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36results about How to "Promote grain growth" patented technology

Extra coarse grain WC-Co hard alloy and preparation process thereof

ActiveCN102534344APromote grain growthIncrease the carbon content of tungsten carbideCemented carbideGrain distribution
The invention relates to an extra coarse grain WC-Co hard alloy. The hard alloy comprises 5 to 15 weight percent of Co and the balance of WC, wherein the average grain size of the WC is 6 to 10mu m. A preparation process for the hard alloy comprises the following steps of: pre-ball-milling coarse and fine tungsten carbide to prepare mixed tungsten carbide powder, preparing mixed tungsten carbide powder-cobalt-former mixed powder, pressing, and sintering, wherein the sintering step is divided into a former removing part and a high-temperature sintering part. The average grain size of a metallographic structure of the WC-Co hard alloy prepared by the process is 6mu m or more than 6mu m, the process method is simple and convenient to operate, the prepared hard alloy has a large average grainsize, a narrow grain distribution range, a low thermal expansion coefficient and high heat conductivity, high-temperature wear resistance, transverse rupture strength and rupture toughness, and is suitable for a mining tool and an excavating tool, and the thermal fatigue crack resistance of the alloy is effectively improved.
Owner:HUNAN BOYUN DONGFANG POWDER METALLURGY

Sodium doping method for CIGS-based thin film photovoltaic material

The invention discloses a sodium doping method for a CIGS-based thin film photovoltaic material. According to the method, a substrate, a barrier layer covering the surface of the substrate, a metal back electrode layer covering the barrier layer, a light absorption layer covering the metal back electrode layer, a buffering layer covering the light absorption layer and a transparent conductive window layer covering the buffering layer are included. Sodium doping is carried out on light absorption through the method of depositing Ga-Na alloy materials, heat treatment is carried out on the light absorption layer, and therefore the light absorption layer material containing sodium with the atomic ratio between copper and the sum of indium and gallium is 0.84-0.99 can be formed.
Owner:厦门神科太阳能有限公司

Voidless ceramic metal halide lamps

InactiveUS20140070695A1Improve light output and photometric performancePromote grain growthTube/lamp vessel fillingSolid cathode detailsPerformance improvementCermet
A voidless CMH lamp and a method of making such a lamp are provided. The CMH lamp includes a lamp body that receives at least one end plug. The end plug is constructed from a core of cermet material received within an outer layer of a ceramic material. An electrode is placed into the cermet material. The application of heat causes the cermet material to contract and eliminate voids between the lamp and cermet material. Co-sintering of the lamp, core, and outer layer provides a hermetic seal without necessarily using e.g., a sealing frit. Sintering of the ceramic material surrounding the cermet can be also used to improve light output and photometric performance of the lamp. The creation of one or more openings or recesses in the end plug can also provide performance improvements.
Owner:GENERAL ELECTRIC CO

Method for non-vacuum preparation of nano thin film by taking metallic compound as precursor

The invention discloses a method for non-vacuum preparation of a nano thin film by taking a metallic compound as a precursor. The method comprises the steps of S1. preparing a metallic nano mixing solution; S2. preparing a graphite and superconductive carbon black mixing solution; S3. preparing acrylic photosensitive bisphenol A modified epoxy resin; S4. adding a reactive diluent and the like to the acrylic photosensitive bisphenol A modified epoxy resin; S5. continuing adding other materials to the acrylic photosensitive bisphenol A modified epoxy resin; S6. centrifuging; S7. coating; and S8. recoating and curing. According to the preparation method of the metallic compound thin film, which is disclosed by the invention, a non-vacuum precursor 'ink' offset printing spraying method is adopted to spray the precursor on an elastic substrate to form a metallic absorbed layer thin film; by means of a spray conversion method, dosages of raw materials and additive are easily controlled, ingredients, thickness and uniformity of the film can be conveniently controlled, and full use of addition of the superconductive carbon black and graphite can be achieved; the prepared product is low in granularity, high in bulk crystallization density, and capable of effectively improving a forbidden gap.
Owner:上海先着点光电科技有限公司

The method of non-vacuum preparation of nanometer film with metal compound as precursor

The invention discloses a method for non-vacuum preparation of a nano thin film by taking a metallic compound as a precursor. The method comprises the steps of S1. preparing a metallic nano mixing solution; S2. preparing a graphite and superconductive carbon black mixing solution; S3. preparing acrylic photosensitive bisphenol A modified epoxy resin; S4. adding a reactive diluent and the like to the acrylic photosensitive bisphenol A modified epoxy resin; S5. continuing adding other materials to the acrylic photosensitive bisphenol A modified epoxy resin; S6. centrifuging; S7. coating; and S8. recoating and curing. According to the preparation method of the metallic compound thin film, which is disclosed by the invention, a non-vacuum precursor 'ink' offset printing spraying method is adopted to spray the precursor on an elastic substrate to form a metallic absorbed layer thin film; by means of a spray conversion method, dosages of raw materials and additive are easily controlled, ingredients, thickness and uniformity of the film can be conveniently controlled, and full use of addition of the superconductive carbon black and graphite can be achieved; the prepared product is low in granularity, high in bulk crystallization density, and capable of effectively improving a forbidden gap.
Owner:上海先着点光电科技有限公司

Composite multilayer crucible for beryllium aluminum alloy induction melting and preparation method thereof

The invention discloses a composite multilayer crucible for beryllium-aluminum alloy induction melting and a preparation method thereof, which solves the problem in the prior art that there is no crucible suitable for beryllium-aluminum alloy induction melting. The composite multi-layer crucible of the present invention comprises an inner layer crucible, a middle layer crucible and an outer layer crucible which are fixedly connected sequentially from the inside to the outside; the inner layer crucible is composed of 92.5-97.5 parts of beryllium oxide, 1.0-2.0 parts of calcium oxide, and 0.5-2.0 parts of yttrium oxide. 2.0 parts, made of 1.0-3.5 parts of silicon carbide; the middle crucible is made of graphite; the outer crucible is made of 90-95 parts of calcium oxide, 1-3 parts of magnesium oxide, 2-4 parts of yttrium oxide, and 1-1.5 parts of zirconia , made from 0.5 to 1.5 parts of clay. The composite multilayer crucible structure of the invention has high structural strength and can shield a considerable part of the induced magnetic field. The chemical properties are stable, there is no splashing of the melt during the melting process, the degree of oxygenation is low, and some single-layer structures are replaceable and reusable, with long service life.
Owner:MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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