Plasma etching method, device thereof and plasma etching method for diffusion barrier layers
An etching device, plasma technology, applied in the direction of plasma, discharge tube, electrical components, etc., can solve the problems of reliability, inconsistent thickness of diffusion barrier layer, difference in resistance of metal interconnection structure, etc., to achieve consistent etching rate, Improved thickness uniformity, uniform plasma gas distribution
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[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0037] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.
[0038] As mentioned in the background technology section, due to the limitation of the plasma etching process in the prior art, the etching rate of the diffusion barrier layer on the surface of the wafer is different, resulting in inconsistent thickness of the diffusion barrier layer after thinning, which makes the subsequent fabrication There are large resistance differences throughout the metal interconnection structure, which affects th...
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