Etching solution for IGZO film and etching method thereof

Abstract

The invention provides an etching solution for an IGZO (Indium Gallium Zinc Oxide) film and an etching method thereof. The etching solution for the IGZO film comprises an acid, a phosphate, hydrogen peroxide and water, and the pH value of the etching solution is not more than 5. By adopting the etching solution, the etching rate can be effectively controlled, so that the etching rate is uniform; the IGZO film can be etched stably, and some impuritiesaffecting the electrical properties of the IGZO are not introduced at the same time, so that the stability of an IGZO-TFT (Thin Film Transistor) device can be effectively improved. The etching method for the IGZO film adopts the etching solution for the IGZO film. By adopting the etching method, the etching rate can be effectively controlled, so that the etching rate is uniform; the IGZO film can be etched stably, and some impuritiesaffecting the electrical properties of the IGZO are not introduced at the same time, so that the stability ofan IGZO-TFT device can be effectively improved.

Description

technical field [0001] The invention relates to the production field of display panels, in particular to an etching solution for an IGZO film layer and an etching method thereof. Background technique [0002] With the development of display technology, liquid crystal displays are gradually developing in the direction of large size and high resolution, which means that the charging time for pixels is getting shorter and shorter, and the key to charging pixels is the display screen thin film transistor (Thin Film Transistor, TFT). The characteristics of the TFT are largely determined by the properties of the active layer. Traditional TFT devices usually use amorphous silicon (a-Si, AS) as the active layer. Due to the long-term development of AS-TFT devices, the device characteristics are stable, but the mobility of AS is low. Under the development trend of high resolution and high refresh rate, the original advantages are gradually lost. Another semiconductor material, Indi...

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Problems solved by technology

[0003] However, the stability of the current IGZO-TFT device needs to be improved. The IGZO active layer is very sensitive to the process and environment, and is easily affected by light, temperature, etc. At the same time, it is also greatly affected by the process, such as the Q -time (the time difference from the completion of the IGZO process to the next station), in the IGZO process, it is particularly affected by the IGZO etching solution, such as the etching uniformity of the etching solution itself, whether the etching solution will introduce some conductive impurities, etc., which greatly affect The stability of the IGZO-TFT device is affected, such as causing IGZO Vth (turn-on voltage) drift or abnormal leakage current, etc.

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