43 results about "Germanium selenide" patented technology

An integrated programmable conductor memory cell and diode device in an integrated circuit comprises a diode and a glass electrolyte element, the glass electrolyte element having metal ions mixed or dissolved therein and being able to selectively form a conductive pathway under the influence of an applied voltage. In one embodiment, both the diode and the memory cell comprise a chalcogenide glass, such as germanium selenide (e.g., Ge₂Se₈ or Ge₂₅Se₇₅). The first diode element comprises a chalcogenide glass layer having a first conductivity type, the second diode element comprises a chalcogenide glass layer doped with an element such as bismuth and having a second conductivity type opposite to the first conductivity type and the memory cell comprises a chalcogenide glass element with silver ions therein. In another embodiment, the diode comprises silicon and there is a diffusion barrier layer between the diode and the chalcogenide glass memory element. Methods of fabricating integrated programmable conductor memory cell and diode devices are also disclosed.

The present invention is related to methods and apparatus to produce a memory cell or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell according to an embodiment of the present invention, silver selenide and a chalcogenide glass, such as germanium selenide (Ge_xSe_(1−x)) are combined in an active layer, which supports the formation of conductive pathways in the presence of an electric potential applied between electrodes. Advantageously, embodiments of the present invention can be fabricated with relatively wide ranges for the thicknesses of the silver selenide and glass layers.

The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (Ge_xSe_1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

Systems and methods for large scale synthesis of germanium selenide glass and germanium selenide glass compounds are provided. Up to about 750 grams of a germanium selenide glass or a glass compound can be synthesized at a time in about eight hours or less. Stoichiometrically proportional amounts of germanium and selenium are placed in an ampoule. A variable may also be placed in the ampoule. The ampoule is heated to above the softening temperature of the glass or glass compound being synthesized. The ampoule is then rocked for a period of time while the temperature is held constant. The temperature of the ampoule is then brought down to above the softening temperature of the glass or glass compound being synthesized and then quenched.

The invention discloses a germanium selenide based electronic device capable of decomposing water to produce hydrogen gas by means of sunlight, and a preparation method thereof. The device comprises asubstrate, a back electrode layer positioned on the substrate, a germanium selenide absorption layer positioned on the electrode layer, a buffer layer positioned on the germanium selenide absorptionlayer, a protection layer positioned on the buffer layer and metal nanoparticles attached to the protection layer, thereby realizing efficient decomposition of water to produce hydrogen gas under theapplied bias. By utilizing the characteristics of germanium selenide that an energy gap and a solar spectrum are very matched (1.15eV), the optical absorption coefficient is large, the raw material ischeap and nontoxic and the growth temperature is low, the germanium selenide is designed into an absorption layer material for the first time so as to be applied to the device capable of decomposingwater to produce hydrogen gas by means of sunlight, thereby preparing the germanium selenide based device capable of decomposing water to produce hydrogen gas by means of sunlight. The efficiency fordecomposing water to produce hydrogen gas under illumination by the device exceeds 1%.

A variable resistance memory device that includes a first electrode, a second electrode, and a first chalcogenide material layer between the first and second electrodes, the chalcogenide layer including carbon incorporated into germanium selenide chalcogenide glass. The variable resistance memory device may include a second chalcogenide material layer between the first chalcogenide material layer and the second electrode. The variable resistance memory device may include a first metallic layer between the second chalcogenide material layer and the second electrode. The variable resistance memory device may include a third chalcogenide material layer between the first metallic layer and the second electrode. The variable resistance memory device may include a fourth chalcogenide material layer between the first chalcogenide material layer and the first electrode. The first chalcogenide layer may be formed by co-sputtering carbon with Ge₄₀Se₆₀.

The invention discloses a preparation method of a germanium diselenide nano material. Based on a chemical vapor deposition method, the controllable growth of the germanium diselenide nano material canbe realized by adjusting the carrier gas flow and the spatial placement position of the growth substrate. After the chemical deposition system is heated to a specified temperature, germanium selenidehigh-purity powder is rapidly pushed to a heating center, and a reaction precursor is transported to a low-temperature area by a carrier gas; germanium diselenide nano-materials (nanobelts and nano-films) with adjustable shapes, sizes and thicknesses can be obtained by placing the reaction precursor on substrates at different spatial positions in the low-temperature area; and according to the experimental method provided by the invention, industrial production of the germanium diselenide nanostructure can be realized.

The invention relates to the technical field of photoelectric materials, and relates to a powder material, in particular to a method for preparing selenium germanium powder. The selenium germanium powder is prepared by mixing germanium powder and selenium powder evenly, then conducting heating and maintaining the temperature under vacuum conditions, and crushing under the protection of argon. The selenium germanium powder is prepared by a diffusion reaction between germanium and selenium at high temperature under vacuum. The problem that the reaction of the germanium and the selenium for preparation of germanium selenide is difficult to control is solved, and the high-purity selenium germanium powder is obtained by the preparation. The technological method is simple, raw materials are easy to obtain, energy consumption is low and mass production is facilitated.

The invention provides a method for preparing an imaging element based on a two-dimensional germanium selenide photodetector, and belongs to the technical field of two-dimensional semiconductor imaging. The method comprises a step of preparing a two-dimensional germanium selenide single crystal, a step of peeling the two-dimensional germanium selenide single crystal into a two-dimensional germanium selenide nanosheet and transferring to a silicon wafer substrate having a silicon dioxide oxide layer to obtain a thin layer of two-dimensional selenide nano-sheets, and a step of making the two-dimensional germanium selenide nanosheet thin layer into a two-dimensional germanium selenide two-end device and obtaining an imaging element based on a two-dimensional germanium selenide photodetector,wherein the two-dimensional germanium selenide two-end device is the two-dimensional germanium selenide photodetector. According to the method, by making the two-dimensional germanium selenide nanosheet into the two-dimensional germanium selenide two-end device, an original charge-coupled component is substituted, and the effects of small size and the facilitation of processing and integration canbe achieved.

An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

The invention discloses a preparation method of a germanium selenide nano material and application of the germanium selenide nano material. The preparation method of the germanium selenide nano material comprises the following steps of: mixing GeI4 and oleylamine, and sequentially carrying out magnetic stirring, vacuumizing, heating and heat preservation; and injecting selenourea into the mixture of GeI4 and oleylamine, refluxing the reaction mixture at a high temperature in an inert gas environment, cooling to room temperature, washing with acetone, alcohol and deionized water in sequence, and drying to obtain germanium selenide nanoparticles. According to the preparation method of the germanium selenide nano material, selenourea and GeI4 are subjected to a redox reaction in an oleylamine solvent at a high temperature to synthesize germanium selenide nano particles, the germanium selenide nano particles are cooled to room temperature, washed with acetone, alcohol and deionized water and dried to obtain the germanium selenide nano particle material, and the whole preparation method is simple to operate, environment-friendly, pollution-free and easy for industrial production. The germanium selenide nano material disclosed by the invention is applied to degradation of organic pollutants.

The invention belongs to the field of novel polarization optical devices, and particularly relates to a polarization phase modulator based on two-dimensional germanium selenide and a design method of the modulator. The design method comprises the following steps of: firstly, manufacturing a plurality of two-dimensional GeSe with different thicknesses, attaching the two-dimensional GeSe to a substrate, acquiring in-plane optical constants of the two-dimensional GeSe, calculating phase retardations corresponding to different thicknesses by combining a phase retardation calculation formula, calculating the phase retardations according to the requirements of a target polarization phase modulator on the phase retardations, determining the thickness of the two-dimensional GeSe in the target polarization phase modulator, and finally checking whether the manufactured polarization phase modulator meets the requirement or not through comparison of experimental measurement and calculation fitting. According to the method, the thickness nanocrystallization of the polarization phase modulator can be realized only through simple design, and the method has a very good application prospect.

A thin-film transistor and a manufacturing method thereof are characterized in that: the active layer is a group IV-VI compound semiconductor film; the group IV-VI compound is one of geranium sulfide (GeS), germanium selenide (GeSe), germanium telluride (GeTe), tin selenide (SnSe), and tin telluride (SnTe) or a ternary, quaternary, or quinary compound thereof; the active layer is deposited by sputtering; and thermal annealing is performed after the active layer is deposited. The thin-film transistor has high carrier mobility and a high current on/off ratio and therefore meets the needs of high-resolution display development.