Etching composition
A composition and etching technology, applied in the direction of clamping, supporting, positioning device, etc., can solve the problems of unstable ferric chloride, easy to be decomposed by hydrochloric acid, and the influence of Mo series
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Embodiment 1
[0039] 12% by mass of hydrochloric acid, 3% by mass of acetic acid, 0.1% by mass of NH as additives 4 NO 3 and the rest of the ultrapure water were evenly mixed to produce an etching composition.
Embodiment 2~4 and comparative example 1~4
[0041] An etching composition was produced in the same manner as in Example 1 except that the composition was shown in Table 1 below.
[0042] Form a transparent conductive film (ITO film) by sputtering on a glass substrate, coat a photoresist and develop it, and fix the etching compositions of the above-mentioned Examples 1 to 4 and Comparative Examples 1 to 4 at 45° C. After the patterned test piece was dipped for 90 seconds, the measured etching performance results are shown in Table 1 below. The unit in Table 1 is % by weight.
[0043] Classification
[0044] It can be seen from Table 1 that, compared with Comparative Examples 1-4, the descum removal efficiency of the etching compositions in Examples 1-4 produced by the present invention is better.
Embodiment 5~13
[0046] As shown in Table 2 below, when 15% by mass of hydrochloric acid, 5% by mass of acetic acid, and 1.0% by mass of NH 4 NO 3 In the etching composition composed of the remaining amount of ultrapure water, ammonium perfluorooctane sulfonate is used as a fluorine-based anionic surfactant, and 0ppm, 50ppm, 100ppm, 300ppm, 500ppm, and 1000ppm are added respectively, and uniformly mixed to form an etching composition thing. The unit in Table 2 is % by weight.
[0047] Classification
Example
5
6
7
8
9
10
11
12
13
hydrochloric acid
15
15
15
15
15
15
15
15
15
5
5
5
5
5
5
5
5
5
Additives (NH 4 NO 3 )
1
1
1
1
1
1
1
1
1
Surfactant
0ppm
10ppm
30ppm
50ppm
70ppm
100ppm
300ppm
500ppm
1000ppm
Ultra-pure water
Add to 100% by mass
...
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