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Copper target assembly and manufacturing method thereof

A manufacturing method and technology for copper targets, applied in the field of semiconductor manufacturing, can solve the problems of low hardness of high-purity copper targets, and the quality and performance of copper target components need to be improved, so as to improve the quality and performance, reduce the possibility of gaps, improve The effect of yield and performance

Inactive Publication Date: 2018-06-29
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the hardness of the high-purity copper target is low, and it needs to be welded with a high-hardness alloy backplane
[0005] However, the quality and performance of copper target components formed by existing welding techniques need to be improved

Method used

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  • Copper target assembly and manufacturing method thereof
  • Copper target assembly and manufacturing method thereof
  • Copper target assembly and manufacturing method thereof

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Embodiment Construction

[0044] It can be seen from the background technology that the hardness of the copper target is low, and it needs to be welded with a high-hardness alloy back plate to form a copper target assembly before it can be used.

[0045] The copper target assembly is composed of high-purity copper target and alloy material back plate. The two need to be welded together during the manufacturing process. At present, the commonly used welding methods mainly include tin welding and diffusion welding.

[0046] For the copper target components manufactured by the soldering process, due to the low melting point of tin and poor high temperature resistance, when the temperature of the machine used for the copper target components is high, the phenomenon of solder melting is prone to occur, which is easy to increase the product risk of desoldering.

[0047] Diffusion welding is a high-temperature, high-strength welding method. However, if the temperature of diffusion welding is too high, the ...

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Abstract

The invention provides a copper target assembly and a manufacturing method of the copper target assembly. The manufacturing method comprises the steps that a back plate and a copper target are provided, wherein the back plate comprises a first welding face, and the copper target comprises a second welding face; a pattern composed of multiple protrusions is formed on the first welding face; the second welding face and the first welding face provided with the pattern are oppositely arranged and attached to each other to form an initial assembly; welding treatment is conducted on the initial assembly, the protrusions of the first welding face are embedded into the second welding face, a welded layer is formed between the copper target and the back plate, the thickness of the welded layer is larger than or equal to the height of each protrusion, and then the copper target assembly is obtained. By the adoption of the copper target assembly and the manufacturing method of the copper target assembly, the possibility that a gap appears in the welded layer is effectively reduced, so that the quality and performance of the formed copper target assembly can be effectively improved, and the yield and performance of a manufactured semiconductor chip are improved beneficially.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a copper target component and a manufacturing method thereof. Background technique [0002] Sputtering technology is one of the commonly used processes in the field of semiconductor manufacturing. With the increasing development of sputtering technology, sputtering targets play an increasingly important role in sputtering technology. The quality of sputtering targets directly affects the sputtering technology. Film quality after injection. [0003] In the field of sputtering target manufacturing, the target assembly is composed of a target blank that meets the sputtering performance and a back plate that is combined with the target blank by welding. During the sputtering process, the working environment of the target assembly is relatively harsh. For example: one side of the back plate of the target assembly is forcibly cooled by a certain pressure of cooling water, w...

Claims

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Application Information

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IPC IPC(8): B23P15/00
CPCB23P15/00
Inventor 姚力军潘杰相原俊夫王学泽廖培君
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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