60 results about "Sodium doping" patented technology

A method of processing sodium doping for thin-film photovoltaic material includes forming a metallic electrode on a substrate. The invention also discloses a structure used for forming the photovoltaic material. A sputter deposition using a first target device comprising 4-12 wt% of Na 2 SeO 3 and 88-96 wt% of copper-gallium species is used to form a first precursor with a first Cu / Ga composition ratio. A second precursor over the first precursor has copper species and gallium species deposited using a second target device with a second Cu / Ga composition ratio substantially equal to the first Cu / Ga composition ratio. A third precursor comprising indium material overlies the second precursor. The precursor layers are subjected to a thermal reaction with at least selenium species to cause formation of an absorber material comprising sodium species and a copper to indium-gallium atomic ratio of about 0.9.

The invention discloses a method for preparing a lithium position sodium-doped oxygen lithium vanadium phosphate anode material of a lithium ion battery. The nominal constitution formula of the anode material is Li1-xNaxVOPO4 and the doping amount is in a range that x is more than 0 and less than 0.05. The method comprises the following steps of: mixing lithium sources, sodium sources, vanadium sources and phosphorus sources in a certain proportion; adding dispersants into the mixture to perform mixing and ball milling for 4 to 6 hours to obtain rheological jelly; drying the jelly at the temperature of 60 to 80 DEG C for 2 hours and grinding the dried jelly into powder; and sintering the jelly powder in a certain atmosphere at the temperature of 400 to 800 DEG C for 6 to 10 hours to obtain lithium position sodium-doped oxygen lithium vanadium phosphate powder of which the nominal constitution formula is Li1-xNaxVOPO4( x is more than 0 and less than 0.5). In the method, the anode material lithium position sodium-doped oxygen lithium vanadium phosphate powder which is used for secondary Lithium-Ion batteries and doped with the sodium at lithium position and has high crystallinity and uniform content is prepared by simple mixing, ball milling and drying processes, controlling thermal treatment temperature and time, and a rheological phase method suitable for commercial production; and the initial discharge capacity at room temperature is more than 140mAh / g. Compared with pure oxygen lithium vanadium phosphate, the oxygen lithium vanadium phosphate of the invention obviously improves matrix capacities and cycle performance, particularly high-rate cycle performance. The synthesis process of the material is suitable for industrialized production.

The invention relates to in chamber sodium doping process and system for large scale fabrication of CIGS based thin film photovoltaic materials. A method of processing a photovoltaic materials using a sputtering process including providing at least one transparent substrate having an overlying first electrode layer. The method further including forming an overlying copper and gallium layer using a first sputtering process within a first chamber from a first target including a copper species and a gallium species. Additionally, the method includes forming an indium layer overlying the copper and the gallium layer using a second sputtering process within the first chamber from a second target including an indium species. The method further includes forming a sodium bearing layer overlying the indium layer using a third sputtering process within the first chamber, thereby forming a composite film including the copper and gallium layer, the indium layer, and the sodium bearing layer. Furthermore, the method includes subjecting the composite film to at least a thermal treatment process to form a chalcopyrite absorber layer comprising copper, indium, gallium, and sodium therein.

A method of sodium doping in fabricating CIGS / CIS based thin film solar cells includes providing a shaped substrate member. The method includes forming a barrier layer over the surface region followed by a first electrode layer, and then a sodium bearing layer. A precursor layer of copper, indium, and / or gallium materials having an atomic ratio of copper / group III species no greater than 1.0 is deposited over the sodium bearing layer. The method further includes transferring the shaped substrate member to a second chamber and subjecting it to a thermal treatment process within an environment comprising gas-phase selenium species, followed by an environment comprising gas-phase sulfur species with the selenium species being substantially removed to form an absorber layer.

The invention provides a sodium-doped molybdenum plane sputtering target material. The sodium-doped molybdenum plane sputtering target material comprises molybdenum and sodium, wherein molybdenum atoms account for 90-99%, and the remaining is sodium atoms. The invention further provides a preparation method of the sodium-doped molybdenum plane sputtering target material. The sodium-doped molybdenum plane sputtering target material provided by the invention can greatly improve the conversion efficiency of a copper indium gallium selenium thin film battery, reduce production cost and realize large-scale industrialization of the copper indium gallium selenium thin film batteries by doping a sodium element in a molybdenum back electrode. According to the preparation method, molybdenum trioxide, sodium hydroxide and the molybdenum metal are taken as raw materials, and the sodium-doped molybdenum plane sputtering target material is prepared through reaction, ball milling, screening, hot pressing and other processes; the preparation method has the advantages of simple processes and low cost and is suitable for industrial production; and as for the prepared target material, the relative density is high and can be above 95%, the oxygen density is high and can achieve 250ppm, and the size is small and can achieve 60-100mu m.

The invention discloses a method for preparing a binary doped cathode material lithium vanadium phosphate of a lithium ion battery. The method comprises the following steps of: mixing aqueous hydrogen peroxide solution and vanadium pentoxide to react to obtain vanadium pentoxide hydrogel; synthesizing a precursor of the cathode material Li3-xNaxV2(PO4-yFy)3 of the lithium ion battery by one step by using the vanadium pentoxide hydrogel, diammonium hydrogen phosphate, lithium hydroxide monohydrate, sodium salt, fluorine-containing salt and polyethylene glycol as raw materials; and roasting the precursor under the protection of inert gas to facilitate V<5+> to be completely reduced into V<3+> and generate the product Li3-xNaxV2(PO4-yFy)3. The method is simple and convenient, and has the characteristics of easy control and low cost; the synthesis process is simplified, sodium-doped Li3V2(PO4)3 has a larger lithium ion transportation channel, and the body conductivity of Li3V2(PO4)3 can be increased; and besides, by adding a little amount of fluorine, the polarization of the electrode can be reduced, the charge transfer resistance can be reduced, the diffusion rate of Li<+> can be increased, and the charging and discharging performance and the rate capability of the sample are improved finally.

The invention provides a sodium-doped CIGS (copper indium gallium selenide) film based on a composite substrate and a preparation method thereof. The substrate is composed of soda glass and a polyimide film grown on the surface of the soda glass, the thickness of the soda glass is in the range of 1.5-2mm, the thickness of the polyimide film is in the range of 25-30[mu]m, the chemical formula of a CIGS film grown on the surface of the composite substrate is CuIn<1-x>Ga<x>Se<2>, x represents 0.25-0.35, and the conduction is in a p type, the CIGS film CuIn<1-x>Ga<x>Se<2> is arranged on the surface of the polyimide film-soda glass composite substrate by means of thin-film deposition, and the thickness is in the range of 1.5-2[mu]m. The CIGS film based on the polyimide film-soda glass composite substrate is good in quality, large in crystal grain, and has fewer defects, a flexible solar cell is made by a rigid substrate, and the preparation method is simple and easy to implement, and is favorable for large-scale popularization and application.

A method for processing a thin-film absorber material with enhanced photovoltaic efficiency includes forming a barrier layer on a soda lime glass substrate followed by formation of a stack structure of precursor layers. The method further includes subjecting the soda-lime glass substrate with the stack structure to a thermal treatment process with at least H2Se gas species at a temperature above 400° C. to cause formation of an absorber material. By positioning the substrates close together, during the process sodium from an adjoining substrate in the furnace also is incorporated into the absorber layer.

A method of processing a plurality of photovoltaic materials in a batch process includes providing at least one transparent substrate having an overlying first electrode layer and an overlying copper species based absorber precursor layer within an internal region of a furnace. The overlying copper species based absorber precursor layer has an exposed face. The method further includes disposing at least one soda lime glass comprising a soda lime glass face within the internal region of the furnace such that the soda lime glass face is adjacent by a spacing to the exposed face of the at least one transparent substrate. Furthermore, the method includes subjecting the at least one transparent substrate and the one soda lime glass to thermal energy to transfer one or more sodium bearing species from the soda lime glass face across the spacing into the copper species based absorber precursor layer via the exposed face.

The invention relates to a sodium doped lithium-rich manganese based cathode material for a lithium ion battery. The material is a sodium salt doped lithium-rich manganese based solid solution cathode material of which the general formula is xLi[Li1 / 3Mn2 / 3]O2.(1-x)LiNi0.2Co0.2Mn0.6O2, wherein x is equal to or greater than 0.4 and is equal to or less than 0.7, the doped quantity of sodium elements is 1-10% of the mol content of lithium elements, and the sodium salt is one selected from Na2CO3, Na2C2O4 and NaNO3. The mol content of ternary phase manganese of the sodium doped lithium-rich manganese based cathode material for the lithium ion battery is greater than 50%, and the manganese with high reserves and low price is used for replacing cobalt and nickel, so that the application cost can be reduced. Compared with the prior art, the sodium doping provided by the invention can improve the discharging specific capacity and the circulating stability of the rich lithium manganese based cathode material.