The invention discloses an ion implantation and deposit method of high-power composite pulse by magnetic control sputtering, which belongs to the field of material surface treatment technology and solves the problems of large particles and low film deposit efficiency in an adopted method in which negative high voltage pulse is applied to a workpiece. The method disclosed by the invention comprises the steps of: 1. placing the workpiece on a sample platform in a vacuum chamber, connecting the workpiece with a high-voltage pulse power supply, and connecting a magnetic control sputtering target source with a magnetic control sputtering power supply; and 2. implanting and depositing: when the vacuum degree in the vacuum chamber is lower than 10-2Pa, introducing working gas until the vacuum degree in the vacuum chamber reaching 0.011-10 Pa, starting up the high-voltage pulse power supply, adjusting the voltage value of output pulse of the high-voltage pulse power supply to 0.5-100kV, adjusting the pulse frequency to 0-1000Hz, adjusting the pulse width to 0-500 microseconds, starting up the magnetic control power supply, adjusting required process parameters by direct-current luminance pre-ionization, and controlling the voltage phase difference of the two power supplies to be -1000-1000 microseconds to perform the ion implantation and deposit.