Method for preparing SOI silicon chip by means of laser chip breaking technology

A technology of silicon wafers and splits, which is applied in the field of preparing SOI silicon wafers by using laser splitting technology, which can solve the problems that the temperature cannot be controlled and adjusted, and cannot be industrialized, so as to eliminate lattice defects, improve surface roughness, and remove surface adsorption substances. Effect

Inactive Publication Date: 2017-07-28
SHENYANG SILICON TECH
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  • Abstract
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Problems solved by technology

However, for the process of microwave splitting, it is currently carried out in the laboratory. It can only be operated on one silicon wafer at a ti...

Method used

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  • Method for preparing SOI silicon chip by means of laser chip breaking technology
  • Method for preparing SOI silicon chip by means of laser chip breaking technology
  • Method for preparing SOI silicon chip by means of laser chip breaking technology

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Embodiment 1

[0024] 1. Take an 8-inch P-type silicon wafer, its crystal orientation can be selected from or , and its resistivity can be selected from light doping to high resistance.

[0025] 2. Preparation of oxide layer (silicon dioxide) on the silicon wafer: oxidize one surface of the silicon wafer in step 1 (or both wafers can be oxidized, according to the actual process conditions) to obtain a silicon wafer with an oxide layer (Silicon dioxide is used as the BOX layer of SOI), the oxidation adopts a conventional process, and the thickness of the prepared oxide layer (silicon oxide) is >0-1000nm; the prepared silicon wafer with an oxide layer is cleaned with SC1 and SC2 in turn to remove the silicon wafer Surface contamination, and then use the test equipment to test the surface particles of the silicon wafer, use the test equipment to test the thickness of the silicon oxide and other parameters (such as the particles of the silicon oxide layer, electrical parameters), select the sili...

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Abstract

The invention discloses a method for preparing an SOI silicon chip by means of laser chip breaking technology, wherein the method belongs to the technical field of semiconductor material preparation. The method is characterized in that a silicon chip is used as a raw material; a bonding chip with an H<+> implanted layer is obtained through technological processes of oxidation, H<+> implantation and bonding; and after the bonding chip is processed according to the laser chip breaking technology, the required SOI silicon chip is obtained. Compared with microwave chip breaking technology, the method according to the invention is advantageous in that chip breaking is performed in a laser heating manner, thereby eliminating disadvantages of crystal lattice defect caused by a hydrogen ion implantation layer and eliminating surface absorption substances, and furthermore improving silicon chip surface roughness.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a method for preparing SOI silicon wafers by using laser slicing technology. Background technique [0002] In 1980, IBM developed the application of oxygen ion implantation (Separation by ImplantationOxygen, SIMOX) to develop and manufacture SOI materials. This process requires implantation of very high doses of oxygen ions (approximately 5 × 10 18 / cm 2 ), although a silicon dioxide layer is formed through high temperature annealing treatment, and most of the defects are eliminated by re-cleaning, it still cannot completely eliminate the defects caused by implanted ions. By 1992, a French research-oriented company, Commossariat Al'Energie Atomique, was able to successfully transfer thin films of silicon single crystals to another using a thin-film transfer technique called Smart Cut. on a silicon substrate. In this process, hydrogen ions are first ...

Claims

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Application Information

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IPC IPC(8): H01L21/762B23K26/53
CPCH01L21/76259B23K26/53
Inventor 刘洋
Owner SHENYANG SILICON TECH
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