Sodium-doped CIGS (copper indium gallium selenide) film based on composite substrate and preparation method thereof

A technology of copper indium gallium selenide and composite substrate, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc. The effect of good quality, easy implementation, and simple preparation method

Inactive Publication Date: 2016-09-28
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although doping Na elements by these methods can improve the electrical properties of thin-film solar cells, but by observing the crystal structure of the absorbing layer, it is found that the grain size of the absorbing layer film is smaller than that of the sample without Na doping, and the grain boundaries increase. , which to a certain extent will have a negative impact on the performance of CIGS thin film solar cells

Method used

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  • Sodium-doped CIGS (copper indium gallium selenide) film based on composite substrate and preparation method thereof

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Effect test

Embodiment 1

[0033] A copper indium gallium selenium thin film based on polyimide film-soda glass composite substrate, as shown in Figure 1, the chemical molecular formula is Culn 1-x Ga x Se2, where x is 0.25, and the conductivity type is p-type, the CuInGaSe thin film Culn 1-x Ga x Se 2 The film is deposited on the surface of the polyimide film-soda glass composite substrate with a thickness of 1.5 μm; the preparation method is to prepare the polyimide film-soda glass substrate by uniform glue and curing process, and the film is prepared by selenization furnace The system uses a co-evaporation one-step preparation process to prepare a copper indium gallium selenium thin film on a composite substrate, and the preparation steps are as follows:

[0034] (1) Cleaning of soda glass

[0035] 1) Put a 10cm×10cm soda glass into potassium dichromate-concentrated sulfuric acid solution, which is composed of 300 grams of potassium dichromate, 3 liters of concentrated sulfuric acid and 300 ml of...

Embodiment 2

[0048] A copper indium gallium selenium thin film based on polyimide film-soda glass composite substrate, as shown in Figure 1, the chemical molecular formula is Culn 1-x Ga x Se 2 , where x is 0.35, and the conductivity type is p-type; the CuInGaSe thin film CuIn 1-x Ga x Se 2 The film is deposited on the surface of the polyimide film-soda glass composite substrate with a thickness of 2 μm; the preparation method adopts the process of uniform glue and curing to prepare the polyimide film-soda glass substrate, and uses a selenization furnace film preparation system, The copper indium gallium selenium thin film on the composite substrate is prepared by the co-evaporation one-step preparation process, and the preparation steps are as follows:

[0049] (1) Cleaning of soda glass

[0050] 1) Put a 10cm×10cm soda glass into potassium dichromate-concentrated sulfuric acid solution, which is composed of 300 grams of potassium dichromate, 3 liters of concentrated sulfuric acid an...

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Abstract

The invention provides a sodium-doped CIGS (copper indium gallium selenide) film based on a composite substrate and a preparation method thereof. The substrate is composed of soda glass and a polyimide film grown on the surface of the soda glass, the thickness of the soda glass is in the range of 1.5-2mm, the thickness of the polyimide film is in the range of 25-30[mu]m, the chemical formula of a CIGS film grown on the surface of the composite substrate is CuIn<1-x>Ga<x>Se<2>, x represents 0.25-0.35, and the conduction is in a p type, the CIGS film CuIn<1-x>Ga<x>Se<2> is arranged on the surface of the polyimide film-soda glass composite substrate by means of thin-film deposition, and the thickness is in the range of 1.5-2[mu]m. The CIGS film based on the polyimide film-soda glass composite substrate is good in quality, large in crystal grain, and has fewer defects, a flexible solar cell is made by a rigid substrate, and the preparation method is simple and easy to implement, and is favorable for large-scale popularization and application.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to a copper indium gallium selenide thin film based on a polyimide film-soda glass composite substrate. Background technique [0002] The copper indium gallium selenide material belongs to the group I-III-VI quaternary compound semiconductor and has a chalcopyrite crystal structure. Since the appearance of copper indium gallium selenide thin film solar cells in the 1970s, it has developed very rapidly and will gradually realize industrialization. This battery has the following characteristics: 1) The bandgap width of CIGS can be adjusted in the range of 1.04ev-1.67ev; 2) CIGS is a direct bandgap semiconductor with an absorption coefficient of up to 10 for visible light 5 cm -1 , the thickness of the CIGS absorption layer is only 1.52.5 μm, and the thickness of the whole battery is 3-4 μm; 3) Strong radiation resistance, more suitable as a space power supply; 4) High ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/02H01L31/18
CPCH01L31/02H01L31/035272H01L31/18Y02P70/50
Inventor 薛玉明王玉昆孙海涛宋殿友夏丹冯少君俞兵兵张奥
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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