33results about How to "Etch stable" patented technology

The invention discloses a novel TFT copper-molybdenum laminated film etching liquid composition. The composition is prepared from the following components in percentage by weight: 5-30% of hydrogen peroxide, 0.1-5% of H2SO4, persulfide, chloride, 0.05-0.3% of a hydrogen peroxide stabilizer, 0.005-0.3% of a metal complexing agent, 0.005-0.2% of a surface active agent, 0.001-1% of imidazole additive as well as the balance of water, wherein the persulfide and the chloride are 0.01-0.5% in total in percentage by weight. The novel TFT copper-molybdenum laminated film etching liquid composition is uniform in copper-molybdenum laminated film etching, moderate in etching rate and long in service life.

Disclosed are: an etchant composition comprising (A) a copper ion source, (B) a source of an organic acid ion having one or more carboxyl groups in a molecule, (C) a fluoride ion source, (D) an etching controller, a surface oxidizing power enhancer or a combination thereof as a first additive, and (E) a surfactant as a second additive; a method for etching a multilayered film; and a method for preparing a display device.

The invention provides an etching solution for an IGZO (Indium Gallium Zinc Oxide) film and an etching method thereof. The etching solution for the IGZO film comprises an acid, a phosphate, hydrogen peroxide and water, and the pH value of the etching solution is not more than 5. By adopting the etching solution, the etching rate can be effectively controlled, so that the etching rate is uniform; the IGZO film can be etched stably, and some impuritiesaffecting the electrical properties of the IGZO are not introduced at the same time, so that the stability of an IGZO-TFT (Thin Film Transistor) device can be effectively improved. The etching method for the IGZO film adopts the etching solution for the IGZO film. By adopting the etching method, the etching rate can be effectively controlled, so that the etching rate is uniform; the IGZO film can be etched stably, and some impuritiesaffecting the electrical properties of the IGZO are not introduced at the same time, so that the stability ofan IGZO-TFT device can be effectively improved.

The invention discloses a copper-molybdenum metal etching solution and application thereof. The copper-molybdenum metal etching solution comprises the following components in percentage by weight: 1-21wt% of hydrogen peroxide, 0.01-10 wt% of a shape control agent, 0.01-5 wt% of an etching stabilizer, 1-13 wt% of a chelating agent, 0.01-8 wt% of a pH regulator, 0.01-2.39 percent of an etching additive and the balance of deionized water. According to the copper-molybdenum metal etching solution disclosed by the invention, the consistent etching rate on a copper-molybdenum double-layer metal structure layer can be kept in the etching process, the defect of copper hollowing corrosion caused by oxidation-reduction potential difference of copper-molybdenum double-layer metal is overcome, and a copper-molybdenum metal structure layer meeting the requirements is prepared.

The invention relates to the technical field of etching solutions and particularly relates to an etching solution for a touch screen and a preparation method thereof. Each liter of the etching solution consists of following raw materials: 180-220ml of hydrochloric acid, 5-20g of sodium dihydrogen phosphate, 70-90ml of hydrofluoric acid, 40-50ml of hydrogen peroxide, 3-7ml of 4-methyl-5-(2-acetoxylethyl)thiazole, 0.1-1ml of hexadecylpyridinium chloride and the balance water. In the invention, ferric trichloride is replaced by the hydrofluoric acid and the hydrogen peroxide so that the etching solution is free from being changed frequently, thereby not only saving resources but also reducing environmental pollution. Meanwhile, with addition of the hexadecylpyridinium chloride and the sodium dihydrogen phosphate having a slowly-releasing effect with combination of the hydrochloric acid, the hydrofluoric acid and the hydrogen peroxide, the etching solution is stable in etching, is moderated in etching, is uniform in etching, allows edges of the shape of an electrode to be tidy and is basically free of a side-erosion phenomenon.

The invention discloses an etching solution and a manufacturing method of an array substrate using the etching solution. The etching solution comprises the following components in percentage by mass: 10 to 20% of hydrogen peroxide, 0.05 to 5% of an etching inhibitor, 0.1 to 2% of a fluoride composition, 0.5 to 5% of a silicon etching aid, 2 to 10% of an etching additive, and a solvent. The etching solution has excellent etching performance on copper / molybdenum, copper / titanium or copper / molybdenum titanium metal layers of source and drain electrode layers, is low in cost, and can etch a semiconductor layer and reduce metal residues while keeping long service life of a device, so that problems caused by a subsequent dry etching process are reduced, even the dry etching process of the semiconductor layer can be directly omitted, the manufacturing cost is reduced, and the device stability is improved.

The invention provides wet etching equipment. The wet etching equipment comprises a bearing platform used for bearing a substrate, a spraying pipe which is arranged above the bearing platform for spraying an etching liquid to the surface of the substrate, a liquid knife which is arranged between the bearing platform and the spraying pipe and used for coating the surface of the substrate with the etching liquid, and an etching groove which is formed below the bearing platform and used for accommodating the etching liquid and the substrate; therefore, the three kinds of etching modes, including a spray mode, a dip mode and a puddle mode, can be integrated into the same etching unit, so that the machine table structure is reduced, the occupied space of the machine table is reduced, and the maintenance cost and time are lowered; and in addition, the substrate on the bearing platform moves along with the bearing platform in the etching process, without needing to transfer the substrate independently, so that the etching process is more stable, thereby reducing generation of mura.

The invention relates to the technical field of touch screen etching, and in particular relates to an etching line process with a fishing line. The etching line process comprises the following steps: (1) providing a soft substrate, and adding an etching-resistant ink layer on the surface of an ITO conductive layer of the soft substrate in a silk-screen manner; (2) powering on etching equipment to etch the soft substrate, setting a first fishing line contacting the lower surface of the soft substrate between adjacent rollers 1, driving the soft substrate to move through a roller group, spraying an etching liquid through a plurality of nozzles, and removing parts uncovered by the etching-resistant ink layer, of the ITO conductive layer; (3) spraying an ink removing liquid through an ink removing device, and removing the etching-resistant ink layer. As the fishing line which is good in softness and acid-base resistance is threaded between an etching line and rollers, and the fishing line is arranged above the soft substrate, so that the soft substrate can be prevented from being warped up or sunk down in the etching process; components of the etching liquid are matched with one another, so that etching can be performed uniformly and stably, and edges of etched electrode patterns can be tidy; the etching line process is low in cost, simple in process and high in etching efficiency.

Provided are a wafer heating and holding mechanism for a rotary table, a wafer heating method for a rotary table, and a wafer rotating and holding device with which a wafer put on a rotary table can be heated while being rotated stably under a state in which an in-plane temperature distribution of the wafer is maintained. The wafer heating and holding mechanism for a rotary table of a wafer rotating and holding device comprises: a rotary shaft; a rotary table placed on an end of the rotary shaft and configured to hold a wafer on an upper surface of the rotary table; a drive motor configured to supply motive power to the rotary shaft; and a heater provided above the rotary table and below the wafer while avoiding contact with the wafer to heat the wafer.

The invention relates to the technical field of etching solution, in particular to an etching solution for a touch screen and a preparation method thereof. Each liter of the etching solution consists of the following raw materials: 180-220 mL of hydrochloric acid, 5-20 g of sodium dihydrogen phosphate, 70-90 mL of hydrofluoric acid, Hydrogen peroxide 40-50mL, 4-methyl-5-(2-acetoxyethyl)thiazole 3-7mL, cetylpyridinium chloride 0.1-1mL, the balance is water. The present invention replaces ferric chloride with hydrofluoric acid and hydrogen peroxide, so there is no need to frequently replace the etching solution, which not only saves resources but also reduces pollution to the environment. Used in conjunction with sodium dihydrogen phosphate, hydrochloric acid, hydrofluoric acid, and hydrogen peroxide, the etching is stable, the etching speed is moderate, and the etching is uniform. The edges of the etched electrode pattern are neat and there is basically no side etching.

An etching solution for an IGZO film layer and an etching method therefor; the etching solution comprises an acid, a phosphate, hydrogen peroxide and water, and the pH value of the etching solution does not exceed 5, and the solution may effectively control etching rate such that etching rate is uniform, and thus an IGZO film layer (50) may be stably etched without introducing impurities that affect the electrical properties of IGZO, thereby effectively improving the stability of an IGZO-thin film transistor (TFT) device. The etching method for an IGZO film layer employs the foregoing etching solution for an IGZO film layer, and may effectively control etching rate such that etching rate is uniform, and thus an IGZO film layer (50) may be stably etched without introducing impurities that affect the electrical properties of IGZO, thereby effectively improving the stability of an IGZO-TFT device.

The invention discloses a TFT copper-molybdenum laminated film etching solution composition. The components and weight percentages of the composition are: 5-30% hydrogen peroxide, 0.1-5% H2SO4, persulfide, chloride, 0.005-0.3% hydrogen peroxide stabilizer, 0.005-0.3% metal complexing agent, 0.005-0.2% surfactant, 0.001-1% azole additives and the balance of water, the sum of the weight percentages of persulfide and chloride 0.01-0.5%. The TFT copper-molybdenum laminated film etchant composition etches the copper-molybdenum laminated film uniformly, has moderate etching rate and long service life.

The invention belongs to the technical field of chemical etching of metal materials, and specifically discloses an etching solution for a copper-molybdenum composite layer used in a TFT-LCD manufacturing process. The etching solution is composed of the following raw materials in weight percentage: 5%~25% hydrogen peroxide, 2%~4% chelating agent, 1%~2% regulator, 0.05%~0.5% stabilizer, 0.05% ~0.5% Corrosion Inhibitor A, 0.05%~0.5% Corrosion Inhibitor B, 0.5%~1% Multi-functional Additive and the rest ultrapure water. The etching solution for copper-molybdenum composite layer used in the TFT-LCD manufacturing process of the present invention has good etching properties. The content of copper ions in the etching solution can keep the etching angle at 35-50° from 1000 to 7000 ppm, CDloss at 0.80±0.20um, and the etching slope is straight Good hardness, no molybdenum residue, no undercut. It can replace imported products and has great industrial value.

The invention discloses a swing-type plasma restraining device which is arranged in a reaction cavity of a plasma etching device and is characterized in that the swing-type plasma restraining device includes an annular support which is arranged at between the periphery of a static chuck and the cavity wall of the reaction cavity and a plurality of swing mechanisms arranged on the annular support. Plasmas in the reaction cavity are stirred by the plurality of groups of moving swing mechanisms so that vortexes are formed to clean the reaction cavity. Each group of swing mechanism includes blades and a rotating shaft which passes through the blades along the radial direction of the annular support, wherein one end of the rotating shaft is connected with one side of the annular support, close to the static chuck, and the other end of the rotating shaft is connected with one side of the annular support, close to the cavity wall; and the blades are capable of swinging or rotating on the rotating shaft. The swing-type plasma restraining device is capable of improving the reaction probability of the plasmas and polymers deposited on parts which are hard to clean so that the cleaning capability of the polymers on the parts which are hard to clean is improved.