Device and method for growing high-quality uniform germanium selenide film

A germanium selenide, thin film technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of thin film chemical composition deviation, expensive sol-gel method, difficult to control stoichiometric ratio, etc. The effect of smooth surface, simple and easy operation of device and preparation method

Active Publication Date: 2021-05-28
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Different preparation methods have their own advantages, but also show certain limitations. For example, the vapor deposition method is difficult to achieve thin film growth with uniform thickness in a large area, the sol-gel method is relatively expensive and time-consuming, and the magnetron sputtering method Sulfur-based glass Ge x Se 1-x The stoichiometric ratio is difficult to control, etc.
Since the melting point and boiling point of germanium and selenium are very different, the evaporation rate of each element is different, so that the chemical composition of the film has a large deviation from that of the bulk glass.
At the same time, because it is easy to produce germanium diselenide and other germanium compounds in the reaction process of germanium and selenium, it is easy to have impurities or uneven chemical composition during preparation.

Method used

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  • Device and method for growing high-quality uniform germanium selenide film
  • Device and method for growing high-quality uniform germanium selenide film
  • Device and method for growing high-quality uniform germanium selenide film

Examples

Experimental program
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Effect test

Embodiment 1

[0045] On Si / SiO 2 Growth of GeSe film with a thickness of 45nm on the substrate:

[0046] Synthetic GeSe powder is first prepared. Weigh metal germanium powder (99.99%) and metal Se powder (99.99%) respectively according to the molar ratio of 1:1, put into the mortar and mix, put the powder of the two directly into the mould, use SPS tabletting, put The original drug powder was prepared and compressed into a cylindrical sample with a height of 2 mm and a diameter of 12.7 mm, and then ground into a powder, which was used as a growth source for gas phase transport.

[0047] Place the cleaned built-in Φ50mm quartz tube with a length of 1500mm horizontally in the tube furnace, place a Φ25mm tube with a length of 500mm inside the tube, put a germanium selenide powder growth source at the heating center, and place it downstream of the carrier gas direction perpendicular to the airflow to place a piece of SiO with a thickness of 300nm 2 SiO 2 / Si substrate, SiO 2 Facing the gro...

Embodiment 2

[0058] Growth of GeSe film with a thickness of 60nm on a quartz substrate:

[0059] Synthetic GeSe powder is first prepared. Weigh metal germanium powder (99.99%) and metal Se powder (99.99%) respectively according to the molar ratio of 1:1, put them into a mortar and mix them, put the powders of the two directly into the mold, use SPS to press the powder, and The original drug powder was prepared and compressed into a cylindrical sample with a height of 2 mm and a diameter of 12.7 mm, and then ground into a powder, which was used as a growth source for gas phase transport.

[0060] Place the cleaned built-in Φ50mm quartz tube with a length of 1500mm horizontally in the tube furnace, place a Φ25mm tube with a length of 500mm inside the tube, put a germanium selenide powder growth source at the heating center, and place it in the downstream direction of the carrier gas A quartz substrate is placed in the vertical air flow, and the substrate and the source are placed on the qua...

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Abstract

The invention relates to a device and method for growing a high-quality uniform germanium selenide film. In a tubular quartz furnace, by using a physical vapor transport method, the uniform germanium selenide film is grown on each of various substrates by vertically placing the substrates, adjusting the growth temperature (400-600 DEG C) and using GeSe as a growth source. The prepared material is uniform in component, and the film thickness uniformity is greater than 10%. The method is simple to operate and low in cost. An absorption spectrum of the prepared germanium selenide film in a visible light region is closely related to the thickness of the film. The device and the method can be used for preparing a germanium selenide coating, a glass film and a thermoelectric film of an ultra-thin optoelectronic device.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation, and relates to a device and method for growing high-quality uniform germanium selenide thin films on various substrates. Background technique [0002] GeSe is a group IV-VI chalcogenide, which is non-toxic and abundant in reserves. The bandgap width of GeSe matches the visible spectrum, with up to 105 cm in the visible region -1 Absorptivity, while having a high hole mobility of 128cm 2 V -1 the s -1 . Due to its excellent electrical and thermal properties, GeSe is also a potential excellent thermoelectric material. P-type and n-type materials can exist stably by adjusting their composition and structure, and are expected to be applied to thermoelectric devices. The current report of GeSe-based thermoelectric materials ZT can reach 0.97. In addition, GeSe is also considered to be able to be used as an absorber material for photovoltaic power generation. The energy conversion ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/22C23C14/06
CPCC23C14/0623C23C14/228
Inventor 姜鹏袁敏包信和
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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