Sodium-doped CIGS (copper indium gallium selenide) solar cell device and production method thereof

A copper indium gallium selenide and thin film preparation technology, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., to achieve the effects of not being easily deformed, improving adhesion, and good growth

Inactive Publication Date: 2014-12-24
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the polyimide film does not contain sodium element, and its polymer structure prevents sodium in the composite substrate from entering the CIGS absorber layer

Method used

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  • Sodium-doped CIGS (copper indium gallium selenide) solar cell device and production method thereof
  • Sodium-doped CIGS (copper indium gallium selenide) solar cell device and production method thereof

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Embodiment 1

[0056] The preparation of sodium-doped copper indium gallium selenide solar cell based on polyimide film-soda glass composite substrate, the preparation steps are as follows:

[0057] 1) Cleaning of soda glass

[0058] ① Soak a 10cm×10cm soda glass in potassium dichromate solution (a solution made of 300 grams of potassium dichromate, 3 liters of concentrated sulfuric acid and 300 ml of deionized water) for 2 hours; ② Take out the soda glass Rinse with deionized water; ③Place the rinsed soda glass in an acetone solution with a concentration of 99.5%, and put it into an ultrasonic cleaning machine for cleaning (ultrasonic frequency is 20kHz, time is 25min) ④Take the soda glass out of the acetone solution , rinse with deionized water; ⑤ put the soda glass in 99.7% alcohol and put it into an ultrasonic cleaning machine for cleaning (ultrasonic frequency is 20kHz, and the time is 25min); ⑥ finally take out the soda glass from the alcohol, put Put it into a beaker filled with deio...

Embodiment 2

[0080] The preparation of sodium-doped copper indium gallium selenide solar cell based on polyimide film-soda glass composite substrate, the preparation steps are as follows:

[0081] 1) Cleaning of soda glass

[0082] ① Soak a 10cm×10cm soda glass in potassium dichromate solution (a solution prepared from 300 grams of potassium dichromate, 3 liters of concentrated sulfuric acid and 300 ml of deionized water) for 2 hours; ② Take out the soda glass Rinse with deionized water; ③Place the rinsed soda glass in an acetone solution with a concentration of 99.5%, and put it into an ultrasonic cleaning machine for cleaning (ultrasonic frequency is 30kHz, time is 20min) ④Take the soda glass out of the acetone solution , rinse with deionized water; ⑤ put the soda glass in 99.7% alcohol and put it into an ultrasonic cleaning machine for cleaning (ultrasonic frequency is 30kHz, and the time is 20min); ⑥ finally take out the soda glass from the alcohol, put Put it into a beaker filled wit...

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Abstract

A sodium-doped CIGS (copper indium gallium selenide) solar cell device based on a polyimide film and soda glass combined substrate is characterized in that the substrate is composed of soda glass and a polyimide film grown on the surface of the substrate; a CIGS solar cell is produced on the surface of the substrate. The sodium-doped CIGS solar cell device has the advantages that adhesion of the CIGS film on the substrate is excellent, crystal quality is high, grains are thick and large, and defects are few; after the complete CIGS solar cell is produced, the CIGS solar cell is separated from the soda glass to form a flexible CIGS solar cell with the polyimide film as a substrate, and a flexible cell can be produced with the rigid substrate; a production method is simple, easy to implement and convenient to popularize and apply on a large scale and has extremely important application prospect in space and special places.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a sodium-doped copper indium gallium selenium solar cell device based on a polyimide film-soda glass composite substrate and its preparation. Background technique [0002] Copper indium gallium selenide (CIGS) belongs to group I-III-VI quaternary compound semiconductors and has a chalcopyrite crystal structure. Since the appearance of copper indium gallium selenide thin film solar cells in the 1970s, it has developed very rapidly and will gradually realize industrialization. This battery has the following characteristics: ①The bandgap width of CIGS can be adjusted within the range of 1.04ev-1.67ev. ②CiInGaSe is a direct bandgap semiconductor with an absorption coefficient of up to 10 for visible light 5 cm -1 . The thickness of the CIGS absorption layer only needs to be 1.5-2.5 μm, and the thickness of the whole battery is 3-4 μm. ③It has strong anti-radiation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0445H01L31/18
CPCH01L31/0322Y02E10/541Y02P70/50
Inventor 薛玉明尹富红宋殿友潘洪刚朱亚东刘君李鹏海冯少君张嘉伟刘浩高林航伟乔在祥冯永旺刘贵川闫兵靳忠杰胡盛开
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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