Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for preparing three-dimensional porous nanometer silicon at low temperature through molten-salt growth method

A three-dimensional porous and nano-silicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve problems such as complex steps, pollution, and harsh conditions, and achieve the effect of uniform particles, high purity, and large specific surface area

Inactive Publication Date: 2016-02-24
HUAZHONG UNIV OF SCI & TECH
View PDF2 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current methods for preparing silicon nanomaterials are either harsh conditions, expensive, complicated steps, or the precursors are highly toxic and pollute

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing three-dimensional porous nanometer silicon at low temperature through molten-salt growth method
  • Method for preparing three-dimensional porous nanometer silicon at low temperature through molten-salt growth method
  • Method for preparing three-dimensional porous nanometer silicon at low temperature through molten-salt growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Put 1.2g of silicon dioxide granules obtained by rice husk processing into a sealed stainless steel high-temperature kettle after mixing evenly with 2g of magnesium powder;

[0025] (2) Put the mixture in (1) into a tube furnace filled with argon inert gas and heat it to 650°C at a heating rate of 5°C / min and keep it warm for 6h to obtain the product. After the product is cooled to room temperature with the furnace, take it out;

[0026] (3) 2g of the resulting product magnesium silicide and 7g of anhydrous zinc chloride (ZnCl 2 ) after mixing evenly, put it into a stainless steel high-temperature kettle again, put the mixture into a tube furnace filled with argon inert gas, and heat it to 300°C at a heating rate of 10°C / min and keep it for 10h. After the product is cooled to room temperature with the furnace, take it out ;

[0027] (4) Pickling the product obtained in (3) with 1 mol / L hydrochloric acid to remove magnesium oxide, magnesium chloride, and elemental m...

Embodiment 2

[0030] (1) 1.2g of silicon dioxide granules obtained by rice husk processing and 1.2g of magnesium powder are mixed evenly and put into a sealed stainless steel high-temperature kettle;

[0031] (2) Put the mixture in (1) into a tube furnace filled with argon inert gas and heat it to 400°C for 1 hour at a heating rate of 10°C / min to obtain the product, and take it out after the product is cooled to room temperature with the furnace;

[0032] (3) 1g of the resulting product magnesium silicide and 7g of anhydrous zinc chloride (ZnCl 2 ) after mixing evenly, put it into a stainless steel high-temperature kettle again, put the mixture into a tube furnace filled with argon inert gas, heat it to 100°C at a heating rate of 5°C / min and keep it for 2h, and take it out after the product is cooled to room temperature with the furnace ;

[0033] (4) Pickling the product obtained in (3) with 1 mol / L hydrochloric acid to remove magnesium oxide, magnesium chloride, and elemental metal Zn, w...

Embodiment 3

[0035] (1) Mix 1.2 g of silicon dioxide particles obtained by straw treatment with 2 g of magnesium powder and put them into a sealed stainless steel high-temperature kettle;

[0036] (2) Put the mixture in (1) into a tube furnace filled with argon inert gas and heat it to 500°C at a heating rate of 1°C / min for 3 hours to obtain the product, and take it out after the product is cooled to room temperature with the furnace;

[0037] (3) 1g of the resulting product magnesium silicide and 10g of anhydrous aluminum chloride (AlCl 3 ) after mixing evenly, put it into a stainless steel high-temperature kettle again, put the mixture into a tube furnace filled with argon inert gas and heat it to 200°C at a heating rate of 10°C / min and keep it warm for 12h. After the product is cooled to room temperature with the furnace, take it out ;

[0038] (4) Wash the product obtained in (3) with 1 mol / L hydrochloric acid to remove magnesium oxide, magnesium chloride, and elemental metal Al, then...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing three-dimensional porous nanometer silicon at low temperature through a molten-salt growth method. The method includes the following steps that silica particles obtained from different sources and magnesium powder are uniformly mixed and then are placed in a tube furnace to be fully reacted under an inert atmosphere, magnesium silicide is obtained, then the reaction product and anhydrous chloride metal salt are uniformly mixed and then are placed in a tube furnace filled with inert atmosphere to be fully reacted, reaction products are subjected to acid pickling, and the high-yield super-fine three-dimensional porous nanometer silicon is obtained. The method is simple and easy to implement, the raw materials are wide in source, most importantly, by adding the anhydrous chloride (MxCly), the nanometer silicon has the advantages of being small in pollution, high in yield and purity, large in specific area and uniform in particle and having mesopores, and the nanometer silicon can be applied to the fields of lithium ion battery cathode materials, semiconductor materials, medicine, high-quality alloy and the like.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial synthesis, and in particular relates to a method for preparing three-dimensional porous nano silicon at low temperature by a molten salt method. Background technique [0002] Silicon is the second most abundant element (approximately 26.4%) in the earth's crust. As a common semiconductor material, it has become an indispensable and important technical basis for modern high-tech society. The application of nano-silicon is very extensive. Firstly, in terms of optoelectronic applications, silicon nanoparticles have good compatibility with silicon integrated circuits, and have broad prospects in the application of electronic and optoelectronic devices; secondly, in terms of biology, silicon nanoparticles can have good Biocompatibility and stability can meet the needs of implantation in the body, and can be used in biosensors, cell imaging, etc.; finally, silicon nanomaterials have a high theoret...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/023
Inventor 霍开富王蕾高标安威力
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com