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A method of preparing a selenium nanomaterial

A germanium diselenide and nanomaterial technology, applied in the field of germanium diselenide preparation, can solve the problems of high cost, complex preparation process, inability to realize industrial application, etc., and achieve the effects of effective growth regulation, fast and efficient growth process

Active Publication Date: 2022-08-05
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are few reports on the controllable preparation of high-quality germanium diselenide nanobelts and their nanofilms. In the few reports, the preparation process is complicated and the cost is too high to realize industrial application.

Method used

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  • A method of preparing a selenium nanomaterial
  • A method of preparing a selenium nanomaterial
  • A method of preparing a selenium nanomaterial

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The fluorocrystalline mica substrate was treated with tape and the fresh surface was torn off. According to the order of air flow from upstream to downstream, put germanium selenide powder (placed outside the heating area), fluorine crystal mica sheet (downstream from the heating center 11-13cm), and the mica sheet is 6mm from the bottom of the quartz tube. , the mass of germanium selenide powder is 30mg. Then, argon gas (500 sccm) was introduced into the reaction chamber, the reaction chamber was cleaned, and the residual air in the chamber was discharged, and the cleaning time was 30 minutes. Subsequently, the temperature was programmed so that the heating core temperature of the tube furnace reached 570°C. Argon gas (5 sccm) was used as a carrier gas to transport the reactive species of germanium diselenide to the mica substrate to realize the growth of germanium diselenide nanomaterials, and the growth time was 12 minutes. After the growth, the temperature of the ...

Embodiment 2～7

[0034] The fluorocrystalline mica substrate in Example 1 was replaced by graphene, high pyrolytic graphite, and two-dimensional layered materials such as tungsten disulfide, molybdenum diselenide, and tungsten diselenide, respectively. The experimental results show that these two-dimensional layered materials can also obtain germanium diselenide nanobelts and nanofilms with good quality.

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Abstract

The invention discloses a preparation method of germanium diselenide nano material. Based on the chemical vapor deposition method, the controllable growth of germanium diselenide nanomaterials can be achieved by adjusting the flow rate of the carrier gas and the spatial placement of the growth substrate. After the chemical deposition system is heated to the specified temperature, the high-purity germanium selenide powder is quickly pushed to the heating center, and the reaction precursor is transported to the low temperature region by the carrier gas; the morphology can be obtained by placing it on the substrate at different spatial positions in the low temperature region , germanium diselenide nanomaterials (nanobelts, nanofilms) with adjustable size and thickness; and according to the experimental method of the present invention, the industrialized production of germanium diselenide nanostructures can be realized.

Description

technical field [0001] The invention relates to the preparation of germanium diselenide, in particular to a preparation method of germanium diselenide nanomaterials. Background technique [0002] In 2004, graphene was successfully prepared experimentally for the first time, and it exhibited peculiar physical properties, which attracted widespread attention from researchers around the world, and set off a research upsurge in two-dimensional materials. However, the crystal structures of two-dimensional materials such as graphene and boron nitride have high symmetry, and their optical, electrical, thermal and other physical properties do not exhibit anisotropic characteristics, which limit their applications in polarized light detectors, thermal Rectifier and other fields of application. Two-dimensional germanium diselenide has attracted extensive attention due to its unique crystal structure. Germanium diselenide is a typical direct bandgap semiconductor with a band gap betwe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y40/00
CPCC01B19/007B82Y40/00C01P2004/20C01P2004/02C01P2004/04C01P2002/82C01P2002/85C01P2002/72
Inventor 郝国林高炜奇周国梁刘文祥
Owner XIANGTAN UNIV
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