Preparation method of germanium diselenide nano material

A technology of germanium diselenide and nanomaterials, which is applied in the field of preparation of germanium diselenide, can solve the problems of unrealistic industrial application, high cost, complicated preparation process, etc., and achieve controllable growth, which is beneficial to the preparation and growth process fast and efficient results

Active Publication Date: 2021-03-09
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are few reports on the controllable preparation of high-quality germanium diselenide nanobelts and their nan

Method used

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  • Preparation method of germanium diselenide nano material
  • Preparation method of germanium diselenide nano material
  • Preparation method of germanium diselenide nano material

Examples

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Embodiment 1

[0031] The fluorophlogite substrate is treated with adhesive tape and a fresh surface is peeled off. According to the order of air flow from upstream to downstream, put germanium selenide powder (placed outside the heating area), fluorine phlogopite mica sheet (11-13cm downstream from the heating center), and the vertical height of mica sheet from the bottom of the quartz tube is 6mm , germanium selenide powder quality is 30mg. Then, argon gas (500 sccm) was introduced into the reaction chamber to clean the reaction chamber, and the residual air in the chamber was discharged, and the cleaning time was 30 minutes. Then the temperature was programmed to make the heating center temperature of the tube furnace reach 570 °C. Argon gas (5 sccm) is used as a carrier gas to transport the reactive substances of germanium diselenide to the mica substrate to realize the growth of germanium diselenide nanomaterials, and the growth time is 12 minutes. After the growth is finished, wait u...

Embodiment 2～7

[0034] The fluorophlogopite substrate in Example 1 is replaced by graphene, pyrolytic graphite, and two-dimensional layered materials such as tungsten disulfide, molybdenum diselenide, and tungsten diselenide, respectively. Experimental results show that these two-dimensional layered materials can also obtain better quality germanium diselenide nanobelts and nanofilms.

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Abstract

The invention discloses a preparation method of a germanium diselenide nano material. Based on a chemical vapor deposition method, the controllable growth of the germanium diselenide nano material canbe realized by adjusting the carrier gas flow and the spatial placement position of the growth substrate. After the chemical deposition system is heated to a specified temperature, germanium selenidehigh-purity powder is rapidly pushed to a heating center, and a reaction precursor is transported to a low-temperature area by a carrier gas; germanium diselenide nano-materials (nanobelts and nano-films) with adjustable shapes, sizes and thicknesses can be obtained by placing the reaction precursor on substrates at different spatial positions in the low-temperature area; and according to the experimental method provided by the invention, industrial production of the germanium diselenide nanostructure can be realized.

Description

technical field [0001] The invention relates to the preparation of germanium diselenide, in particular to a preparation method of germanium diselenide nanometer material. Background technique [0002] In 2004, graphene was successfully prepared experimentally for the first time, and exhibited peculiar physical properties, which attracted extensive attention from researchers all over the world, and then set off an upsurge in the research of two-dimensional materials. However, the crystal structures of two-dimensional materials such as graphene and boron nitride have high symmetry, and their optical, electrical, thermal and other physical properties do not show anisotropic characteristics, which limits their applications in polarized light detectors, thermal Applications in fields such as rectifiers. Two-dimensional germanium diselenide has attracted extensive attention of scholars due to its unique crystal structure. Germanium diselenide is a typical direct bandgap semicondu...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y40/00
CPCC01B19/007B82Y40/00C01P2004/20C01P2004/02C01P2004/04C01P2002/82C01P2002/85C01P2002/72
Inventor 郝国林高炜奇周国梁刘文祥
Owner XIANGTAN UNIV
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