Filming method of silicon wafer after IMD CMP

Abstract

This invention discloses a silicon IMD CMP film process method, which reduces the production circle and flats the isolation layer oxygen film between the silicon metal align wires and improves the integration quality. The key points of this technique lies in the following: to automatically choose relative PCO film forming conditions according to the thickness of the remain film of silicon pad IMD and CMP.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process method, in particular to a silicon chip IMD film forming method after CMP. Background technique [0002] With the continuous improvement of semiconductor manufacturing technology, multi-layer wiring technology has emerged, which makes the device size and line width shrink continuously, and greatly improves the integration of semiconductor devices. However, the emergence of multi-layer wiring has led to large step differences and unevenness on the surface of the silicon wafer, resulting in poor metal wiring and difficulties in focusing in subsequent lithography. To solve this problem, the CMP (Chemical Mechanical Planarization) process was introduced. It uses chemical reaction and mechanical grinding and polishing to make the unevenness on the surface of the silicon wafer tend to be flattened, and the IMD CMP (chemical mechanical planarization of intermetallic dielectric layer) process uses...

AI Technical Summary

Problems solved by technology

In the IMD CMP process, due to the large fluctuations in the grinding rate of the CMP equipment, and the difference between the working chambers of the equipment that grows the IMD before the CMP, the residual film after the CMP process often exceeds the specification, and the traditional process is adopted after the CMP process. The fixed PCO (growth oxide film) growth conditions make it necessary to correct the thickness of the residual film to within the specification range through rework, so as to ensure the stability of the subsequent VIA (contact hole) etching thickness

This not only prolongs the production cycle of the product, but also increases the load rate of CMP equipment and PCO equipment