MgGa2O4 ultraviolet detector and preparation method thereof

A technology of ultraviolet detectors and thin films, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, and final products. It can solve the problems of large dark current of ultraviolet detectors, steep absorption cut-off edge of crystal quality, and low dark current.

Pending Publication Date: 2020-10-23
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

[0005] In order to solve the MgGa prepared by pulsed laser deposition and radio frequency magnetron sputtering 2 o 4 The quality of thin film crystals is not high, and there are many defect states, which lead to the problem of large dark current and low photoresponsivity of ultraviolet detectors. The present invention proposes a MgGa 2 o 4 Ultraviolet detector and its preparation method, using metal organic compound chemical vapor deposition method to prepare MgGa 2 o 4 thin film, making MgGa 2 o 4 The thin film has the advantages of high crystal quality, no phase separation, and steep absorption cut-off edge, which makes it possible to contain MgGa 2 o 4 Thin-film UV detectors have low dark current and fast photoresponse

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  • MgGa2O4 ultraviolet detector and preparation method thereof
  • MgGa2O4 ultraviolet detector and preparation method thereof
  • MgGa2O4 ultraviolet detector and preparation method thereof

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preparation example Construction

[0047] MgGa 2 o 4 The preparation method of thin film 2 is: using metal organic compound chemical vapor deposition (MOCVD) equipment, using organic magnesium compound as magnesium source, organic gallium compound as gallium source, heating the substrate to a certain temperature in an atmosphere of excess oxygen, and depositing MgGa 2 o 4 film.

[0048] The preparation method of interdigital electrode 3 is: in MgGa 2 o 4 Negative photolithography is used on the film to form an interdigital electrode mask, and a small coating machine is used to sputter metal on the interdigital electrode mask, and then the interdigital electrode mask is removed by ultrasonic methods to form interdigital electrodes.

[0049] The foregoing has specified the MgGa provided by the present invention 2 o 4 The structure of the UV detector. with the above MgGa 2 o 4 Corresponding to the ultraviolet detector, the present invention also provides a kind of MgGa 2 o 4 Preparation method of ultra...

Embodiment 1

[0071] Put the cleaned sapphire substrate into the growth chamber of the MOCVD equipment, adjust the growth temperature to 800°C, and the pressure to 4000Pa. Use dimethylmagnesocene as the magnesium source, trimethylgallium as the gallium source, the carrier gas flow rate of the magnesium source is 5 sccm, the carrier gas flow rate of the gallium source is 10 sccm, and the flow rate of high-purity oxygen gas is 500 sccm, which is much larger than the magnesium source and The flow rate of the gallium source, grow for 1h, turn off the organic source and oxygen, and reduce the substrate temperature to room temperature at 0.6°C / s to obtain MgGa 2 o 4 film.

[0072] MgGa 2 o 4 The film is moved into the annealing furnace, using an oxygen atmosphere, the oxygen flow rate is 12 sccm, and the temperature of the annealing furnace is raised to 800°C at a heating rate of 0.4°C / s. After 10min, the MgGa is taken out from the annealing furnace 2 o 4 film.

[0073] in MgGa 2 o 4 On t...

Embodiment 2

[0078] Put the cleaned sapphire substrate into the growth chamber of the MOCVD equipment, adjust the growth temperature to 700°C, and the pressure to 3000Pa. Use diethylmagnesocene as the magnesium source, triethylgallium as the gallium source, the carrier gas flow rate of the magnesium source is 20sccm, the carrier gas flow rate of the gallium source is 40sccm, and the flow rate of high-purity oxygen is 800sccm, which is much larger than the magnesium source and The flow rate of the gallium source, grow for 1.3h, turn off the organic source and oxygen, and lower the substrate temperature to room temperature at 0.5°C / s to obtain MgGa 2 o 4 film.

[0079] MgGa 2 o 4 Move the film into the annealing furnace, use an oxygen atmosphere, and the oxygen flow rate is 8sccm, raise the temperature of the annealing furnace to 600°C at a heating rate of 0.2°C / s, keep the temperature for 5min, and then remove the MgGa from the annealing furnace 2 o 4 film.

[0080] in MgGa 2 o 4 On...

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Abstract

The invention provides an MgGa2O4 ultraviolet detector and a preparation method thereof. The method comprises steps S1, taking an organic magnesium compound as a magnesium source, an organic gallium compound as a gallium source, taking high-purity oxygen as an oxygen source, and growing an MgGa2O4 film on a surface of a substrate through employing a metal organic compound chemical vapor depositionmethod; S2, forming an interdigital electrode mask on the MgGa2O4 film by using negative photoresist photoetching, and removing the interdigital electrode mask after metal sputtering of the interdigital electrode mask to form an interdigital electrode; and S3, pressing In particles on the interdigital electrode to obtain the MgGa2O4 ultraviolet detector with the MSM structure. Compared with the prior art, the MgGa2O4 film is prepared by using a metal organic compound chemical vapor deposition method, by increasing the oxygen flow, increasing the oxygen partial pressure and reducing the oxygendefect, the prepared MgGa2O4 film has characteristics of high crystallization quality, no phase splitting, steep absorption cut-off edge and the like, so the ultraviolet detector containing the MgGa2O4 film has lower dark current and higher photoresponse speed.

Description

technical field [0001] The invention relates to the technical field of semiconductor ultraviolet detection, in particular to a MgGa 2 o 4 Ultraviolet detector and its preparation method. Background technique [0002] Ultraviolet detection technology has broad application prospects in military and civilian fields such as missile tail flame detection, flame sensing, air and water purification, and air-to-air communication. Ultraviolet radiation with a wavelength of less than 280nm is blocked by the ozone layer above the earth and can hardly propagate to the surface of the earth. It is called solar blind ultraviolet radiation. The sun-blind ultraviolet detector working in the sun-blind band is not interfered by solar radiation, has higher sensitivity, and can be used in missile early warning and other aspects. In recent years, wide-bandgap semiconductor ultraviolet detectors are considered to be the third-generation ultraviolet detectors that can replace vacuum photomultipli...

Claims

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Application Information

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IPC IPC(8): H01L31/0328H01L31/108H01L31/18H01L21/02
CPCH01L31/0328H01L31/1085H01L31/18H01L21/02554H01L21/02565H01L21/0262Y02P70/50
Inventor 刘可为侯其超申德振陈星张振中李炳辉
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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