43 results about "Germanium selenide" patented technology

An integrated programmable conductor memory cell and diode device in an integrated circuit comprises a diode and a glass electrolyte element, the glass electrolyte element having metal ions mixed or dissolved therein and being able to selectively form a conductive pathway under the influence of an applied voltage. In one embodiment, both the diode and the memory cell comprise a chalcogenide glass, such as germanium selenide (e.g., Ge2Se8 or Ge25Se75). The first diode element comprises a chalcogenide glass layer having a first conductivity type, the second diode element comprises a chalcogenide glass layer doped with an element such as bismuth and having a second conductivity type opposite to the first conductivity type and the memory cell comprises a chalcogenide glass element with silver ions therein. In another embodiment, the diode comprises silicon and there is a diffusion barrier layer between the diode and the chalcogenide glass memory element. Methods of fabricating integrated programmable conductor memory cell and diode devices are also disclosed.

The present invention is related to methods and apparatus to produce a memory cell or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell according to an embodiment of the present invention, silver selenide and a chalcogenide glass, such as germanium selenide (GexSe(1−x)) are combined in an active layer, which supports the formation of conductive pathways in the presence of an electric potential applied between electrodes. Advantageously, embodiments of the present invention can be fabricated with relatively wide ranges for the thicknesses of the silver selenide and glass layers.

A method of forming resistance changing elements with improved operational characteristics for use in memory devices and the resulting structures are disclosed. A chalcogenide glass having the formula (Gex1Se1-x1)1-y1Agy1, wherein 18≦x1≦28, or the formula (Gex2Se1-x2)1-y2Agy2, wherein 39≦x2≦42, and wherein in both the silver is in a concentration which maintains the germanium selenide glass in the glass forming region is used in a memory cell. The glass may also have a glass transition temperature (Tg) near or higher than typical temperatures used for fabricating and packaging memory devices containing the memory cell.

The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclosed PCRAM structure.

The present invention is related to methods of fabricating a resistance variable memory element and a device formed therefrom having improved switching characteristics. According to an embodiment of the present invention a resistance variable material memory element is annealed to remove stoichiometric amounts of a component of the resistance variable material. According to another embodiment of the present invention a silver-germanium-selenide glass is annealed for a duration of about 10 minutes in the presence of oxygen to drive off selenium and increase the rigidity of the glass.

An integrated programmable conductor memory cell and diode device in an integrated circuit comprises a diode and a glass electrolyte element, the glass electrolyte element having metal ions mixed or dissolved therein and being able to selectively form a conductive pathway under the influence of an applied voltage. In one embodiment, both the diode and the memory cell comprise a chalcogenide glass, such as germanium selenide (e.g., Ge2Se8 or Ge25Se75). The first diode element comprises a chalcogenide glass layer having a first conductivity type, the second diode element comprises a chalcogenide glass layer doped with an element such as bismuth and having a second conductivity type opposite to the first conductivity type and the memory cell comprises a chalcogenide glass element with silver ions therein. In another embodiment, the diode comprises silicon and there is a diffusion barrier layer between the diode and the chalcogenide glass memory element. Methods of fabricating integrated programmable conductor memory cell and diode devices are also disclosed.

The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

The invention discloses a high-quality germanium selenide polycrystal thin film and a preparation method therefor, a solar battery comprising the germanium selenide polycrystal thin film and a preparation method therefor. The germanium selenide polycrystal thin film is 300-500nm in thickness; the preparation method adopts a closed space sublimation method; the preparation method is simple in process, short in reaction period and high in film forming quality; elements included in p type absorption layer material GeSe in the solar battery are all elements with relatively high content in the earth crust, so that the elements are rich in resource, free of toxins and environment friendly; the indirect energy gap is 1.12eV, the absorption edge wavelength is about 1,000nm, response to solar spectrum is in the most ideal solar spectrum band, and the light absorption coefficient is as high as 105cm<-1>; meanwhile, based on the sublimation characteristic of the thin film, the film can be formed rapidly based on the closed space sublimation method; and therefore, the formed compound thin film solar battery has excellent photovoltaic performance, environment protection and is expected to realize low-cost production.

Systems and methods for large scale synthesis of germanium selenide glass and germanium selenide glass compounds are provided. Up to about 750 grams of a germanium selenide glass or a glass compound can be synthesized at a time in about eight hours or less. Stoichiometrically proportional amounts of germanium and selenium are placed in an ampoule. A variable may also be placed in the ampoule. The ampoule is heated to above the softening temperature of the glass or glass compound being synthesized. The ampoule is then rocked for a period of time while the temperature is held constant. The temperature of the ampoule is then brought down to above the softening temperature of the glass or glass compound being synthesized and then quenched.

The invention relates to the technical field of thin film preparation, in particular to a germanium selenide thin film and a preparation method thereof. The germanium selenide thin film is deposited on an ITO substrate through an electrochemical method. According to the preparation method of the germanium selenide thin film, the germanium selenide thin film is deposited on the conductive side faceof ITO, specifically, GeSe powder is put into an ethanol solution or an acetone solution, and thus a dark brown suspension is formed; and then, starch is added into centrifugal supernatant of the suspension, a power source is switched on, a reaction is conducted, and thus the germanium selenide thin film is obtained. By adopting the preparation method, simpleness is achieved, and the germanium selenide thin film capable of expanding germanium selenide application can be prepared.

The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

The invention discloses a germanium selenide based electronic device capable of decomposing water to produce hydrogen gas by means of sunlight, and a preparation method thereof. The device comprises asubstrate, a back electrode layer positioned on the substrate, a germanium selenide absorption layer positioned on the electrode layer, a buffer layer positioned on the germanium selenide absorptionlayer, a protection layer positioned on the buffer layer and metal nanoparticles attached to the protection layer, thereby realizing efficient decomposition of water to produce hydrogen gas under theapplied bias. By utilizing the characteristics of germanium selenide that an energy gap and a solar spectrum are very matched (1.15eV), the optical absorption coefficient is large, the raw material ischeap and nontoxic and the growth temperature is low, the germanium selenide is designed into an absorption layer material for the first time so as to be applied to the device capable of decomposingwater to produce hydrogen gas by means of sunlight, thereby preparing the germanium selenide based device capable of decomposing water to produce hydrogen gas by means of sunlight. The efficiency fordecomposing water to produce hydrogen gas under illumination by the device exceeds 1%.

A variable resistance memory device that includes a first electrode, a second electrode, and a first chalcogenide material layer between the first and second electrodes, the chalcogenide layer including carbon incorporated into germanium selenide chalcogenide glass. The variable resistance memory device may include a second chalcogenide material layer between the first chalcogenide material layer and the second electrode. The variable resistance memory device may include a first metallic layer between the second chalcogenide material layer and the second electrode. The variable resistance memory device may include a third chalcogenide material layer between the first metallic layer and the second electrode. The variable resistance memory device may include a fourth chalcogenide material layer between the first chalcogenide material layer and the first electrode. The first chalcogenide layer may be formed by co-sputtering carbon with Ge40Se60.

The invention discloses a preparation method of a germanium diselenide nano material. Based on a chemical vapor deposition method, the controllable growth of the germanium diselenide nano material canbe realized by adjusting the carrier gas flow and the spatial placement position of the growth substrate. After the chemical deposition system is heated to a specified temperature, germanium selenidehigh-purity powder is rapidly pushed to a heating center, and a reaction precursor is transported to a low-temperature area by a carrier gas; germanium diselenide nano-materials (nanobelts and nano-films) with adjustable shapes, sizes and thicknesses can be obtained by placing the reaction precursor on substrates at different spatial positions in the low-temperature area; and according to the experimental method provided by the invention, industrial production of the germanium diselenide nanostructure can be realized.

The invention relates to the technical field of photoelectric materials, and relates to a powder material, in particular to a method for preparing selenium germanium powder. The selenium germanium powder is prepared by mixing germanium powder and selenium powder evenly, then conducting heating and maintaining the temperature under vacuum conditions, and crushing under the protection of argon. The selenium germanium powder is prepared by a diffusion reaction between germanium and selenium at high temperature under vacuum. The problem that the reaction of the germanium and the selenium for preparation of germanium selenide is difficult to control is solved, and the high-purity selenium germanium powder is obtained by the preparation. The technological method is simple, raw materials are easy to obtain, energy consumption is low and mass production is facilitated.

The invention provides a method for preparing an imaging element based on a two-dimensional germanium selenide photodetector, and belongs to the technical field of two-dimensional semiconductor imaging. The method comprises a step of preparing a two-dimensional germanium selenide single crystal, a step of peeling the two-dimensional germanium selenide single crystal into a two-dimensional germanium selenide nanosheet and transferring to a silicon wafer substrate having a silicon dioxide oxide layer to obtain a thin layer of two-dimensional selenide nano-sheets, and a step of making the two-dimensional germanium selenide nanosheet thin layer into a two-dimensional germanium selenide two-end device and obtaining an imaging element based on a two-dimensional germanium selenide photodetector,wherein the two-dimensional germanium selenide two-end device is the two-dimensional germanium selenide photodetector. According to the method, by making the two-dimensional germanium selenide nanosheet into the two-dimensional germanium selenide two-end device, an original charge-coupled component is substituted, and the effects of small size and the facilitation of processing and integration canbe achieved.

The invention relates to a device and method for growing a high-quality uniform germanium selenide film. In a tubular quartz furnace, by using a physical vapor transport method, the uniform germanium selenide film is grown on each of various substrates by vertically placing the substrates, adjusting the growth temperature (400-600 DEG C) and using GeSe as a growth source. The prepared material is uniform in component, and the film thickness uniformity is greater than 10%. The method is simple to operate and low in cost. An absorption spectrum of the prepared germanium selenide film in a visible light region is closely related to the thickness of the film. The device and the method can be used for preparing a germanium selenide coating, a glass film and a thermoelectric film of an ultra-thin optoelectronic device.

A method of forming a non-volatile resistance variable device includes forming a patterned mass comprising elemental silver over a substrate. A layer comprising elemental selenium is formed over the substrate and including the patterned mass comprising elemental silver. The substrate is exposed to conditions effective to react only some of the elemental selenium with the elemental silver to form the patterned mass to comprise silver selenide. Unreacted elemental selenium is removed from the substrate. A first conductive electrode is provided in electrical connection with one portion of the patterned mass comprising silver selenide. A germanium selenide comprising material is provided in electrical connection with another portion of the patterned mass comprising silver selenide. A second conductive electrode is provided in electrical connection with the germanium selenide comprising material.

An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

The invention discloses preparation of germanium selenide two-dimensional materials on the basis of solvent thermal intercalation processes. The preparation includes steps of (1), placing germanium selenide powder in reaction kettles, adding solvents into the reaction kettles, increasing the temperatures until the temperatures reach 100-200 DEG C and preserving heat for 8-48 h; (2), placing germanium selenide dispersion liquid, which is obtained after the solvents are heated at the step (1), in cell disruption machines and carrying out ultrasonic treatment; (3), carrying out centrifugal treatment on the germanium selenide dispersion liquid after the ultrasonic treatment is carried out on the germanium selenide dispersion liquid so as to obtain black gray supernatant liquid. Single-layer orfew-layer germanium selenide is dispersed in the black gray supernatant liquid. The preparation has the advantage that a method for preparing the germanium selenide two-dimensional materials is simple and feasible and is easy to operate.

The invention discloses a preparation method of a germanium selenide nano material and application of the germanium selenide nano material. The preparation method of the germanium selenide nano material comprises the following steps of: mixing GeI4 and oleylamine, and sequentially carrying out magnetic stirring, vacuumizing, heating and heat preservation; and injecting selenourea into the mixture of GeI4 and oleylamine, refluxing the reaction mixture at a high temperature in an inert gas environment, cooling to room temperature, washing with acetone, alcohol and deionized water in sequence, and drying to obtain germanium selenide nanoparticles. According to the preparation method of the germanium selenide nano material, selenourea and GeI4 are subjected to a redox reaction in an oleylamine solvent at a high temperature to synthesize germanium selenide nano particles, the germanium selenide nano particles are cooled to room temperature, washed with acetone, alcohol and deionized water and dried to obtain the germanium selenide nano particle material, and the whole preparation method is simple to operate, environment-friendly, pollution-free and easy for industrial production. The germanium selenide nano material disclosed by the invention is applied to degradation of organic pollutants.

The invention belongs to the field of novel polarization optical devices, and particularly relates to a polarization phase modulator based on two-dimensional germanium selenide and a design method of the modulator. The design method comprises the following steps of: firstly, manufacturing a plurality of two-dimensional GeSe with different thicknesses, attaching the two-dimensional GeSe to a substrate, acquiring in-plane optical constants of the two-dimensional GeSe, calculating phase retardations corresponding to different thicknesses by combining a phase retardation calculation formula, calculating the phase retardations according to the requirements of a target polarization phase modulator on the phase retardations, determining the thickness of the two-dimensional GeSe in the target polarization phase modulator, and finally checking whether the manufactured polarization phase modulator meets the requirement or not through comparison of experimental measurement and calculation fitting. According to the method, the thickness nanocrystallization of the polarization phase modulator can be realized only through simple design, and the method has a very good application prospect.

The invention relates to the technical field of thin film preparation, in particular to a germanium selenide thin film and a preparation method thereof. The germanium selenide thin film is deposited on an ITO substrate through an electrochemical method. According to the preparation method of the germanium selenide thin film, the germanium selenide thin film is deposited on the conductive side faceof ITO, specifically, GeSe powder is put into an ethanol solution or an acetone solution, and thus a dark brown suspension is formed; and then, starch is added into centrifugal supernatant of the suspension, a power source is switched on, a reaction is conducted, and thus the germanium selenide thin film is obtained. By adopting the preparation method, simpleness is achieved, and the germanium selenide thin film capable of expanding germanium selenide application can be prepared.

An optically gated transistor (OGT) device that may be used as a selector device for one or more variable resistive memory devices. The OGT device isolates the one or more variable resistive memory devices when the OGT is not optically activated. The amount of current conducted by the OGT device is dependent on an intensity of light optically applied to the OGT device. The OGT device includes alternating layers of germanium selenide (GeSe) and GeSe plus an additional element deposited on a substrate. The OGT device includes only two electrodes connected to the alternating layers deposited on the substrate. The OGT device may generate an amplified electrical signal with respect to the magnitude of a received optical signal. The OGT device may be used to generate an optical signal having a different wavelength than the wavelength of a received optical signal.

The invention relates to the technical field of photoelectric material production, in particular to a germanium selenide target material and a preparation method thereof. The preparation method includes: A) heating the germanium block to 980-1050 DEG C, and keeping the temperature to obtain germanium liquid; B) heating the selenium block to 230-250 DEG C, after keeping the temperature, the selenium block is melted and dropped into the germanium solution , to obtain a mixed smelting solution; C) heating the mixed smelting solution at 980-1050° C. for 30-60 min, and after cooling, a selenium-germanium alloy is obtained; D) the selenium-germanium alloy is ball-milled, and the obtained selenium-germanium powder is Vacuum hot pressing sintering to obtain germanium selenide target; steps A), B) and C) are carried out under vacuum conditions. In the present invention, a selenium-germanium alloy is prepared by a vacuum dropping method, then a selenium-germanium powder is obtained by ball milling, and then a germanium selenide target is prepared by a vacuum hot pressing method. The selenium content varies little.

A thin-film transistor and a manufacturing method thereof are characterized in that: the active layer is a group IV-VI compound semiconductor film; the group IV-VI compound is one of geranium sulfide (GeS), germanium selenide (GeSe), germanium telluride (GeTe), tin selenide (SnSe), and tin telluride (SnTe) or a ternary, quaternary, or quinary compound thereof; the active layer is deposited by sputtering; and thermal annealing is performed after the active layer is deposited. The thin-film transistor has high carrier mobility and a high current on / off ratio and therefore meets the needs of high-resolution display development.