Copper-aluminum film etching solution

Abstract

The embodiment of the invention discloses a copper-aluminum film etching solution. The copper-aluminum film etching solution comprises the following components in percentage by weight relative to the total weight of the etching solution: 4%-10% of hydrogen peroxide, 0.1%-1% of a hydrogen peroxide stabilizer, 0.05%-0.5% of an etching inhibitor, 10%-30% of a chelating agent, 0.2%-2% of a surfactant, 0.2%-5% of inorganic phosphate or inorganic hydrophosphate, 0.1%-5% of inorganic acid, 0-0.05% of fluoride and the balance of deionized water. The etching solution provided by the invention has relatively long service life.

Description

technical field [0001] The present application relates to the technical field of etching solution, in particular to a copper-aluminum film etching solution. Background technique [0002] At present, amorphous silicon thin film transistor products are commonly used in the high-generation thin film transistor liquid crystal display (TFT-LCD) production process, and copper, aluminum and their alloys are developed and applied due to their low cost. The copper / aluminum film layer has become the main gate (Gate) and source / drain (Source / Drain) metal layer structure of TFT-LCD, and the development of related etching solutions is also particularly important. [0003] Most of the existing copper and aluminum film etching solutions use hydrogen peroxide system to oxidize copper and aluminum through hydrogen peroxide, and then generate copper ions and aluminum ions under the action of acid to finally achieve the purpose of etching, but the decomposition of copper ions to hydrogen perox...

AI Technical Summary

Problems solved by technology

[0003]Most of the existing copper and aluminum film etching solutions use hydrogen peroxide system to oxidize copper and aluminum through hydrogen peroxide, and then generate copper ions and aluminum ions under the action of acid. Ultimately achieve the purpose of etching, but copper ions have a catalytic effect on the decomposition of hydrogen peroxide. When the concentration of copper ions dissolved in the etching solution exceeds 0.005 grams per milliliter (5000ppm, ppm is parts per million) during the etching process, the over Hydrogen oxide will be violently decomposed, resulting in boiling and explosion and reduced etching efficiency, prematurely reaching the service life of the etching solution, and requiring frequent replacement of new etching solution

Images