Directional growth GeSe2 nanowire and preparation method thereof

A technology for directional growth and nanowires, applied in the field of directional growth of GeSe2 nanowires and their preparation, can solve the problems of long time required for preparation methods, difficult to control reaction conditions, expensive precursor materials, etc., to achieve controllable growth, The effect of easy control of reaction conditions and low production cost

Pending Publication Date: 2022-04-19
XIANGTAN UNIV
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a directional growth GeSe 2 Nanowire and its preparation method solve the problem of GeSe in the prior art 2 The nanowire preparation method is complex in process, expensive precursor materials, long time required for preparation method, difficult to control reaction conditions, low reproducibility, etc.

Method used

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  • Directional growth GeSe2 nanowire and preparation method thereof
  • Directional growth GeSe2 nanowire and preparation method thereof
  • Directional growth GeSe2 nanowire and preparation method thereof

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preparation example Construction

[0030] The invention discloses a directional growth GeSe 2 A method for preparing nanowires, specifically comprising the following steps:

[0031] (1) Preparation of materials and utensils

[0032] Prepare two oval ceramic stone boats with a length of 6-8cm, a width of 0.8-1.2cm, and a groove with a depth of 0.4-0.6cm inside. The wall thickness of the stone boat is 0.1-0.2cm;

[0033] Prepare a mica sheet with a length of 2-4 cm, a width of 1.5-3.5 cm, and a thickness of 0.05-0.15 mm.

[0034] Place a certain quality of selenium powder in the middle of one of the stone boats and spread it evenly; place a certain quality of germanium powder in the middle of the other stone boat and spread it evenly, then place the germanium powder in the center of the stone boat for preparation For a good mica substrate, the mica substrate is just suspended above the germanium powder, and at this time, air flow can pass under the mica substrate. Wherein, the mass of the selenium powder and t...

Embodiment 1

[0045] Place 0.23g (0.0029mol×99%) of selenium powder and 0.12g (0.0017mol×99%) of germanium powder in the middle of the two stone boats, spread them evenly, and place them in the center of the germanium powder. The mica substrate, so that the mica substrate just hangs above the germanium powder. Place two stone boats containing selenium powder and germanium powder in the left and right heating chambers of the vacuum atmosphere furnace respectively, and seal the atmosphere furnace. Pass argon gas from the side of the selenium powder to carry out the scrubbing operation, and the flow rate of the argon gas and the scrubbing time are shown in Table 1 below. After the washing is completed, the growth conditions are set, as shown in Table 2 below for details. Then start the heating button, and when the temperature of the two heating chambers exceeds 100°C, adjust the argon flow rate, and simultaneously add hydrogen gas from the side of the selenium powder. The argon gas flow rate ...

Embodiment 2

[0056] Place 0.36g (0.0046mol×99%) of selenium powder and 0.16g (0.0022mol×99%) of germanium powder in the middle of the two stone boats, spread them evenly, and place them in the center of the germanium powder. The mica substrate, so that the mica substrate just hangs above the germanium powder. Place two stone boats containing selenium powder and germanium powder in the left and right heating chambers of the vacuum atmosphere furnace respectively, and seal the atmosphere furnace. Pass argon gas from the side of the selenium powder to carry out the scrubbing operation, and the flow rate of the argon gas and the scrubbing time are shown in Table 3 below. After the gas washing is completed, the growth conditions are set, as shown in Table 4 below for details. Then start the heating button, and when the temperature of the two heating chambers exceeds 100°C, adjust the flow of argon, and add hydrogen from the side of the selenium powder at the same time, the flow of argon and hy...

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Abstract

The invention relates to the technical field of electronic materials, in particular to a directionally grown GeSe2 nanowire and a preparation method thereof. According to the specific technical scheme, the preparation method of the directionally-grown GeSe2 nanowire comprises the following steps: in a vacuum environment, performing chemical vapor deposition on selenium powder and germanium powder in the respective heating process to obtain the directionally-grown GeSe2 nanowire; wherein the growth substrate of the chemical vapor deposition is arranged above the germanium powder. The problems that in the prior art, a GeSe2 nanowire preparation method is complex in process, expensive in precursor material, long in time required by the preparation method, difficult in reaction condition control, low in reproducibility and the like are solved.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a directional growth GeSe 2 Nanowires and methods of making them. Background technique [0002] Current GeSe 2 Materials are mainly prepared by physical vapor deposition (PVD) and chemical vapor deposition (CVD). Although the traditional PVD preparation method has a simple process and less consumables, but for GeSe 2 The preparation of the sample did not achieve the desired effect. As far as the current situation is concerned, many GeSe 2 Nanomaterials are difficult to prepare in one step or the preparation process takes too long. A GeSe is described in the document Optical Materials 100(2020) 109697 2 The preparation method of the thin film, the preparation method used in this article includes two steps: firstly utilize the carbon powder from GeO 2 The germanium element is reduced from the precursor, and then the resulting germanium element is reacted with sel...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
CPCC01B19/007B82Y30/00B82Y40/00C01P2002/85C01P2004/03C01P2004/04C01P2004/64C01P2004/16Y02P70/50
Inventor 毛宇亮邓纪财吴鑫
Owner XIANGTAN UNIV
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