The invention belongs to the field of photoelectric materials, and provides a preparation method of an ITO thin film. The preparation method of the ITO thin film comprises the following steps that an
indium source and a
tin source are dissolved to prepare an
indium source and
tin source mixture organic solution, stabilizers and surfactants are added for
ageing processing, and then ITO
sol is obtained; after one time of pulling
coating is conducted on the ITO solution on a base body, high-temperature preheating
processing is conducted, then annealing
processing is conducted, and the ITO thin film is obtained. The high-temperature preheating processing method comprises the step of preheating the base body coated with the ITO solution for 30 min in a
muffle furnace at the temperature of 400-600 DEG C in the
air atmosphere. According to the preparation method of the ITO thin film, the ITO thin film is prepared by the adoption of the
sol-gel dip-
coating technology. The preparation method is simple, the
doping amount is easy to control, the obtained ITO thin film is flat in surface and compact in particle, the
transmittance in the visible light region of the obtained ITO thin film reaches 90%, the electrical resistivity of the obtained ITO thin film reaches 4-10 levels, the power function of the obtained ITO thin film reaches 4.9 eV, and the requirement for thin film electrodes of solar cells can be met.