Electroplating clamp for compound semiconductor microwave chip

Abstract

The invention discloses an electroplating clamp for a compound semiconductor microwave chip, and relates to the technical field of electroplating. The electroplating clamp for the compound semiconductor microwave chip comprises a bottom plate, lifting devices are arranged on the two sides of the top of the bottom plate, a connecting rod is fixedly connected to one side of each lifting device, a transverse rod is fixedly connected to the bottom of each connecting rod, a clamp body is arranged in the middle of each transverse rod, each clamp body comprises a limiting frame, actuating rods are movably connected to the inner walls of the two ends of each limiting frame, clamping plates are fixedly connected to the ends of the actuating rods, and the ends of the reset springs are fixedly connected to the sides of the clamping plates. Through arrangement of limiting pieces and the clamp bodies, chips can be immersed into an electrolyte through the lifting devices, during electroplating, for example, when an additive or a conductive material such as copper and the like is added into a hole, the limiting rods are used for limiting the limiting frames, thus the limiting frames are kept highly stable, and errors are reduced.

Description

Technical field [0001] The present invention relates to the field of electroplating technology, in particular for a compound semiconductor microwave chip electroplating fixture. Background technique [0002] Conventional through-hole electroplating is made of silicon venting by electroplating, and the electroplating method is filling through holes thereof, and the process is simple, but for deep and relatively large through holes, it is true to achieve Defect filling is not easy, the main problems are: a centralized phenomenon at the power line at the mouth; there is a difference in metal ion concentration of the aperture and the void. Therefore, during the electroplating process, the conductive material such as metal copper is difficult to deposit in the bottom, which is easy to cause premature sealing of the through hole, causing the intake defect. [0003] 5G microwave chip is the weight of the current chip development industry, 5G microwave chip requires high intensity than t...

AI Technical Summary

Problems solved by technology

[0002] The traditional through-hole electroplating is to fill through-silicon holes by electroplating. Filling through-holes by electroplating has advantages in cost and simple process, but for through-holes with large depth-to-width ratios, it is difficult Defect filling is not easy. The main problems are: the concentration of electric force lines at the hole; the difference in the concentration of metal ions at the hole and the bottom of the hole.

Therefore, during the electroplating process, conductive materials such as metallic copper are difficult to deposit on the bottom, which can easily lead to premature sealing of through holes, resulting in defects in the holes

[0003] 5G microwave chips are the top priority in the current chip development industry. Compared with traditional chips, 5G microwave chips need to be highly integrated, which is equivalent to adding more communication antennas inside. The various process requirements of chips are different. Improvement, the through-hole plating of traditional chips is no longer suitable for 5G microwave chips, because the diameter of the through-holes used on 5G microwave chips is smaller and the accuracy is higher. The diameter of the hole is extremely small, and slight deviations will lead to chip defects. Therefore, in the process of through-hole plating, the chip needs to maintain a high degree of stability. For this reason, this invention proposes a new solution

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