axis preferentially oriented ZnO nanoarrays; however, ZnO nanowire arrays with obvious a-b orientation, that is, ZnO nanowire arrays grown with the C axis parallel to the substrate, have not yet been reported.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparation of a-b orientated ZnO nanometer linear array
  • Method for preparation of a-b orientated ZnO nanometer linear array
  • Method for preparation of a-b orientated ZnO nanometer linear array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In the present invention, the ZnO nanowires are prepared by using a dual-temperature zone CVD system. The whole system can be divided into gas circuit part, growth chamber and control part.

[0027] The specific implementation steps are as follows:

[0028] 1. Preparation of Evaporation Source

[0029] In the present invention, analytical pure ZnO powder produced by Tianjin Institute of Chemical Reagents is used as evaporation source.

[0030] 2. Sapphire Al 2 O 3 (1120) cleaning step of substrate substrate:

[0031] 1) scrubbing;

[0032] 2) Soak: use potassium dichromate solution, then wash with deionized water;

[0033] 3) Ultrasonic cleaning 1: deionized water, 5 to 10 minutes, twice;

[0034] 4) Ultrasonic cleaning 2: 5 to 10 minutes in acetone, twice;

[0035] 5) Ultrasonic cleaning 3: in absolute ethanol, 5 to 10 minutes, twice;

[0036] 6) drying;

[0037] 7) Standby.

[0038] 3. CVD synthesis of ZnO nanowires

[0039]Using the high temperature therm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
currentaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing ZnO nano line array in a-b orientation which belongs to electronic material technical field, relates to wide bond gap semiconductor ZnO luminescent material, especially relates to a method for preparing ZnO nano line array. The invention uses chemical vapor deposition technique, and employs pure ZnO powder as evaporation source and sapphire Al2O3 (1120) as substrate, and controls the temperature of the evaporation source to be no less than the thermal decomposition temperature of the ZnO powder and the temperature of the substrate to be no less than 750 DEG C. and vacuum degree at 200 to 300 torr, and employs Ar gas as transmission gas with gas flow rate of 35 sccm. In this manner, the ZnO powder is heated to decompose into Zn and O, and then by Ar gas transmission, the ZnO nano line array in a-b orientation is deposited on the substrate. The invention employs current chemical vapor deposition technique, and can easily prepare the ZnO nano line array in a-b orientation which has excellent uv sensitive character and quick light response speed.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, relates to a wide band gap semiconductor ZnO light-emitting material, and particularly relates to a preparation method of a ZnO nanowire array. technical background [0002] In recent years, ZnO has become another research hotspot after GaN materials due to its large exciton binding energy (60 mev), which can obtain high-efficiency ultraviolet light emission at room temperature. Among them, the ZnO nanowire array system is expected to be used as the next generation of nano-optical devices. The first attention is that highly oriented ZnO nanowire arrays act as natural laser resonators, which can generate ultraviolet laser when excited, and ZnO nanowires have an extremely low photoexcitation threshold of 40 kW / cm 2 (Film material is 300kW / cm 2 ~4MW / cm 2 ), chemical activity and one-dimensional nanostructure, making ZnO nanowires one of the ideal materials for making ultraviolet nano...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/365C23C16/40C23C16/448B82B3/00C01G9/02
CPCY02P70/50
Inventor 邓宏韦敏陈金菊戴丽萍
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com