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4093 results about "Filler metal" patented technology

A filler metal is a metal added in the making of a joint through welding, brazing, or soldering.

Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing

A method is provided for forming an improved interconnect structure on a semiconductor body. A first metal layer is deposited on the semiconductor body. A sacrificial layer having a height is deposited on the first metal layer. The sacrificial layer and the metal layer are patterned to form separate metal lines with the sacrificial layer remaining on said metal lines. A low-k material is then deposited to fill the gaps between metal lines and to cover the sacrificial layer. The low-k material is then removed to a level within the height of the sacrificial layer. The sacrificial layer is then removed. A protective layer is deposited on top of the metal lines and the low-k material. A dielectric layer is deposited over the protective layer. The protective layer protects the low-k material from attack by chemicals utilized by subsequent process steps to etch vias in the dielectric layer, to strip photo-resist, and to clean the vias. The protective layer is then selectively etched away to make contact between a via plug and the metal lines.
Owner:NEWPORT FAB

Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method

A semiconductor manufacturing method includes depositing a low-k dielectric layer, forming a trench in the low-k dielectric layer, forming a barrier layer in the trench, filling a metal on the barrier layer, planarizing the metal, and forming a capping layer on the planarized metal, wherein the capping layer includes at least two layers.
Owner:ASM IP HLDG BV

Brazing-filler material and method for brazing diamond

When a diamond is brazed to a metal substrate, while obtaining a stable joining strength, a joined interface of the diamond is not eroded to provide a good joint with a beautiful view. A brazing-filler material containing at least one selected from a group consisting of gold and silver, and copper as principal components, and further containing 0.001 to 5 mass % of vanadium is used. Preferably, a vanadium content is not more than 2.0 mass %, and more preferably not more than 0.5 mass %. Using this brazing-filler material, unidirectional solidification is performed from a side of diamond to form vanadium carbide in a joined interface in a shape of islands, and thereby an interface having a beautiful view with stable joining strength can be obtained. In addition, strong joining is possible also by a usual solidification method.
Owner:HOHOEMI BRAINS INC

Packaging types of light-emitting diode

A LED packaging process is to place LED chips at predetermined positions on the printed circuit board substrate, followed by drilling holes to penetrate the substrate, followed by passing the printed circuit board through the solder furnace to completely fill the through-hole position with solder points, followed by using molds to make the soldering points into a groove reflector, followed by placing LED chips in the groove reflector, followed by wire bonding and using encapsulation resin for packaging to form SMD LED with reflectors. In the present invention, the filling with metal conductor in electrode through holes on the printed circuit board to form the groove reflector can enhance the heat dissipation of LED and the brightness of LED, which has the advantageous effects that traditional SMD LED can not have.
Owner:SOLIDLITE CORP

Apparatus and method for friction stir welding using filler material

A friction stir welding tool includes a body having an upper surface defining an entrance opening and a lower surface, and a pin having a lower surface defining an exit opening, wherein the pin extends from the lower surface of the body. The friction stir welding tool further includes a passageway defined by the body and the pin from the entrance opening to the exit opening and is capable of allowing a filler material to pass therethrough. A friction stir welding method includes applying a frictional heating source to a workpiece to plasticize a volume of the workpiece and applying the frictional heating source to to a filler material to plasticize the filler material. The method further includes introducing the filler material into the volume of the workpiece and incorporating the filler material into the volume of the workpiece.
Owner:LOCKHEED MARTIN CORP

Process equipment wear surfaces of extended resistance and methods for their manufacture

A method for producing process equipment having a wear surface having extended resistance to one or more of abrasion, erosion, or corrosion, associated with fillers or solids processed by said process equipment includes applying to said process equipment wear surface a metal matrix coating filled with superabrasive particles. Diamond and cubic boron nitride superabrasive particles can fill the metal matrix, which can be a nickel coating.
Owner:DIAMOND INNOVATIONS INC

Dual damascene process for carbon-based low-K materials

A method for forming a dual damascene structure in a carbon-based, low-K material. The process begins by providing a semiconductor structure having a first metal pattern thereover, wherein the first metal pattern has a first barrier layer thereon. An organic dielectric layer is formed on the first barrier layer, and a hard mask layer is formed on the dielectric layer. The hard mask layer and the dielectric layer are patterned to form a trench. A second barrier layer is formed over the hard mask layer and on the bottom and sidewalls of the trench. A barc layer is formed over the second barrier layer, thereby filling the trench. The barc layer, the second barrier layer, and the dielectric layer are patterned to form a via opening, preferably using a photoresist mask. The barc layer is patterned without faceting the edges of the via opening due to the second barrier layer. The barc layer and the etch mask are removed by the dielectric layer etch. The first barrier layer and the second barrier layer are removed. A third barrier layer is formed on the bottom and sidewalls of the trench, on the sidewalls of the via opening, and on the first metal pattern through the via opening. The trench and the via opening are filled with metal to form a damascene structure.
Owner:TAIWAN SEMICON MFG CO LTD

Gastric filler devices for obesity therapy

An obesity treatment device comprises a filament filler material movable between a substantially straight insertion / removal configuration and an operative configuration in which the filament extends along a predetermined curve to occupy a selected volume within the stomach and a retrieval device connected to a proximal end of the filler material facilitating grasping and withdrawal of the filler material. A method of treating obesity, comprises inserting to a desired position within the GI tract a filament filler in a substantially straight configuration and moving the filler into an operative configuration in which the filler curves along a predetermined path to define a desired volume in combination with, after a predetermined treatment period has elapsed, collapsing the filler into the substantially straight configuration for trans-oral removal.
Owner:BOSTON SCI SCIMED INC

Method for welding workpieces made of highly heat-resistant superalloys, including a particular mass feed rate of the welding filler material

A welding method for welding workpieces made of highly heat-resistant superalloys is provided. The method includes generating a heat input zone on the workpiece surface by means of a heat source, feeding welding filler material into the heat input zone by means of a feeding device, and generating a relative motion between the heat source and the feeding device on one hand and the workpiece surface on the other hand by means of a conveying device. Furthermore, according to the welding method, the mass feed rate is ≦350 mg / min.
Owner:SIEMENS AG +1

System and method for limiting increase in capacitance due to dummy metal fills utilized for improving planar profile uniformity

Systems and methods for limiting capacitance increase due to dummy fill metals utilized to improve planar profile uniformity are disclosed. A computer-automated method for locating dummy fills in an integrated circuit fabrication process generally comprises reading a layout file specifying layout of the integrated circuit, designating at least one net of the integrated circuit as a critical net, the critical nets being only a subset of all nets of the integrated circuit, identifying metal conductors corresponding to each designated critical net from the layout file, delineating a net blocking exclusion zone extending a distance of a minimum net blocking distance (NBD) from the metal conductor for each metal conductor identified, and locating the dummy fills outside of the net blocking exclusion zone.
Owner:SYNOPSYS INC

Superfilled metal contact vias for semiconductor devices

In accordance with one aspect of the invention, a method is provided for fabricating a semiconductor element having a contact via. In such method, a hole can be formed in a dielectric layer to at least partially expose a region including at least one of semiconductor or conductive material. A seed layer can be deposited over a major surface of the dielectric layer and over a surface within the hole. In one embodiment, the seed layer can include a metal selected from the group consisting of iridium, osmium, palladium, platinum, rhodium, and ruthenium. A layer consisting essentially of cobalt can be electroplated over the seed layer within the hole to form a contact via in electrically conductive communication with the region.
Owner:GLOBALFOUNDRIES US INC

Superalloy Repair Welding Using Multiple Alloy Powders

A method of welding a gas turbine engine substrate composed of a gamma prime precipitation strengthened nickel based superalloy, including the steps of: applying weld beads on the substrate to form a continuous layer the thickness of the weld beads; using a filler material made of a first material exhibiting comparable strength and ductility as the substrate, and a second material exhibiting greater ductility than the substrate; and creating crack propagation mitigating regions within the continuous layer by increasing the percentage of the second material in the crack propagation mitigating regions over the percentage of the second material in the remainder of the continuous layer.
Owner:SIEMENS ENERGY INC

Crack free metallic articles

A containerless method of producing a crack free metallic article of near-net shape includes melting a filler material into a metallic substrate or seed under conditions chosen to preclude cracking. In a preferred embodiment of the invention, a laser beam is operated at a relatively low power density and at a relatively large beam diameter at the substrate surface for an extended length of time to produce a molten pool with a low aspect ratio. Near-net shape is achieved by applying the process in a closed-loop, multi-axis material deposition system.
Owner:UNITED TECH CORP

Devices and methods of forming VFET with self-aligned replacement metal gates aligned to top spacer post top source drain EPI

Devices and methods of fabricating vertical field effect transistors on semiconductor devices are provided. One intermediate semiconductor includes: a substrate, a bottom spacer layer above the substrate, a plurality of fins, wherein at least one fin is an n-fin and at least one fin is a p-fin; a high-k layer and a work function metal over the bottom spacer layer and around the plurality of fins; a top spacer above the high-k layer and the work function metal and surrounding a top area of the fins; a top source / drain structure over each fin; a dielectric capping layer over the top source / drain structure; a fill metal surrounding the work function metal; and a liner.
Owner:GLOBALFOUNDRIES US INC

Interconnect structure with gas dielectric compatible with unlanded vias

A multilevel interconnect structure is formed which uses air as a dielectric between wiring lines and which is compatible with the presence of unlanded vias in the interconnect structure. A layer of carbon is deposited over an insulating surface and then a pattern for trenches is formed in the surface of the layer of carbon. Metal is deposited in the trenches and over the layer of carbon and then a chemical mechanical polishing process is used to define wiring lines. An ashing or etch back process is performed on the carbon layer to recess its surface below the surfaces of the wiring lines. An oxide capping layer is provided over the recessed surface of the carbon and the wiring lines, for example using HSQ and curing, and then the carbon layer is consumed through the capping layer using an oxidation process. Air replaces the sacrificial carbon layer during the consumption reaction. Next, a silicon nitride etch stop layer is provided over the surface of the capping layer and then an intermetal dielectric layer is provided. A via is formed by etching through the intermetal dielectric, stopping on the etch stop layer, and then etching through the etch stop layer and the capping layer in distinct processes. The via is filled with a metal plug and then second level wiring lines are formed.
Owner:UNITED MICROELECTRONICS CORP

Semiconductor device having metal gate and manufacturing method thereof

A semiconductor device includes a semiconductor substrate, a gate dielectric layer formed on the semiconductor substrate, and at least a first conductive-type metal gate formed on the gate dielectric layer. The first conductive-type metal gate includes a filling metal layer and a U-type metal layer formed between the filling metal layer and the gate dielectric layer. A topmost portion of the U-type metal layer is lower than the filling metal layer.
Owner:UNITED MICROELECTRONICS CORP

Process and apparatus for producing metallic glass

A process and an apparatus for producing metallic glass which are capable of producing a bulk amorphous alloy of desired shape, in particular, a bulk amorphous alloy of desired final shape are provided. In the present invention, the molten metal at a temperature above the melting point is selectively cooled at a rate higher than the critical cooling rate, and the product comprises single amorphous phase which is free from the crystalline phase formed by the development of crystal nuclei through nonuniform nucleation. The present invention is capable of producing the bulk amorphous alloy which is free from casting defects such as cold shuts and which has excellent strength properties in a simple process at a high reproducibility. Accordingly, a bulk metallic glass of desired shape is produced by filling a metal material in a hearth; melting the metal material by using a high-energy heat source which is capable of melting the metal material; pressing the molten metal at a temperature above the melting point of the metal material to deform the molten metal into the desired shape by at least one of compressive stress and shear stress at a temperature above the melting point, while avoiding the surfaces of the molten metal cooled to a temperature below the melting point of the metal material from meeting with each other during the pressing; and cooling the molten metal at a cooling rate higher than the critical cooling rate of the metal material simultaneously with or after the deformation to produce the bulk metallic glass of desired form.
Owner:MAKABE GIKEN

Carbon steel and stainless steel clad steel plate with toughness performance and production method

The invention discloses a carbon steel and stainless steel clad steel plate with toughness performance, and belongs to the technical field of production of metal clad plates. Carbon steel is a basal material, and satisfies the requirements of API5L "American Petroleum Pipeline Steel Specification"; 316L stainless steel is a multiple layer, and components satisfy the requirements of ASTM A240M-05 standard "Standard Specification of Chromium and Chromium Nickel Stainless Steel Plate, Sheet and Strip Steel for Pressure Vessels and General Purposes"; flux is BNi brazing filler metal; and solder resist is a mixture of magnesium oxide and aluminum oxide. The process comprises steel blank assembly, heating, rough rolling, finish rolling and heat treatment. The clad steel plate has excellent toughness performance and hydrogen induced cracking resistance, so that the use safety of crude oil conveying pipes is improved.
Owner:QINHUANGDAO SHOUQIN METAL MATERIAL

Thermal Conducting Materials for Solar Panel Components

This invention relates to solar panels with improved encapsulants and back sheets for greater power output and / or increased efficiency by using materials with higher thermal conductivity than conventional solar panels. According to certain embodiments the improved materials include fillers while maintaining sufficient dielectric properties. According to certain other embodiments, the invention includes a solar panel with the improved encapsulant between solar cells and the improved back sheet. The invention also includes a method of making a solar panel including the improved materials. The invention also includes solar modules and methods related to encapsulants and the back sheets including filler materials with an enhanced particle size distribution, a brightening agent, or an infrared extinguisher.
Owner:BP CORP NORTH AMERICA INC

GaN-based flip-chip light-emitting diode with double reflecting layers and preparation method thereof

InactiveCN101859861AImprove reflective effectAvoid the phenomenon of reduced reflectivitySemiconductor devicesReflective layerMetal electrodes
The invention discloses a GaN-based flip-chip light-emitting diode with double reflecting layers and a preparation method thereof, which adopts a dual-reflection structure with the combination of a distributed Bragg reflecting layer and a metal reflecting layer, fully plays the excellent reflectivity of the reflecting layers and greatly improves the luminous efficiency of the light-emitting diode; and an open structure is produced in the distributed Bragg reflecting layer for filling the metal reflecting layer, thereby forming the electric conduction function and avoiding the occurrence of phenomenon that the reflectivity of the metal reflecting layer is reduced due to mutual diffusion of the metal reflecting layer in the traditional flip-chip light-emitting diode and other metal electrodes.
Owner:XIAMEN SANAN OPTOELECTRONICS TECH CO LTD

Scribe line layout design

A scribe line layout design to reduce the damage caused by sawing the wafer is presented. An embodiment comprises metal plates located within the scribe lines and at least partially within the junctions of the scribe lines. Each of these metal plates has one or more slots to help relieve the pressure. Alternatively, instead of metal plates, grooves that may be filled with metal could be placed into the scribe lines. These metal plates could also be used concurrently with a seal ring for better protection during sawing.
Owner:TAIWAN SEMICON MFG CO LTD

Induction heated, hot wire welding

A hot wire welding process. An induction coil is used to preheat the filler metal wire prior to its entering the welding puddle / arc region. An induction coil is placed in close proximity to the welding arc. The filler wire is guided and supported by a delivery guide so that the filler wire passes through the center of, and is insulated from, the induction coil. The induction coil induces a current flow in the filler wire. The current produces heat as a result of the electrical resistivity of the filler wire. The heat produced raises the temperature of the filler wire just before it is fed into the weld arc region, thus reducing the energy required from the welding arc to melt the filler metal wire into the weld puddle.
Owner:BABCOCK & WILCOX TECHNICALSERVICES GRP INC

Electromagnetic current coupling field assisted hybrid melting-brazing method for laser-TIG arc and equipment

The invention discloses an electromagnetic current coupling field assisted hybrid melting-brazing method for a laser-TIG arc and equipment. In addition to the use of the welding zone, an alternating magnetic field is added to control properties of plasma formed through ionization of laser, arc and a raw material metal, thereby improving the laser utilization rate. Under the electric field assisted comprehensive effect, the weld melting depth is increased, and the assistant effect on the melting bath of the liquid-state brazing filler metal for laser-arc melting-brazing is realized through electromagnetic stirring and excitation and enhancement, thereby promoting the orderly flow of the liquid-state brazing filler metal and the rupture, wetting, spreading and proliferation of the liquid-state brazing filler metal on the surface of the high metal material, improving the full mixing of the liquid-state brazing filler metal and the base metal formed by melting the low-melting-point metal material, improving the uniformity of the components of the brazed weld, stabilizing the welding process, reducing welding defects, increasing the welding speed, improving the weld formation, optimizing the structure and performance of the brazed weld, and improving the quality of the brazed joint. Moreover, the equipment has the advantages of simple structure, flexible application, low cost, good effect and easy realization.
Owner:CHONGQING UNIV

Chip package with plank stack of semiconductor dies

In a chip package, semiconductor dies in a vertical stack of semiconductor dies or chips (which is referred to as a ‘plank stack’) are separated by a mechanical spacer (such as a filler material or an adhesive). Moreover, the chip package includes a substrate at a right angle to the plank stack, which is electrically coupled to the semiconductor dies along an edge of the plank stack. In particular, electrical pads proximate to a surface of the substrate (which are along a stacking direction of the plank stack) are electrically coupled to pads that are proximate to edges of the semiconductor dies by an intervening conductive material, such as: solder, stud bumps, plated traces, wire bonds, spring connectors, a conductive adhesive and / or an anisotropic conducting film. Note that the chip package may facilitate high-bandwidth communication of signals between the semiconductor dies and the substrate.
Owner:ORACLE INT CORP
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