Disclosed is a rapid
energy transfer annealing (RETA) device and process, where an energy plate is used to rapidly absorb the primary photonic energy of the
light source, such as a
tungsten halogen lamp (or an
xenon Arc lamp), to allow
temperature elevation. The energy plate faces an amorphous thin film deposited above a glass or plastic substrate and releases the
heat energy transferred by a gas or
solid medium to the amorphous thin film,, so as to heat the amorphous thin film for transforming the amorphous thin film into a polycrystalline film. On another side of the glass or plastic substrate may be further provided with a
heat sink plate and a supporting plate. The
heat sink plate absorbs energy of the glass substrate, protects glass substrate from damages due to overheating. The
heat sink plate or the supporting plate may be moved to freely adjust distance between the amorphous thin film and the energy plate and that between the glass substrate and the heat sink plate, so as to control energy transferred to the amorphous thin film and energy released by the glass substrate transfer. The adjustment of distance may be fixed or varied as a function of time so as to randomly adjust the
energy transfer. Further, between the glass substrate and the amorphous film may be provided with a
heat conducting layer and a heat shielding layer. On another side of the glass substrate may be provided with a heat sink layer. On the amorphous thin film may be provided with a heat
absorption layer to control and allow selective
crystallization, or to control direction of
heat transfer thereby guiding the
crystallization to grow in a specific direction.