Germanium selenide polycrystal thin film and solar battery comprising thin film, and preparation methods therefor

A technology of solar cells and germanium selenide, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low content, toxic production process for human body, and complexity, and achieve short reaction cycle, excellent photovoltaic performance, and film-forming quality Good results

Active Publication Date: 2017-05-31
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the deficiencies in the prior art, one of the purposes of the present invention is to provide a high-quality germanium selenide polycrystalline film and its preparation method, the high-quality germanium selenide polycrystalline film solves the current problems Compound thin-film solar cells (CIGS, CdTe, CZTSSe) contain less elements in the earth’s crust, are toxic to the human body, or have complex production processes. Prepared

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  • Germanium selenide polycrystal thin film and solar battery comprising thin film, and preparation methods therefor
  • Germanium selenide polycrystal thin film and solar battery comprising thin film, and preparation methods therefor
  • Germanium selenide polycrystal thin film and solar battery comprising thin film, and preparation methods therefor

Examples

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Embodiment 1

[0060] A method for preparing a thin-film solar cell using a high-quality germanium selenide polycrystalline thin film as an absorbing layer, the specific steps comprising an n-type window layer deposition step, a p-type absorber layer deposition step and a back electrode layer deposition step:

[0061] a) n-type window layer deposition step: using a chemical bath deposition method to deposit an n-type window layer 12 on the conductive glass substrate 11;

[0062] The substrate 11 comprises transparent glass (or white glass) and transparent ITO (In 2 o 3 :Sn) coating (recorded as ITO conductive glass or ITO glass), the thickness is 1.1mm;

[0063] The substrate 11 (commercially available, coating thickness 220-230 angstroms, substrate (transparent glass) sheet resistance<7ohm / sq, light transmittance≥77%) was ultrasonically cleaned with deionized water, acetone and ethanol respectively 30 minutes, then blown with high-purity nitrogen, and then cleaned with UV-ozone for 15 min...

Embodiment 2

[0076] A kind of high-quality germanium selenide polycrystalline thin film is the preparation method of the thin-film solar cell of absorption layer, and concrete preparation method is basically the same as that in embodiment 1, and difference is:

[0077] In step b), the deposition program of the rapid annealing furnace is: C1:20, T1:30, C2:300, T2:1200, C3:300, T3:10, C4:400, T4:5, C5:400, T5:-121 (wherein, the unit of C is ℃, and the unit of T is second), then the germanium selenide polycrystalline thin film under different preheating temperatures can be obtained.

[0078] Figure 7 It is the X-ray powder diffraction pattern of the germanium selenide polycrystalline thin film prepared in Example 2 of the present invention on the ITO glass substrate.

[0079] Figure 8 It is a scanning electron microscope image of the polycrystalline germanium selenide thin film on an ITO glass substrate in Example 2 of the present invention.

[0080] The germanium selenide polycrystallin...

Embodiment 3

[0082] A kind of high-quality germanium selenide polycrystalline thin film is the preparation method of the thin-film solar cell of absorption layer, and concrete preparation method is basically the same as that in embodiment 1, and difference is:

[0083] In step b), the deposition program of the rapid annealing furnace is: C1:20, T1:30, C2:350, T2:1200, C3:350, T3:10, C4:450, T4:5, C5:450, T5:-121 (wherein, the unit of C is ℃, and the unit of T is second), and germanium selenide polycrystalline thin films at different sublimation temperatures can be obtained.

[0084] Figure 10 It is the X-ray powder diffraction spectrum of the germanium selenide polycrystalline thin film prepared in Example 3 of the present invention on an ITO glass substrate.

[0085] Figure 11 It is a scanning electron microscope image of the polycrystalline germanium selenide thin film on an ITO glass substrate in Example 3 of the present invention.

[0086] Through the germanium selenide polycrysta...

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Abstract

The invention discloses a high-quality germanium selenide polycrystal thin film and a preparation method therefor, a solar battery comprising the germanium selenide polycrystal thin film and a preparation method therefor. The germanium selenide polycrystal thin film is 300-500nm in thickness; the preparation method adopts a closed space sublimation method; the preparation method is simple in process, short in reaction period and high in film forming quality; elements included in p type absorption layer material GeSe in the solar battery are all elements with relatively high content in the earth crust, so that the elements are rich in resource, free of toxins and environment friendly; the indirect energy gap is 1.12eV, the absorption edge wavelength is about 1,000nm, response to solar spectrum is in the most ideal solar spectrum band, and the light absorption coefficient is as high as 105cm<-1>; meanwhile, based on the sublimation characteristic of the thin film, the film can be formed rapidly based on the closed space sublimation method; and therefore, the formed compound thin film solar battery has excellent photovoltaic performance, environment protection and is expected to realize low-cost production.

Description

technical field [0001] The invention belongs to the field of photoelectric materials and thin-film solar cell preparation, and in particular relates to a high-quality polycrystalline germanium selenide film, a solar cell containing the film and a preparation method thereof. Background technique [0002] Solar cells are an effective device that converts solar energy into electrical energy. It can help humans efficiently convert and utilize solar energy. Among them, thin-film solar cells have attracted widespread attention due to their excellent performance. Most of the compound semiconductor materials used in solar cells contain rare metals or toxic metal elements, which largely affects the development of solar cells. For example, the currently commercialized thin-film solar cells are mainly copper indium gallium selenide cells and cadmium telluride cells, but the In and Ga used in the preparation process of copper indium gallium selenide thin film solar cells are expensive m...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L29/24H01L31/0216C23C18/12
CPCC23C18/1204H01L21/0256H01L21/02595H01L21/02617H01L21/02623H01L29/24H01L31/02167Y02E10/50
Inventor 胡劲松何超薛丁江刘顺畅
Owner INST OF CHEM CHINESE ACAD OF SCI
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