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A kind of acidic molybdenum aluminum molybdenum etching solution and preparation technology thereof

A preparation process and etching solution technology, which is applied in the field of acid molybdenum aluminum molybdenum etching solution and its preparation process, can solve the problem of affecting product yield, difficulty in controlling the etching angle and etching amount of different metal layers, affecting the image accuracy of high-density thin wires and Quality and other issues, to achieve the effect of stable response, smooth lines and clean surface

Active Publication Date: 2016-01-20
JIANGYIN RUNMA ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of etching molybdenum-aluminum-molybdenum materials with reagents, it is often difficult to control the etching angle and the etching amount of different metal layers, which affects the yield of products
[0003] In recent years, while people's demand for liquid crystal displays has been increasing, higher requirements have been placed on product quality and screen accuracy, and the effect of etching can directly lead to the quality of the circuit board manufacturing process and affect the quality of high-density thin wires. Image Accuracy and Quality

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Composition and preparation of acid molybdenum aluminum molybdenum etching solution

[0026] The acidic molybdenum-aluminum-molybdenum etching solution comprises phosphoric acid, acetic acid, nitric acid, cationic surfactant, metal nitrate and pure water, and the raw material weight percentages of the said molybdenum-aluminum-molybdenum etching solution are respectively: phosphoric acid 60%, acetic acid 8%, nitric acid 7% , metal nitrate 1%, cationic surfactant 0.5%, and the rest is pure water.

[0027] Wherein, the metal nitrate is potassium nitrate, and the purity of the potassium nitrate is higher than 99.5%.

[0028] Wherein, the concentrations of phosphoric acid, acetic acid and nitric acid are respectively: phosphoric acid 84%, acetic acid 99.5%, nitric acid 68%.

[0029] Wherein, the cationic surfactant is polyacrylamide.

[0030] Wherein, in the molybdenum-aluminum-molybdenum etching solution, there are 800 particles with a particle size greater than 0.3 μ...

Embodiment 2

[0047] The acidic molybdenum-aluminum-molybdenum etching solution comprises phosphoric acid, acetic acid, nitric acid, cationic surfactant, metal nitrate and pure water, and the raw material percentages by weight of the described molybdenum-aluminum-molybdenum etching solution are respectively: phosphoric acid 65%, acetic acid 11%, nitric acid 4% , metal nitrate 0.3%, cationic surfactant 0.1%, and the rest is pure water.

[0048] Wherein, the metal nitrate is potassium nitrate, and the purity of the potassium nitrate is higher than 99.5%.

[0049] Wherein, the concentrations of phosphoric acid, acetic acid and nitric acid are respectively: phosphoric acid 84%, acetic acid 99.5%, nitric acid 68%.

[0050] Wherein, the cationic surfactant is benzalkonium chloride.

[0051] Wherein, in the molybdenum-aluminum-molybdenum etching solution, there are 700 particles with a particle size greater than 0.3 μm per 1000 kg, impurity cations are 25 ppb, and impurity anions are 0.02 ppb.

...

Embodiment 3

[0055] The acidic molybdenum-aluminum-molybdenum etching solution comprises phosphoric acid, acetic acid, nitric acid, cationic surfactant, metal nitrate and pure water, and the raw material weight percentages of the said molybdenum-aluminum-molybdenum etching solution are respectively: phosphoric acid 70%, acetic acid 15%, nitric acid 1% , metal nitrate 0.1%, cationic surfactant 0.001%, and the rest is pure water.

[0056] Wherein, the metal nitrate is potassium nitrate, and the purity of the potassium nitrate is higher than 99.5%.

[0057] Wherein, the concentrations of phosphoric acid, acetic acid and nitric acid are respectively: phosphoric acid 84%, acetic acid 99.5%, nitric acid 68%.

[0058] Wherein, the cationic surfactant is benzalkonium bromide.

[0059] Wherein, in the molybdenum-aluminum-molybdenum etching solution, there are 500 particles with a particle size greater than 0.3 μm per 1000 kg, impurity cations are 20 ppb, and impurity anions are 0.03 ppb.

[0060] T...

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Abstract

The invention discloses a novel acidic molybdenum aluminum molybdenum etching liquid and its preparation process. The novel acidic molybdenum aluminum molybdenum etching liquid comprises phosphoric acid, acetic acid, nitric acid, metal nitrate, a cationic surfactant and pure water. The preparation process of the etching liquid includes: maintaining the rotation speed of an ingredient tank stirrer, adding the phosphoric acid, the acetic acid, the nitric acid, potassium nitrate, the pure water and the cationic surfactant sequentially into the ingredient tank, fully stirring them, then introducing the mixture into a filter to conduct filtration, thus obtaining the molybdenum aluminum molybdenum etching liquid. The molybdenum aluminum molybdenum etching liquid provided in the invention has a small particle size and high purity, has a basically consistent etching rate on different metals, and is stable in reaction. By adjusting the nitric acid concentration, the etching speed can be controllable. The substrate etched by the etching liquid has a clean and tidy surface, no residue, and no intermetallic layering phenomenon. The remaining lines are smooth, and the etching angle is maintained at 40-60 degrees.

Description

technical field [0001] The invention relates to a composition for chemical etching of metal materials and a preparation process thereof, in particular to an acidic molybdenum-aluminum-molybdenum etching solution and a preparation process. Background technique [0002] Etching is the technique of removing material using chemical reaction or physical impact. Etching technology is divided into wet etching and dry etching, wherein wet etching uses chemical reagents to achieve the purpose of etching through chemical reactions. Molybdenum-aluminum-molybdenum etching solution in the prior art is acidic, mainly made by phosphoric acid, nitric acid and acetic acid through stirring and mixing and filtering, and above-mentioned etching solution has been widely used in thin film field effect transistor liquid crystal display (TFT-LCD), light-emitting diode (LED ), organic light-emitting diode (OLED) and other industries are used in the etching of molybdenum layer and aluminum layer in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/26
Inventor 戈士勇沈翠芬盛建伟袁晓蕾
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
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