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Ion implantation and deposit method of high-power composite pulse by magnetic control sputtering

A technology of magnetron sputtering and compound pulse, which is applied in the field of high-power compound pulse magnetron sputtering ion implantation and deposition, can solve the problems of low film deposition efficiency, achieve the effects of less defects, increased deposition rate, and improved performance

Active Publication Date: 2010-09-22
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to solve the problem of using the pulsed cathode arc plasma source as the metal plasma source, and the method of applying negative high-voltage pulses on the workpiece causes large particles in the film; the use of DC power supply mode magnetron sputtering technology leads to film deposition efficiency Low-problem, high-power composite pulsed magnetron sputtering ion implantation and deposition method provided

Method used

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  • Ion implantation and deposit method of high-power composite pulse by magnetic control sputtering
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  • Ion implantation and deposit method of high-power composite pulse by magnetic control sputtering

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specific Embodiment approach 1

[0017] Specific implementation mode one: the following combination figure 1 with figure 2 Describe this embodiment. The device used in the high-power composite pulse magnetron sputtering ion implantation and deposition method in this embodiment includes a high-voltage pulse power supply 1, a pulse synchronization matching device 2, a magnetron sputtering power supply 3, and a magnetron sputtering target source 4 , vacuum chamber 5 and sample stage 6,

[0018] The method includes the following steps:

[0019] Step 1. Place the workpiece to be processed on the sample stage 6 in the vacuum chamber 5, connect the workpiece to the high-voltage pulse output end of the high-voltage pulse power supply 1, and connect the magnetron sputtering target source 4 installed on the vacuum chamber 5 to the magnetron sputtering The high-power pulse output terminal of the power supply 3,

[0020] Step 2, injection and deposition: vacuumize the vacuum chamber 5 until the vacuum degree in the v...

specific Embodiment approach 2

[0031] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device used in the method also includes a high-voltage pulse waveform oscilloscope 7 and a magnetron sputtering power supply pulse waveform oscilloscope 8, and the high-voltage pulse waveform oscilloscope 7 is used to display high-voltage The pulse voltage and current waveforms from the pulse power supply 1, and the pulse waveform oscilloscope 8 of the magnetron sputtering power supply are used to display the high-voltage pulse voltage and current waveforms from the magnetron sputtering power supply 3, and the others are the same as those in Embodiment 1.

specific Embodiment approach 3

[0032] Specific implementation mode three: the following combination image 3 Describe this embodiment, the difference between this embodiment and Embodiment 1 is that when coating, the high-voltage pulse power supply 1 is turned on, and the pulse synchronous matching device 2 delays turning on the magnetron sputtering power supply according to the high-voltage synchronous trigger signal output by the high-voltage pulse power supply 1 3. Others are the same as the first embodiment.

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Abstract

The invention discloses an ion implantation and deposit method of high-power composite pulse by magnetic control sputtering, which belongs to the field of material surface treatment technology and solves the problems of large particles and low film deposit efficiency in an adopted method in which negative high voltage pulse is applied to a workpiece. The method disclosed by the invention comprises the steps of: 1. placing the workpiece on a sample platform in a vacuum chamber, connecting the workpiece with a high-voltage pulse power supply, and connecting a magnetic control sputtering target source with a magnetic control sputtering power supply; and 2. implanting and depositing: when the vacuum degree in the vacuum chamber is lower than 10-2Pa, introducing working gas until the vacuum degree in the vacuum chamber reaching 0.011-10 Pa, starting up the high-voltage pulse power supply, adjusting the voltage value of output pulse of the high-voltage pulse power supply to 0.5-100kV, adjusting the pulse frequency to 0-1000Hz, adjusting the pulse width to 0-500 microseconds, starting up the magnetic control power supply, adjusting required process parameters by direct-current luminance pre-ionization, and controlling the voltage phase difference of the two power supplies to be -1000-1000 microseconds to perform the ion implantation and deposit.

Description

technical field [0001] The invention relates to a high-power composite pulse magnetron sputtering ion implantation and deposition method, belonging to the technical field of material surface treatment. Background technique [0002] Plasma source ion implantation technology (PBII) was first proposed by Professor J.R.Conrad of the United States in 1987. Later, based on this principle, people combined various ion sources, and through the matching of ion source and high voltage, proposed a method for almost all metals and gases. , and even compound ion implantation and deposition techniques. At present, this technology has been widely used in the surface modification of pistons, punches and other tools and mold workpieces, and is used to inject and deposit various thin films with a certain thickness and good bonding. [0003] At present, there are mainly the following types of devices that can perform plasma source ion implantation and deposition (PBII&D): [0004] The first t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/48
Inventor 田修波吴忠振巩春志杨士勤
Owner HARBIN INST OF TECH
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