A kind of aluminum etchant and preparation method thereof

Abstract

The invention belongs to the technical field of chemical preparations, and relates to an aluminum etching agent and a preparation method thereof. The formula of the aluminum etching agent comprises the following components in percentages by weight: 70-78% of phosphoric acid, 5-6% of nitric acid, 6-10% of acetic acid, 1-5% of sulfamic acid, and the balance of water. The aluminum etching liquid provided by the invention can convert a metal compound into soluble salts which are dissolved in water, speeds of etching to different metals are consistent basically, reaction is stable, the circumstance that etching efficiency and neatness of the surface of a substrate are affected by precipitate attachment is avoided, and surface dirt is removed conveniently.

Description

technical field [0001] The invention relates to the technical field of chemical preparations, in particular to an aluminum etchant capable of high-speed and stable etching, smoothing and leaving no residue on the surface of a substrate and a preparation method thereof. Background technique [0002] The main feature of the development of microelectronics technology is to rely on the continuous reduction of the feature size of components, the increase of chip area, and the rapid development of integration and operation speed. Since the 1970s, the development speed of integrated circuit chips has basically followed the law of doubling the integration every 1.5 years, reducing the chip feature size by half every 3 years, increasing the chip area by about 1.5 times, and increasing the number of crystals in the chip by about 4 times. , that is, basically every three years a new generation of IC products comes out. The electronic grade aluminum etchant that is closely related to t...

AI Technical Summary

Problems solved by technology

However, the etchant in the prior art has a significant difference in the etching rate of different metals, resulting in side erosion, delamination between metals, and rough surfaces with residues.

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