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Etching solution composition and etching method for copper-molybdenum film layers

A composition and etching solution technology, applied in the field of display, can solve problems such as unfavorable health of operators, affect the reliability of display panels, high waste liquid treatment cost, etc., and achieve the effects of stable etching process, reduced cost and moderate etching rate

Inactive Publication Date: 2020-04-28
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The currently popular copper / molybdenum etching solutions on the market basically contain fluoride. On the one hand, it is not conducive to the health of operators. On the other hand, due to its strong corrosion ability, it often causes corrosion of the glass substrate. This will affect the reliability of the display panel, and there will be a large amount of fluoride in the wastewater generated by etching, resulting in higher waste liquid treatment costs

Method used

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  • Etching solution composition and etching method for copper-molybdenum film layers
  • Etching solution composition and etching method for copper-molybdenum film layers

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Embodiment 1

[0039] An etching solution composition, comprising the following components by weight percentage: hydrogen peroxide 5.3wt%, N-phenylurea 0.8wt%, tartaric acid 8wt%, isopropanolamine 6.5wt%, diammonium hydrogen phosphate 0.4 wt %, deionized water 79 wt %, the pH of the etching solution composition is 4.9.

Embodiment 2

[0041] An etching solution composition, comprising the following components by weight percentage: hydrogen peroxide 8.6wt%, N,N'-diphenylurea 0.8wt%, benzoic acid 5.5wt%, triisopropanolamine 5wt% %, ammonium phosphate 0.4 wt %, phosphoric acid 1.2 wt %, deionized water 78.1 wt %, and the pH of the etching solution composition was 4.9.

[0042] In order to verify the etching effect of the etching solution composition provided by the above-mentioned embodiment, the following operations are performed:

[0043] A layer of copper-molybdenum laminate film is formed on the substrate, specifically, a molybdenum film layer of 300 angstroms is formed on the substrate, and a copper film layer of 7000 angstroms is formed on the molybdenum film layer, and then the copper-molybdenum laminate film is formed on the substrate. A layer of photoresist is coated on the layer, the photoresist is exposed and developed to form a specific shape, and then the etching solution composition provided in t...

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Abstract

The invention discloses an etching solution composition and an etching method for copper-molybdenum film layers. The etching solution composition comprises hydrogen peroxide, a hydrogen peroxide stabilizer, an etching additive, a pH regulator and deionized water. The etching solution composition does not contain fluoride, so that the etching solution composition is friendly to production line operators and the environment, and the waste etching solution treatment cost is greatly reduced; and meanwhile, the etching requirements of current conventional copper / molybdenum film layers can be met, and the etching process is stable.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an etching solution composition and an etching method for a copper-molybdenum film layer. Background technique [0002] In the current high-generation thin film transistor-liquid crystal display production process, the thin film transistor is most commonly used as an amorphous silicon thin film transistor. In this kind of thin film transistor, if the resistance of the metal wiring is too high, the RC-Delay effect is likely to occur, which has a greater impact on the display effect, thereby affecting the panel display effect. To meet the wiring requirements of large-size panels, the copper / molybdenum film layer has become the main gate, source and drain metal layer structure of this type of thin-film transistor. Therefore, the development of the corresponding etching solution is also particularly important. [0003] In the current popular copper / molybdenum etching solu...

Claims

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Application Information

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IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/26
Inventor 吴豪旭
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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