The present invention provides a multilayer structure including a substrate having formed on a surface thereof at least one period of individual layers, the period having at least two layers including a first layer which includes magnesium silicide and a second layer which includes at least one of tungsten, tantalum, cobalt, nickel, copper, iron, chromium, alloys, oxides, borides, silicides, and nitrides of these elements, silicon, carbon, silicon carbide, boron, and boron carbide. If the period includes three layers, the second layer includes one of silicon, carbon, silicon carbide, boron, and boron carbide and a third layer includes one of tungsten, tantalum, cobalt, nickel, copper, iron, chromium, and alloys, oxides, borides, silicides, and nitrides of these elements, the second layer being disposed between the first and the third layers. If the period includes four layers, a fourth layer includes one of silicon, carbon, silicon carbide, boron, and boron carbide, the third layer being disposed between the second and fourth layers, and the fourth layer being disposed between the third layer of multilayer period n and the first layer of multilayer period n−1.