Method for preparing imaging element based on two-dimensional germanium selenide photodetector

Abstract

The invention provides a method for preparing an imaging element based on a two-dimensional germanium selenide photodetector, and belongs to the technical field of two-dimensional semiconductor imaging. The method comprises a step of preparing a two-dimensional germanium selenide single crystal, a step of peeling the two-dimensional germanium selenide single crystal into a two-dimensional germanium selenide nanosheet and transferring to a silicon wafer substrate having a silicon dioxide oxide layer to obtain a thin layer of two-dimensional selenide nano-sheets, and a step of making the two-dimensional germanium selenide nanosheet thin layer into a two-dimensional germanium selenide two-end device and obtaining an imaging element based on a two-dimensional germanium selenide photodetector,wherein the two-dimensional germanium selenide two-end device is the two-dimensional germanium selenide photodetector. According to the method, by making the two-dimensional germanium selenide nanosheet into the two-dimensional germanium selenide two-end device, an original charge-coupled component is substituted, and the effects of small size and the facilitation of processing and integration canbe achieved.

Description

technical field [0001] The invention relates to the field of two-dimensional semiconductor imaging, in particular to a method for preparing an imaging element based on a two-dimensional germanium selenide photodetector. Background technique [0002] Since the discovery of graphene in 2004, two-dimensional layered materials have attracted extensive attention. As the number of layers of two-dimensional materials decreases, it is affected by surface effects, volume effects, and quantum size effects. The physical properties of nanomaterials may be significantly different from those of macroscopic materials, such as monolayer Molybdenum sulfide is a direct band gap material, and its band gap becomes an indirect band gap after more than one layer. These peculiar physical properties have broad application prospects. [0003] Then the realization of the function of two-dimensional materials is very important. Ordinary photodetection of two-dimensional materials such as molybdenum ...

AI Technical Summary

Problems solved by technology

However, the current research on two-dimensional materials has limitations. Most of the research focuses on photodetectors, and there are too few studies on its application to imaging elements, and the charge-coupled elements used in existing imaging elements are large in size. , which is not conducive to processing and integration, so it also increases the cost of imaging equipment

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