70 results about "Microwave chips" patented technology

The invention discloses an electromagnetic field near-field imaging system and method based on pulsed light detection magnetic resonance. The system consists of a laser pump optical path, a microwave source, a diamond NV color-center probe, a CCD camera unit, a synchronization system, a displacement scanning platform, control software and a data analysis imaging system. In the system, a large diamond single crystal containing the NV color-center is used as a detection unit, a static magnetic field is used to split a magnetic resonance peak of the diamond NV color-center into eight peaks, the eight resonance peaks correspond to four crystal axis directions <111>, <1-11>, <-111>, <11-1> of a diamond lattice structure, by measuring the Rabi frequency of each resonance peak, the strength of a circularly polarized microwave field perpendicular to the corresponding crystal axis direction is obtained, and through comprehensive calculation of the microwave field strengths in the four directions, the strength and direction of a microwave vector are then reconstructed. Through the microwave near-field high-resolution imaging of a local region of a microwave chip under measurement, the quantitative data can be provided for the failure analysis of the chip.

The invention provides a multilayer interconnection packaging structure of an embedded microwave multi chip with a silicon chip as a substrate and a manufacturing method. The invention is characterized by utilizing the low-cost silicone chip as the chip embedded substrate and using wire bonding and ball mounting technology to prepare gold bumps, realizing short-distance interconnection between microwave chips, using a low-k liquid or colloidal polymer as a dielectric layer, realizing the multilayer interconnection structure of a metal / organic polymer by combining wafer level processing technics such as photoetching, electroplating, chemical mechanical polishing and the like and realizing system integration of active and passive devices. The whole packaging structure has higher packaging integration and lower high-frequency transmission loss. The structure can effectively integrate varied function device units, reduce the interconnection loss among the devices and improve the propertiesof the whole module while improving the density and integration of packaging and reducing the cost of packaging.

The present invention discloses a three-dimensional integrated packaging based on a millimeter wave antenna and a silicon-based multi-channel component. The packaging comprises a radiation layer, wherein the radiation layer is a micro-strip patch antenna array; a high resistivity silicon substrate with a TSV feeding structure; a dielectric wiring layer with microwave wirings and digital wirings; asurrounding frame with a TSV three-dimensional vertical transmission structure and an air-tightness packaging cover plate with a TSV transmission structure. According to the packaging, by integratingthe micro-strip patch antenna array, microwave chip(s), digital chip(s) and passive device(s) in a same module via a MEMS process at the same time, the middle part of the surrounding frame has the TSV structure capable of realizing vertical transmission of microwave signal(s), so that integration degree is relative high, the microwave properties are good, the multi-functionalization and the miniaturization of the components can be realized.

The invention relates to the microwave chip eutectic technology and discloses a device used for realizing microwave chip eutectic pressurization. The device specifically comprises a substrate limiter, a chip limiter and a point contact press block, wherein the chip limiter is provided with a chip limit hole, the dimension of the chip limit hole is in matching with the dimension of a chip and is used for limiting the chip, the lower surface of the chip contacts with an upper surface of a substrate through a welding tab, the bottom board of the point contact press block is provided with micro supporting columns, the quantity of the micro supporting columns is smaller than or equal to the quantity of welding pads on the upper surface of the chip, positions of the micro supporting columns and positions of the welding pads on the upper surface of the chip are in mirror symmetric relationship, and the micro supporting columns on the point contact press block contact with the welding pads on the upper surface of the chip. When the chip and the substrate are in an eutectic state, on the point contact press block, only the micro supporting columns and the welding pads on the surface of the chip mutually contact, so a special structure such as an air bridge on the surface of the microwave chip can be prevented from being damaged. The invention further discloses a microwave chip eutectic pressurization method.

The invention discloses a microwave TR (Transmitter-Receiver) assembly with an ultra-wide working bandwidth. A transmitting link and a receiving link consist of a bidirectional amplifier, a one-to-four power divider and eight TR channels communicated with antennas; each TR channel comprises a power amplifier, an isolator, a transceiving switch chip, an amplitude limiter, a first-stage low-noise amplifier, and a multifunctional chip, a transmitting signal adjustable phase shifter, a transmitting signal driving amplifier, an adjustable attenuator, a receiving signal adjustable phase shifter anda second-stage low-noise amplifier which are integrated on the LTCC multilayer circuit substrate; a multifunctional chip is integrated on an LTCC multilayer circuit substrate; the number of microwavechips and interconnection circuits thereof are reduced as much as possible; meanwhile, the microwave grounding continuity of the LTCC multilayer circuit substrate is better, the working bandwidth is wider, the adjustable phase shifter and the adjustable attenuator arranged in each transmitting and receiving channel are combined to fix and adjust the phase and amplitude of signals, and the amplitude and phase consistency of transmitting and receiving signals of each TR channel is ensured.

The invention relates to an LTCC-based miniaturized tile type T / R assembly. By means of a conventional medium material, through reasonable layout of a microwave chip, a microwave transmission line and a control signal line, the miniaturized tile type T / R assembly which has a dimension of 9 mm * 9 mm * 4.3 mm, has high integration and facilitates conformation. The LTCC-based miniaturized tile type T / R assembly solves the problems of large dimension and difficulty in actual application and the like of a conventional T / R assembly, enables the T / R assembly to have higher integration, enables a current phased array to have the advantages of miniaturization, conformal to environment and the like, and satisfies the demands of special platforms such as a vehicular-mounted platform and the like.

The present invention relates to a chip test fixture. The chip test fixture comprises a base and a fine adjustment structure; the base is provided with an accommodating structure; the accommodating structure is used for accommodating a calibration component and a chip supporting plate and can make the calibration component contact with the chip supporting plate; a microwave chip to be tested can be welded onto the surface of the chip supporting plate; the fine adjustment structure is installed on the base; and the fine adjustment structure is used for adjusting and fixing the positions of the calibration component and the chip supporting plate. According to the chip test fixture and the chip test system of the invention, the positions of the calibration component and the chip supporting plate can be adjusted and fixed through the accommodating structure and the fine adjustment structure; and the calibration component can be aligned with the microwave chip to be tested on the chip supporting plate, and after the calibration component and the chip supporting plate are fixed, the calibration component and microwave chip to be tested can be kept fixed without manual operation required, and therefore, shake caused by manual operation can be avoided, and thus, test accuracy can be improved, and damage to the microwave chip can be avoided.

The invention discloses a three-dimensional integrated millimeter wave AiP phased array element. A millimeter wave microstrip patch antenna array layer, an antenna feed network layer, a millimeter wave signal transmitting and receiving circuit layer, a millimeter wave signal three-dimensional vertical transmission layer, a millimeter wave circuit shielding layer, a power division network and digital signal layer and a bottom BGA signal input layer are sequentially arranged from the top layer to the bottom layer. According to the invention, a silicon semiconductor integrated packaging process and a glass wiring process are adopted, passive devices such as a millimeter wave microstrip patch antenna, a feed network, a microwave chip, a digital chip, an IPD and the like are packaged into a miniaturized three-dimensional integrated millimeter wave AiP phased array element, and input and interlayer vertical transmission of millimeter wave signals are realized by utilizing high-density integrated BGA, TSV and Bump.

The invention discloses a silicon-based multichannel TR assembly. The silicon-based multichannel TR assembly, in the structure, comprises a multilayer silicon-based substrate 1 with signal transmission, passive element integration and chip carrier, a microwave single chip integrated circuit and a digital integrated circuit 2 for realizing various specific functions of the TR assembly, and a high-resistivity silicon cap 3 whose top is used for sealing and protection, wherein the multilayer silicon-based substrate at least comprises three layers of metal wiring, metal adopts a Cu material, the silicon-based surface uses multiple layers of dielectric materials with a low dielectric constant for isolation between metal layers and surface passivation protection, multiple through silicon vias (TSV) are made inside the silicon-based substrate as cooling channels for microwave chip grounding and inner high-power consumption elements and key parts for microwave signal vertical transmission; and external control and microwave interfaces are arranged around the silicon-based material. The silicon-based multichannel TR assembly and the design method have the advantages that a multichannel TR assembly within 40 GHz can be realized, the microwave performance is excellent, and miniaturization and low cost of the TR assembly can be realized.

The invention relates to the field of microwave photons and radio over fiber, and provides a direct-adjustment analog electro-optical conversion integrated component. The component comprises a microwave chip, a high-speed laser chip, a microwave matching network, a temperature regulation and control unit, a coupling lens, a control circuit unit, a radio frequency input port and an optical output port, hybrid integrated assembly in a shielding shell is achieved through adoption of a micro-assembly process, electric signals and optical signals are respectively interconnected among all the components through lead bonding, lens coupling and the like, and radio frequency microwave signals received from a microwave matching network are loaded to the optical signals to achieve electro-optical conversion, so that the radio frequency signals are modulated on the optical signals to be output through an optical output port. According to the invention, the integrated integration of the electro-optical conversion component is achieved by using the micro-assembly process, the cost, the volume and the weight are greatly reduced, and the integration degree, the expandability and the reliability are improved.

The invention relates to the technical field of radio over fiber, and discloses an external modulation radio frequency electro-optical conversion integrated assembly. The device comprises a microwavechip unit, a laser unit, a coupling lens, a modulator unit, a temperature regulation and control unit and a control circuit unit, and the microwave chip unit is connected with the modulator unit through a microstrip line and provides radio frequency microwave signals for the modulator unit; The laser unit is sequentially connected with the coupling lens and the modulator unit and provides an optical signal for electro-optical conversion for the modulator unit; The modulator unit loads the radio frequency microwave signal into an optical signal to realize electro-optical conversion; Wherein thetemperature regulation and control unit is used for carrying out stable temperature control on the laser unit, and the control circuit unit is respectively connected with the temperature regulation and control unit, the laser unit and the modulator unit. According to the technical scheme, the cost, the size and the weight are greatly reduced, and the integration level, the expandability and the reliability are improved.

The invention discloses a method for preparing an SOI silicon chip by means of laser chip breaking technology, wherein the method belongs to the technical field of semiconductor material preparation. The method is characterized in that a silicon chip is used as a raw material; a bonding chip with an H<+> implanted layer is obtained through technological processes of oxidation, H<+> implantation and bonding; and after the bonding chip is processed according to the laser chip breaking technology, the required SOI silicon chip is obtained. Compared with microwave chip breaking technology, the method according to the invention is advantageous in that chip breaking is performed in a laser heating manner, thereby eliminating disadvantages of crystal lattice defect caused by a hydrogen ion implantation layer and eliminating surface absorption substances, and furthermore improving silicon chip surface roughness.

The invention discloses a design method for a pre-stage solid-state microwave source of a low-hybrid wave system, wherein an output end of a lock phase source is successively connected to a first-level power amplifier, a program-control voltage attenuator, a PIN rapid-control switch, a second-level power amplifier and a power divider; two output ends of the power divider are power output ends; a coupler adopts a micro-strip coupling form; a coupling output end of the coupler is used as a reference phase; a direct-through output end of the coupler is connected to a wave detection module; an output end of the wave detection module is connected to a control module; and an output end of the control module is connected to the program-control voltage attenuator and the PIN rapid-control switch respectively. The method disclosed by the invention is characterized in that an original three-level power amplifier structure is replaced by a two-level power amplifier structure; and output can reach 5W which is higher than the output of the three-level power amplifier structure because of increase of output power of the lock phase source and development of solid-state microwave chip technologies. The integration level, gains and power become higher.

The invention discloses a down-conversion system of multi-channel broadband. A four-channel broadband microstrip filter set, a mixing circuit and an intermediate frequency signal regulating circuit are integrated in the system, and the 4GHz-12GHz segmenting filtering and down-conversion function is completed. The high and low local oscillator combined frequency conversion mode is adopted for the down-conversion system, the intermediate frequency is 1.9214 GHz, 4GHz-12GHz radio frequency is input through the four channels to respectively perform pre-selection filtering on input signals, and mirror image interference is eliminated. Then, gating is performed through a microwave chip SP4T switch based on secondary packaging, the signals subjected to the gating are transmitted to the mixing circuit so that intermediate frequency signal can be obtained, and the signals are uniformly output after being regulated. In the segmenting switch switching mode, radio frequency signals are subjected to segmenting filtering, and interference of mirror image signals is reduced. The high and low local oscillator combined mode is adopted, namely, 5.9214-10.0786 GHz local oscillator signals are adopted, local oscillator resources are saved, and the 4-12 GHz mirror image suppression down-conversion function can be achieved under PXI single-groove size.

The invention discloses a thin-film lithium niobate-based heterogeneous integrated microwave photon transceiver chip, which belongs to the technical field of integrated microwave photons and mainly comprises a radio frequency conversion switch, a low-noise amplifier circuit, a power amplifier circuit, a laser, an electro-optical modulator, a photoelectric detector, an optical path conversion switch and an optical delayer, heterogeneous integration of a radio frequency transmit-receive front end, electro-optic / photoelectric conversion and an optical delay chip is realized. Optical chips are connected through thin film lithium niobate-based optical waveguides, and three-dimensional heterogeneous integration is realized between an optical chips and a microwave chip through metal bump bonding,through hole interconnection and other processes. The chips can realize microwave transceiving and wave beam control functions based on a photon technology, has the advantages of miniaturization, high integration level, stable performance and the like, and meets the large-scale array application requirements of a transceiving front end of a microwave photon radar system.

The invention discloses a method for preparing a high-power microwave chip type multilayer ceramic dielectric capacitor. The method comprises the following steps of: carrying out printing for multiple times with a traceless printing method to form an attached chip of the capacitor; printing a designed inner electrode paste figure on the attached chip, and forming an inner electrode membrane layer of multiple capacitors after carrying out drying; carrying out drying after printing a layer of ceramic dielectric paste membrane on a ceramic dielectric layer with an inner electrode layer by use of the traceless printing method; placing a designed staggering bar in the inner electrode extraction direction of the capacitors; carrying out drying after printing another inner electrode membrane layer of the capacitors by the process; repeating the processes to form another attached chip of the capacitor; and carrying out row adhesion, cutting, sintering, end barreling, terminal electrode preparation, and terminal electronickelling, electrotinning and the like. The method aims at solving the problems that power loss and high-frequency insertion loss caused by the inner electrode loss of the existing chip type multilayer ceramic dielectric capacitor are great, and the capacitor is liable to being broken down and burnt by currents in a high voltage pulse and a microwave high-power circuit.

The invention discloses a microwave-chip wax injection machine which comprises a workbench and a chain plate transmission mechanism embedded in the workbench, wherein the chain plate transmission mechanism comprises a transmission chain plate used for transmitting a wax injection mould; a feeding pushing arm and a mould detection sensor are arranged on one side of the transmission chain plate, and a mould positioning platform is arranged on the other side of the transmission chain plate; synchronous clamping blocks synchronously telescoping are respectively arranged on the two sides of the mould positioning platform, and a pressing-down plate moving up and down is arranged above the mould positioning platform; a wax vat is arranged on the side, opposite to the mould positioning platform, of the transmission chain plate, and the wax vat is provided with a wax mouth used for injecting wax to the wax injection mould. The microwave-chip wax injection machine can realize precise wax injection for the wax injection moulds with different specifications and has the advantages of being high in automation degree and high in wax injection efficiency.

The invention relates to a device and a method for testing and calibrating a microwave chip. The device comprises a base, a printed circuit board, a connector, a wave absorbing material and a cover plate. An open cavity is formed in an upper end face of the base, the printed circuit board is placed in the cavity, and radio frequency connectors SMA are installed on both sides of the base; the circuit board is connected with the SMA connectors disposed on the both sides of the base; the wave absorbing material is adhered with the cover plate and is fixed to the upper surface of the base; and thecover plate is connected to the base by screws. According to the device provided by the invention, a calibration piece is designed and manufactured, a calibration end face is corrected from the bothends of a traditional radio frequency cable to the center of a through line, and errors in test data caused by a test fixture are eliminated; and the printed circuit board is adhered in the cavity ofthe base to ensure a large enough grounding area, the wave absorbing material is attached on the top of the printed circuit board to isolate the external electromagnetic radiation, thereby improving the anti-interference ability of the test and making the test data be more stable and reliable.

The invention discloses an electroplating clamp for a compound semiconductor microwave chip, and relates to the technical field of electroplating. The electroplating clamp for the compound semiconductor microwave chip comprises a bottom plate, lifting devices are arranged on the two sides of the top of the bottom plate, a connecting rod is fixedly connected to one side of each lifting device, a transverse rod is fixedly connected to the bottom of each connecting rod, a clamp body is arranged in the middle of each transverse rod, each clamp body comprises a limiting frame, actuating rods are movably connected to the inner walls of the two ends of each limiting frame, clamping plates are fixedly connected to the ends of the actuating rods, and the ends of the reset springs are fixedly connected to the sides of the clamping plates. Through arrangement of limiting pieces and the clamp bodies, chips can be immersed into an electrolyte through the lifting devices, during electroplating, for example, when an additive or a conductive material such as copper and the like is added into a hole, the limiting rods are used for limiting the limiting frames, thus the limiting frames are kept highly stable, and errors are reduced.

The present invention relates to a microwave chip supporting structure (1, 1', 1'', 1''') comprising a first microwave laminate layer (2, 49), with a first side (3, 50) and a second side (4, 51), and an outer limit (6, 7, 8, 9; 53, 54, 55, 56). At least one conductor (21, 22, 23, 24, 25, 26; 60, 61, 62, 63, 64, 65) is formed on said first side (3, 50), extending towards said outer limit (6, 7, 8, 9; 53, 54, 55, 56). The microwave chip supporting structure (1, 1', 1'', 1''') further comprises a second microwave laminate layer (33, 33'; 57), with a first side (34, 58) and a second side (35, 59), the second side (35, 59) of the second laminate layer (33, 33', 57) being fixed to at least a part of the first side (3, 50) of the first laminate layer (2, 49). The first laminate layer (2, 49) and / or the second laminate layer (33, 33'; 57) comprises at least one recess (10, 36, 66) arranged for receiving a microwave chip (11, 67) intended to be connected to said conductor (21, 22, 23, 24, 25, 26; 60, 61, 62, 63, 64, 65). The second laminate layer (33, 57) extends outside the outer limit (6, 7, 8, 9; 53, 54, 55, 56) of the first laminate layer (2, 49), said conductors (21, 22, 23, 24, 25, 26; 60, 61, 62, 63, 64, 65) continuing on the second side (35, 59) of the second laminate layer (33, 57) without contacting the first laminate layer (2, 49).

The invention discloses an on-chip test DC probe card, and aims at overcoming the defect a traditional DC probe card has a parasitic inductance effect and meeting on-chip test requirements of different microwave monolithic integrated circuits. The on-chip test DC probe card comprises an annular dielectric substrate, DC feed and grounding probes are welded to the upper surface of the substrate, a capacitor is connected to the probes, the DC feed probe is connected with the upper electrode of the capacitor, the grounding probe is connected with the lower electrode of the capacitor, the feed probe is connected to a DC voltage block of a tested chip via the upper electrode of the capacitor, and the grounding problem is connected to a grounding voltage block of the tested chip via the lower electrode of the capacitor. Thus, traditional influence of the DC probe on a test result of the microwave chip is eliminated, and the test performance is improved.

The invention proposes a bottom plate structure suitable for welding of a microwave power chip. The bottom plate structure comprises a bottom surface and a bulge, wherein the bulge is arranged in thecenter of the bottom surface, a part of the bulge is embedded into a microwave cavity, a shell of the bottom plate structure employs a metal material approximate to a thermal expansion coefficient ofthe microwave chip, the interior of a bottom plate is of a hollow structure, a liquid absorption core is filled between the shell of the hollow structure and the shell of the bottom plate structure and is provided with a capillary structure, a working liquid is arranged in the capillary structure, heat generated by the microwave power chip is guided to the bottom plate by a welding surface, a partof the heat is guided out of two sides of the bottom surface of the bottom plate, a part of heat is guided out of the interior space of the bottom plate by the bulge part, repeated circulation of evaporation, convection, condensation, backflow and evaporation is formed by the capillary structure of the liquid absorption core and the working liquid in the capillary structure.

The invention relates to a microwave chip screening device and a screening method therefor. The device comprises a pedestal, a clamping tool equipped with a circuit part and a plurality of power source modules used for power supply are arranged on the pedestal, wherein the circuit part is electrically connected with signal ends and load ends of the power source modules, a power source output port is arranged on a tail part of the pedestal, and a control box is connected with the power source output port. Via the microwave chip screening device and the screening method therefor, lossless testing, high and low temperature screening and power capacity screening of a microwave chip part can be realized; compared with other method, the device is advantageous in that damage-caused scrappage of chips can be lowered; via the device, that all kinds of microwave chip parts are excellent grounding performance and high in applicability can be ensured. The clamping tool installed in the device and the circuit part mounted on the clamping tool can be subjected to fine tuning operation according to size of the microwave chips, and each chip does not need to be redesigned; the microwave chip screening device and the screening method therefor are advantaged by convenience of operation, good universality, low cost and the like.

The invention reveals a welding clamping tool and a method for welding a microwave chip, and belongs to the technical field of chips. The welding clamping tool comprises a clamping tool pedestal and aclamping tool pressing plate. The clamping tool pedestal is provided with a plurality of installation grooves, and a side wall of the installation groove is provided with a first step with a first height. A side wall of the first step is provided with a second step with a second height, wherein the second height is less than the first height, and the second step is used for limiting the microwavechip. The first step is used for limiting a carrier which needs to be welded to the microwave chip. The clamping tool solves a problem that the welding efficiency of a microwave chip is low in the prior art.

The invention relates to a device, a system and a method for the full-band signal quality detection of a microwave chip, belongs to the technical field of chip testing, and solves the problem of nondestructive testing of the microwave chip. The device comprises a test harness, a microwave input port, a microwave output port and a control unit, wherein the test harness is used for lossless installation of a microwave chip to be tested; the microwave input port is externally connected with a microwave signal source and is used for providing a reference signal source for the microwave chip to betested; the microwave output port is externally connected with a spectrum analyzer and is used for outputting microwave signals generated by the microwave chip to be tested to the spectrum analyzer for signal analysis; the control unit comprises at least one control input port and is used for receiving a control instruction, generating a frequency control word covering the full frequency band of the microwave chip and controlling the microwave chip to be tested to output a microwave signal with a corresponding frequency. The device is low in manufacturing cost and simple in structure; and thetest process is simple and convenient and is suitable for batch test.

The invention discloses a eutectic soldering process method of a microwave chip. The eutectic soldering process method comprises the steps of 1, cleaning and drying a carrier; 2, performing plasma cleaning on the carrier; 3, setting a eutectic soldering parameter; 4, placing and fixing the carrier; 5, placing a pre-formed gold-tin soldering lug; 6, placing the microwave chip; 7, adjusting a position of a quartz air duct; 8, performing eutectic soldering on the microwave chip; and 9, detecting soldering quality. The eutectic soldering process method of the microwave chip is simple to operate, is high in safety, has universality and is suitable for production of various types of products on a small scale.

The invention discloses a precise constant current source circuit, and belongs to the technical field of radio frequency microwaves. The precise constant current source circuit comprisesa step-up and step-down power supply chip with a step-up and step-down function, a power supply input filter capacitor, a divider resistor, a feedback circuit, a power supply output filter capacitor, a load, a microprocessor internally provided with an ADC module and a digital potentiometer, wherein the feedback circuit comprises a sampling resistor and an operational amplifier. Compared with a traditional constant current source circuit, the precise constant current source circuit is simple in implementation mode, high in current precision and capable of achieving the purpose that the current required by a radio frequency microwave chip jumps rapidly; and meanwhile, output of different currents is controlled through the microprocessor, current limiting value protection is achieved, and the requirement of a more universal constant current source can be met.

The invention provides a microwave chip eutectic welding platform and a eutectic welding method, and belongs to the technical field of chip packaging. The microwave chip eutectic welding platform comprises a shell, a heating platform and a working platform, wherein the top end of the shell is open, the heating platform is arranged in the shell and used for being electrically connected with an external power source, the working platform is arranged in the shell, the bottom face of the working platform is attached to the top face of the heating platform, a plurality of working areas are arrangedon the top surface of the working platform and are respectively used for sticking metal carriers with different sizes, vacuum adsorption holes used for being communicated with a vacuum pump pipelineare formed in the multiple working areas respectively, the vacuum adsorption holes are used for adsorbing the metal carriers, and the hole sizes of the vacuum adsorption holes in all the working areasare in direct proportion to the sizes of the attaching faces of the metal carriers. The microwave chip eutectic welding platform provided by the invention is suitable for welding operation of different types of microwave chips. The invention further provides an eutectic welding method.

The invention belongs to the field of information communication, and particularly relates to a personnel location system based on an active radio frequency identification device (RFID) integrated component. The personnel location system based on the active RFID integrated component is characterized by comprising an active integrated component, a network device, a server, a work terminal computer, an alarming machine and a video monitoring part, the active integrated component comprises an electronic label and a receiver, the active integrated component is connected with the alarming machine, the active integrated component is connected with the video monitoring part. The electronic label is worn by a to-be-located person and is provided with a label number in a one-to-one corresponding mode. The electronic label is a circulation gain electronic label. The receiver is a 2.4 G long-distance receiver. A microwave chip technology of 0.18 muM is used in the active integrated component.