A kind of germanium selenide target and preparation method thereof

A germanium selenide and target technology, applied in the field of photoelectric material production, can solve the problems of high energy consumption, easy oxidation, easy to cause pollution and the like

Active Publication Date: 2022-07-01
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This preparation method has the following disadvantages: 1. germanium and selenium need to be prepared into powder, and then mixed evenly, because the specific surface of the powder is relatively large, it is easy to oxidize; 2. argon protection is needed in the process, and the energy consumption is relatively large; 3. The process is more complicated and requires steps such as powder making and briquetting, which is easy to cause pollution

Method used

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  • A kind of germanium selenide target and preparation method thereof

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preparation example Construction

[0032] The invention provides a preparation method of a germanium selenide target material, comprising the following steps:

[0033] A) heating the germanium block to 980~1050 ℃, after keeping warm to obtain germanium solution;

[0034] B) heating the selenium block to 230-250°C, after heat preservation, the selenium block is melted and dropped into the germanium solution to obtain a mixed smelting solution;

[0035] C) heating the mixed smelting solution at 980-1050° C. for 30-60 min, and cooling to obtain a selenium-germanium alloy;

[0036] D) ball milling the selenium-germanium alloy, and the obtained selenium-germanium powder is sintered by vacuum hot pressing to obtain a germanium-selenide target;

[0037] Steps A), B) and C) are carried out under vacuum.

[0038] The raw materials used in the preparation method provided by the present invention are germanium blocks and selenium blocks. The present invention has no special limitation on the purity of the germanium and...

Embodiment 1

[0086] using as figure 1 The shown preparation apparatus prepares the selenium germanium alloy:

[0087] Cuboid-shaped box: a vacuum port is provided on the box cover of the box, and the vacuum port is connected to a vacuum pump;

[0088] a frit crucible arranged in the box, and the germanium block is heated in the frit crucible;

[0089] a quartz funnel (the aperture of the quartz funnel is 0.8 mm) arranged in the box, and the selenium block is heated in the quartz funnel;

[0090] The quartz funnel is placed above the frit crucible, so that the melt in the quartz funnel drops into the frit crucible; the vertical distance between the frit crucible and the quartz funnel is 65 cm.

[0091] a first heating device (ie a high temperature heating furnace), the first heating device is used to heat the crucible; the first heating device is arranged on the outer wall of the upper part of the box;

[0092] A second heating device (ie a low temperature heating furnace), the second he...

Embodiment 2

[0102] using as figure 1 The shown preparation device prepares a selenium-germanium alloy, which is different from Example 1 in that the aperture of the quartz funnel is 1 mm.

[0103] Specific operations:

[0104] Open the box cover, place the germanium block in the melting crucible, place the selenium block in the quartz funnel, close the box cover, put a vacuum flange between the box body and the box cover, and the vacuum degree of vacuuming is 2.5Pa. The molar ratio of germanium block and selenium block is 1:1.012.

[0105] Turn on the first heating device, heat the temperature to 1000°C, keep the temperature for 30min, and obtain the germanium solution; then turn on the second heating device, heat it to 240°C at 12°C / min, keep the temperature for 90min, the selenium block is melted, and drop into the germanium solution , to obtain a mixed molten liquid.

[0106] The second heating device was turned off, the first heating device heated the mixed smelting liquid at 1000°...

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Abstract

The invention relates to the technical field of photoelectric material production, in particular to a germanium selenide target material and a preparation method thereof. The preparation method includes: A) heating the germanium block to 980-1050 DEG C, and keeping the temperature to obtain germanium liquid; B) heating the selenium block to 230-250 DEG C, after keeping the temperature, the selenium block is melted and dropped into the germanium solution , to obtain a mixed smelting solution; C) heating the mixed smelting solution at 980-1050° C. for 30-60 min, and after cooling, a selenium-germanium alloy is obtained; D) the selenium-germanium alloy is ball-milled, and the obtained selenium-germanium powder is Vacuum hot pressing sintering to obtain germanium selenide target; steps A), B) and C) are carried out under vacuum conditions. In the present invention, a selenium-germanium alloy is prepared by a vacuum dropping method, then a selenium-germanium powder is obtained by ball milling, and then a germanium selenide target is prepared by a vacuum hot pressing method. The selenium content varies little.

Description

technical field [0001] The invention relates to the technical field of photoelectric material production, in particular to a germanium selenide target material and a preparation method thereof. Background technique [0002] Germanium Selenide is in Group IVA of the periodic table, and Group VIA compound semiconductors are mostly used in the field of photodetection. The commonly used preparation method of semiconductor compound target generally adopts powder metallurgy method. This method requires that each elemental powder is uniformly mixed or directly sintered with compound powder. The melting point of germanium is 938.5°C, and the melting point of selenium is 221°C. The melting point is too different. Therefore, if germanium powder and selenium powder are directly used to prepare germanium selenide targets, the sintering temperature will be too low and the target density will be poor. Therefore, it is necessary to Synthesis of germanium selenide powder. [0003] The Ch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/547C04B35/645
CPCC04B35/547C04B35/645C04B2235/40
Inventor 文崇斌余芳朱刘童培云谢小林
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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