Silicon-based multichannel TR assembly and design method

Abstract

The invention discloses a silicon-based multichannel TR assembly. The silicon-based multichannel TR assembly, in the structure, comprises a multilayer silicon-based substrate 1 with signal transmission, passive element integration and chip carrier, a microwave single chip integrated circuit and a digital integrated circuit 2 for realizing various specific functions of the TR assembly, and a high-resistivity silicon cap 3 whose top is used for sealing and protection, wherein the multilayer silicon-based substrate at least comprises three layers of metal wiring, metal adopts a Cu material, the silicon-based surface uses multiple layers of dielectric materials with a low dielectric constant for isolation between metal layers and surface passivation protection, multiple through silicon vias (TSV) are made inside the silicon-based substrate as cooling channels for microwave chip grounding and inner high-power consumption elements and key parts for microwave signal vertical transmission; and external control and microwave interfaces are arranged around the silicon-based material. The silicon-based multichannel TR assembly and the design method have the advantages that a multichannel TR assembly within 40 GHz can be realized, the microwave performance is excellent, and miniaturization and low cost of the TR assembly can be realized.

Description

Technical field [0001] The invention relates to a silicon-based multi-channel TR component and a design method, belonging to the technical field of radio frequency microsystems, and achieving frequencies below 40 GHz. Background technique [0002] In recent years, with the development of active phased arrays toward thinner, lighter, high-frequency, and multi-functional trends, the requirements for system integration have become more and more urgent, and the demand for conformal phased arrays requires TR components. The development of ultra-thin direction. Traditional TR components are generally developed based on multilayer substrate technology. The multilayer substrate technology is mainly a thick film process with a line width of the order of mm. If higher precision requirements are required, it will inevitably lead to a sharp drop in yield and a sharp cost. Elevated. At the same time, the limitation of processing accuracy also affects the volume of the component to a certain...

AI Technical Summary

Problems solved by technology

Traditional TR components are generally developed based on multi-layer substrate technology. Multi-layer substrate technology is mainly a thick film process with a line width of the order of mm. If higher precision is required, it will inevitably lead to a sharp drop in yield and sharp cost. raised

At the same time, the limitation of processing accuracy also affects the volume of the component to a certain extent. Therefore, the problem existing in the prior art is that the TR component designed with a multi-layer substrate cannot further reduce the volume.

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