Black phosphorus/molybdenum disulfide heterojunction-based photodetector

Abstract

The invention discloses a black phosphorus / molybdenum disulfide heterojunction-based photodetector, belongs to the technical field of photodetection and aims at solving the problems that a device does not have wide-spectrum, fast and low-noise response characteristics, does not have the compatibility with a CMOS process and is small in volume, easy to integrate and adjustable in response spectrum range. The black phosphorus / molybdenum disulfide heterojunction-based photodetector comprises a silicon dioxide substrate layer, wherein a molybdenum disulfide layer is arranged on the silicon dioxide substrate layer; a black phosphorus conductive layer covers the upper surface of the molybdenum disulfide layer; the black phosphorus conductive layer and the molybdenum disulfide layer form a heterojunctio structure; and a first electrode layer and a second electrode layer are arranged on the black phosphorus conductive layer. The black phosphorus / molybdenum disulfide heterojunction-based photodetector is used for achieving a wide-spectrum and ultrafast-response photodetector.

Description

technical field [0001] The invention discloses a photodetector based on black phosphorus / molybdenum disulfide heterojunction, which is used to realize a photodetector with wide spectrum and ultrafast response, and belongs to the field of photodetection technology. Background technique [0002] The applicable spectral range and detection bandwidth of traditional photodetectors based on group IV and III-V semiconductor materials (such as silicon and gallium arsenide) are generally restricted by the energy band gap and carrier transit time of the material itself, so It is difficult to realize optical modulators with wide spectrum and ultrafast response. With the rapid development of science and technology, the requirements for device integration are getting higher and higher, and the device size needs to be continuously reduced. Devices based on traditional materials for photodetectors are approaching the limit. In recent years, more and more attention has been paid to the res...

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Problems solved by technology

[0004] The present invention provides a photodetector based on black phosphorus / molybdenum disulfide heterojunction in view of the above-mentioned deficiencies, which solves the problem that the device does not have wide spectrum, fast and low-noise response characteristics, and at the same time does not have compatibility with CMOS technology, volume Small, easy to integrate and responsive to problems with tunable spectral range

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