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Copper-molybdenum lamination etchant for tft-lcd process

A technology of etching solution and copper-molybdenum, which is applied in the field of copper-molybdenum composite etching solution for TFT-LCD manufacturing process, can solve the problems of low service life of etching solution, unstable etching process, large fluctuation of pH value of etching solution, etc., and achieve long life, Etching process stabilization effect

Active Publication Date: 2022-05-20
武汉迪赛新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The etching solution uses sulfuric acid as a pH adjuster, and sulfuric acid is a strong ionized acid, which will cause the pH value of the etching solution to fluctuate greatly as the etching progresses, resulting in an unstable etching process and a low service life of the etching solution.

Method used

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  • Copper-molybdenum lamination etchant for tft-lcd process
  • Copper-molybdenum lamination etchant for tft-lcd process
  • Copper-molybdenum lamination etchant for tft-lcd process

Examples

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Embodiment 1

[0067] Embodiment 1 etching solution is respectively 1000ppm, 3000ppm, 5000ppm, 7000ppm when copper ion content is etched TFT substrate scanning electron microscope sectional view as Figure 1~4 . The top view of the scanning electron microscope of the TFT substrate etched by the etching solution of embodiment 1 when the copper ion content is 7000ppm is as Figure 5 .

[0068] The etchant etching situation of comparative example is as follows:

[0069] In the etching solution of Comparative Example 1 that does not contain a chelating agent, the etching angle of the etched TFT substrate is greater than 60°, and there is obvious molybdenum residue, and when the concentration of copper ions in the etching solution reaches 5000, the etching solution has already failed, and normal etching cannot be performed. .

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PUM

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Abstract

The invention belongs to the technical field of chemical etching of metal materials, and specifically discloses an etching solution for a copper-molybdenum composite layer used in a TFT-LCD manufacturing process. The etching solution is composed of the following raw materials in weight percentage: 5%~25% hydrogen peroxide, 2%~4% chelating agent, 1%~2% regulator, 0.05%~0.5% stabilizer, 0.05% ~0.5% Corrosion Inhibitor A, 0.05%~0.5% Corrosion Inhibitor B, 0.5%~1% Multi-functional Additive and the rest ultrapure water. The etching solution for copper-molybdenum composite layer used in the TFT-LCD manufacturing process of the present invention has good etching properties. The content of copper ions in the etching solution can keep the etching angle at 35-50° from 1000 to 7000 ppm, CDloss at 0.80±0.20um, and the etching slope is straight Good hardness, no molybdenum residue, no undercut. It can replace imported products and has great industrial value.

Description

technical field [0001] The invention belongs to the technical field of chemical etching of metal materials, and in particular relates to a copper-molybdenum composite layer etching solution for TFT-LCD manufacturing process. Background technique [0002] The liquid crystal display includes a liquid crystal display panel and a backlight module, and the liquid crystal display panel includes a CF substrate, a TFT array substrate, and a liquid crystal material between the CF substrate and the TFT substrate. By supplying power to the TFT substrate or not, the direction of the liquid crystal molecules is controlled, and the light from the backlight module is projected onto the CF substrate to generate a picture. [0003] The liquid crystal panel is the heart of the liquid crystal display, accounting for more than 80% of the cost of the entire product, and its quality will directly affect the display's color, brightness, contrast, viewing angle and other functional parameters. To ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18C23F1/26H01L21/77H01L27/12
CPCC23F1/18C23F1/26H01L27/1259H01L21/77H01L27/124H01L2021/775
Inventor 郭文勇邹玲詹洪张诗杨罗晓锋陆飚
Owner 武汉迪赛新材料有限公司
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