38results about How to "Consistent etch rate" patented technology

The invention relates to a method for manufacturing a holographic double blazed grating. The two blaze angles of the holographic double blazed grating are A blaze angle and B blaze angle respectively. The homogeneous grating is used as a mask for oblique ion beam etching to achieve different control of the two blaze angles, avoiding the secondary photoresist lithography process. Since the time of forward ion beam etching can be controlled when making the homogeneous grating, the groove depth of the homogeneous grating can be precisely controlled. In addition, since the homogeneous grating mask and the substrate are formed of the same material, the etching time of the two The eclipse rate remains consistent throughout, allowing precise control of the blaze angle.

The invention discloses a 3D NAND storage and a forming method thereof. The forming method of the 3D NAND storage has the steps of forming an intermediate isolation layer between a first stacking structure and a second stacking structure; and sequentially etching the second stacking structure, the intermediate isolation layer and the first stacking structure, wherein when grid partition slots arein the second stacking structure, the middle isolation layer and the first stacking structure, by using the intermediate isolation layer, the etching speed for etching the intermediate isolation layeris consistent with that for etching the first stacking structure, and the etching speed for etching the second stacking structure is consistent with that for etching the first stacking structure, sothat the bending defect of the side wall of the grid partition slots caused when the speed for etching the intermediate insulating layer is different from the etching speeds for etching the first stacking structure and the second stacking structure can be avoided.

The invention discloses a bearing device and a pre-cleaning cavity chamber. The bearing device is used for bearing a top plate of a workpiece to be processed, wherein the top plate comprises a central piece and an annular piece, the annular piece encircles the central piece, the central piece and the annular piece are isolated with each other, and the etching ratios of the workpiece to be processed at different positions in a radial direction tend to be consistent by respectively loading different negative biases to the central piece and the annular piece. In the bearing device, different negative biases are loaded to the central piece and the annular piece, so that the plasma density distribution of the workpiece to be processed which is borne on the bearing device is uniform, the etching ratios of the workpiece to be processed at different positions in the radial direction tend to the consistent, and the etching uniformity of the workpiece to be processed is improved.

The invention discloses a target back plate for magnetron sputtering and a magnetron sputtering device, relates to the technical field of magnetron sputtering, and aims to increase the utilization rate of a target material and improve the uniformity of the thickness of a film formed on a substrate to be coated. According to the target back plate for magnetron sputtering, a cooling fluid channel is formed inside the target back plate, a plurality of magnets are arranged on the back side of the target back plate, magnetic conductive pieces are arranged inside the cooling liquid channel in the target back plate; and the magnetic conductive pieces correspond to magnetic fields with the strongest magnetic intensity generated by the magnetic conductive pieces and the plurality of magnets. The target back plate for magnetron sputtering and the magnetron sputtering device, which are disclosed by the invention, are applied to planar film coating.

The invention provides a semiconductor device forming method. The method comprises steps: a substrate with a first area and a second area is provided, a first pseudo gate is formed on part of the substrate in the first area, a second metal gate is formed on part of the substrate in the second area, an interlayer dielectric layer is also formed on the surface of the substrate in the first area and in the second area, and the interlayer dielectric layer coats the side wall surface of the first pseudo gate and the side wall surface of the second metal gate; a synchronous pulse etching process is adopted to etch and remove the first pseudo gate, and a first opening is formed in the interlayer dielectric layer in the first area; a synchronous pulse method is adopted to carry out etching post-treatment on the first opening, and the treatment gas for the etching post-treatment comprises a carbon tetrafluoride gas; and a first metal gate filling the first opening is formed. The etched and removed thickness of the interlayer dielectric layer is small, the etched and removed thicknesses of the interlayer dielectric layer in a graph sparse area and a graph intensive area are consistent, and the electrical performance of the semiconductor device is thus improved.

The invention provides a plasma etching method, a device thereof and a specific method applying the device to carry out plasma etching on diffusion barrier layers, wherein the plasma etching method includes the following steps: an outer electrode collar and an inner electrode collar are concentrically arranged in an etching chamber; a semiconductor wafer to be etched is arranged on the bottoms of the outer electrode collar and the inner electrode collar, and the center of the semiconductor wafer is superposed with the circle center of the outer electrode collar and the inner electrode collar; etching gas is filled into the etching chamber; the outer electrode collar and the inner electrode collar are electrified, and the current directions of the outer electrode collar and the inner electrode collar are opposite. The invention ensures that the distribution of the plasma gas of the surface of the semiconductor wafer is uniform and the etching rate at each position is equal, thus improving the thickness consistency of each diffusion barrier layer at each position on the semiconductor wafer.

The invention belongs to the technical field of chemical preparations, and relates to an aluminum etching agent and a preparation method thereof. The formula of the aluminum etching agent comprises the following components in percentages by weight: 70-78% of phosphoric acid, 5-6% of nitric acid, 6-10% of acetic acid, 1-5% of sulfamic acid, and the balance of water. The aluminum etching liquid provided by the invention can convert a metal compound into soluble salts which are dissolved in water, speeds of etching to different metals are consistent basically, reaction is stable, the circumstance that etching efficiency and neatness of the surface of a substrate are affected by precipitate attachment is avoided, and surface dirt is removed conveniently.

The invention provides a method for forming a fin portion and a method for forming a fin field effect transistor. The method for forming the fin portion comprises the following steps: providing a semiconductor substrate, wherein the surface of the semiconductor substrate is provided with an insulation layer and a first fin portion, the first fin portion runs through the insulation layer, and the height of the insulation layer is lower than that of the first fin portion; forming a plasma doping layer on the surface of the first fin portion, wherein the plasma doping layer is a uniform amorphous phase layer; and etching the plasma doping layer and forming a second fin portion, wherein the dimension of the second fin portion is smaller than that of the first fin portion. Through adopting the technical scheme in the invention, the dimension of the fin portion of the fin field effect transistor can be further thinned, and thus the high-performance fin field effect transistor is formed.

A method for manufacturing a gate structure, comprising: sequentially depositing a dielectric layer, a conductive layer, a barrier layer, and a patterned photoresist layer on a substrate; etching the barrier layer; removing the patterned photoresist The etchant layer: using the first etching gas to etch the upper surface of the conductive layer; using the second etching gas to etch the conductive layer and the dielectric layer. By respectively setting the etching rates of the etching gas on the conductive layer material and the metal layer material oxide on the conductive layer, a certain etching selectivity ratio of the etching gas to the conductive layer material and the metal layer material oxide can be obtained, and finally no Gate structure with root defects.

The invention relates to an etching device and an etching method. The etching device comprises a spray pipe and a liquid scrapping device, wherein the spray pipe is provided with a plurality of spray heads; the plurality of spray heads are used for spraying etching liquid to a surface to be etched of a circuit substrate; and the liquid scrapping device is used for scrapping the etching liquid deposited in a center area of the surface to be etched out of the surface to be etched in a sliding mode. The etching method comprises the following steps of: using the plurality of spray heads arranged on the spray pipe to spray the etching liquid towards the surface to be etched of the circuit substrate; and using the liquid scrapping device to scrap the etching liquid deposited in the center area of the surface to be etched out of the surface to be etched in a sliding mode. The etching method can avoid generating water pit effect.

The invention discloses a novel acidic molybdenum aluminum molybdenum etching liquid and its preparation process. The novel acidic molybdenum aluminum molybdenum etching liquid comprises phosphoric acid, acetic acid, nitric acid, metal nitrate, a cationic surfactant and pure water. The preparation process of the etching liquid includes: maintaining the rotation speed of an ingredient tank stirrer, adding the phosphoric acid, the acetic acid, the nitric acid, potassium nitrate, the pure water and the cationic surfactant sequentially into the ingredient tank, fully stirring them, then introducing the mixture into a filter to conduct filtration, thus obtaining the molybdenum aluminum molybdenum etching liquid. The molybdenum aluminum molybdenum etching liquid provided in the invention has a small particle size and high purity, has a basically consistent etching rate on different metals, and is stable in reaction. By adjusting the nitric acid concentration, the etching speed can be controllable. The substrate etched by the etching liquid has a clean and tidy surface, no residue, and no intermetallic layering phenomenon. The remaining lines are smooth, and the etching angle is maintained at 40-60 degrees.